EP0111483A4 - Ajustage de composants piezoelectriques. - Google Patents
Ajustage de composants piezoelectriques.Info
- Publication number
- EP0111483A4 EP0111483A4 EP19820902310 EP82902310A EP0111483A4 EP 0111483 A4 EP0111483 A4 EP 0111483A4 EP 19820902310 EP19820902310 EP 19820902310 EP 82902310 A EP82902310 A EP 82902310A EP 0111483 A4 EP0111483 A4 EP 0111483A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- frequency
- housing
- optical energy
- trimming
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000009966 trimming Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 34
- 239000011521 glass Substances 0.000 claims abstract description 33
- 239000010453 quartz Substances 0.000 claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 230000003287 optical effect Effects 0.000 claims abstract description 18
- 239000013078 crystal Substances 0.000 claims abstract description 17
- 238000010897 surface acoustic wave method Methods 0.000 claims abstract description 9
- 239000004020 conductor Substances 0.000 claims abstract description 7
- 230000032683 aging Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 238000003860 storage Methods 0.000 claims description 3
- 230000001419 dependent effect Effects 0.000 claims description 2
- 238000012544 monitoring process Methods 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 abstract description 11
- 230000004044 response Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- PRPINYUDVPFIRX-UHFFFAOYSA-N 1-naphthaleneacetic acid Chemical compound C1=CC=C2C(CC(=O)O)=CC=CC2=C1 PRPINYUDVPFIRX-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- KKEBXNMGHUCPEZ-UHFFFAOYSA-N 4-phenyl-1-(2-sulfanylethyl)imidazolidin-2-one Chemical compound N1C(=O)N(CCS)CC1C1=CC=CC=C1 KKEBXNMGHUCPEZ-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000006578 abscission Effects 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical group [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
Definitions
- quartz filters are typically comprised of two or more resonators arranged in various configurations.
- composite frequency response can be trimmed by adjusting the resonant frequency of the component resonators irrespective of whether the resonator are arranged as discrete blanks, stacked arrays or multi-resonator structures deposited on a single wafer.
- Such effects are posited to to have their origin in the therminal or mechanical stresses induced by a moisture, changes in air pressure, and stray capacitance introduced by the encapsulation process. Because such phenomena are effectively inamen- able to amelioration once the component has been sealed, it is necessary that they be anticipated and, to the extent predictable, accomodated during the trimming pro ⁇ cedure. That is, the resonant frequency of the device is trimmed to a frequency offset by a predetermined amount from the desired frequency with the expectation that the final frequency, after encapulation, will be accurate.
- the laser is a pulsed Nd-YAG type cap ⁇ able of delivering a focused beam that will produce suf- ficient heat to evaporate metal from the electrodes of, for example, a quartz resonator.
- the laser beam is appropriately directed by an X-Y deflection system 5 equipped with the necessary optical devices including, by way of illustration, a pair of optical mirrors 6.
- the direction of the beam is controlled by a test system 7 that delivers control signals to the deflection system and to the laser power control 8.
- test system, power control and x-y deflection system operate to control the intensity and direction of the laserbeam so as to si ul- taneously scan the surface of the device to be trimmed and to modulate the trimming rate as the resonant fre ⁇ quency (or some other specified characteristic frequency) approaches its final value.
- the post-encapsulation trim- ming technique allows the encapsulated device to be stored for a period of time before the final trimming procedure is performed.
- This is decidedly an advantage because of the "aging" effect characteristics of such device. That is to say, a large portion of the total frequency shift of the device is found to occur within a relative short period after fabrication.
- the effects of this "short term" aging can be accordingly circumvented.
- the total long-term frequency drift i.e., the total drift after a period on the order of one year
- the total long-term frequency drift can be expeced to be reduced from approximate 10 ppm (parts per million) when trimmed before encapsulation to about 3 ppm when trimmed subsequent encapsulation.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US1982/000823 WO1984000082A1 (fr) | 1982-06-14 | 1982-06-14 | Ajustage de composants piezoelectriques |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0111483A1 EP0111483A1 (fr) | 1984-06-27 |
| EP0111483A4 true EP0111483A4 (fr) | 1985-12-19 |
Family
ID=22168045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP19820902310 Withdrawn EP0111483A4 (fr) | 1982-06-14 | 1982-06-14 | Ajustage de composants piezoelectriques. |
Country Status (2)
| Country | Link |
|---|---|
| EP (1) | EP0111483A4 (fr) |
| WO (1) | WO1984000082A1 (fr) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2199985B (en) * | 1986-12-22 | 1991-09-11 | Raytheon Co | Surface acoustic wave device |
| US5138214A (en) * | 1989-12-27 | 1992-08-11 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric transducer and method of adjusting oscillation frequency thereof |
| DE19649332C1 (de) * | 1996-11-28 | 1998-01-22 | Tele Quarz Gmbh | Resonator mit Kristall |
| JP3998948B2 (ja) * | 2001-10-31 | 2007-10-31 | セイコーインスツル株式会社 | 圧電振動子及びその製造方法 |
| US7994877B1 (en) | 2008-11-10 | 2011-08-09 | Hrl Laboratories, Llc | MEMS-based quartz hybrid filters and a method of making the same |
| US7830074B2 (en) * | 2006-08-08 | 2010-11-09 | Hrl Laboratories, Llc | Integrated quartz oscillator on an active electronic substrate |
| US8766745B1 (en) | 2007-07-25 | 2014-07-01 | Hrl Laboratories, Llc | Quartz-based disk resonator gyro with ultra-thin conductive outer electrodes and method of making same |
| FR2857785B1 (fr) * | 2003-07-17 | 2005-10-21 | Commissariat Energie Atomique | Resonateur acoustique de volume a frequence de resonance ajustee et procede de realisation |
| US7569977B2 (en) * | 2006-08-02 | 2009-08-04 | Cts Corporation | Laser capacitance trimmed piezoelectric element and method of making the same |
| US10266398B1 (en) | 2007-07-25 | 2019-04-23 | Hrl Laboratories, Llc | ALD metal coatings for high Q MEMS structures |
| EP2176313B1 (fr) * | 2007-08-09 | 2018-02-28 | Akzo Nobel Coatings International B.V. | Composition de revêtement époxy à haute teneur en solide |
| US7802356B1 (en) | 2008-02-21 | 2010-09-28 | Hrl Laboratories, Llc | Method of fabricating an ultra thin quartz resonator component |
| US8912711B1 (en) | 2010-06-22 | 2014-12-16 | Hrl Laboratories, Llc | Thermal stress resistant resonator, and a method for fabricating same |
| US9599470B1 (en) | 2013-09-11 | 2017-03-21 | Hrl Laboratories, Llc | Dielectric high Q MEMS shell gyroscope structure |
| US9977097B1 (en) | 2014-02-21 | 2018-05-22 | Hrl Laboratories, Llc | Micro-scale piezoelectric resonating magnetometer |
| US9991863B1 (en) | 2014-04-08 | 2018-06-05 | Hrl Laboratories, Llc | Rounded and curved integrated tethers for quartz resonators |
| US10308505B1 (en) | 2014-08-11 | 2019-06-04 | Hrl Laboratories, Llc | Method and apparatus for the monolithic encapsulation of a micro-scale inertial navigation sensor suite |
| US10031191B1 (en) | 2015-01-16 | 2018-07-24 | Hrl Laboratories, Llc | Piezoelectric magnetometer capable of sensing a magnetic field in multiple vectors |
| US10175307B1 (en) | 2016-01-15 | 2019-01-08 | Hrl Laboratories, Llc | FM demodulation system for quartz MEMS magnetometer |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3969640A (en) * | 1972-03-22 | 1976-07-13 | Statek Corporation | Microresonator packaging and tuning |
| GB2040074A (en) * | 1978-12-27 | 1980-08-20 | Halle Feinmech Werke Veb | Laser beam machining |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3827142A (en) * | 1972-12-11 | 1974-08-06 | Gti Corp | Tuning of encapsulated precision resistor |
| US3913195A (en) * | 1974-05-28 | 1975-10-21 | William D Beaver | Method of making piezoelectric devices |
| JPS6051283B2 (ja) * | 1975-09-10 | 1985-11-13 | 株式会社精工舎 | Ｇｔカツト水晶振動子の周波数温度特性調整法 |
| US4021898A (en) * | 1976-05-20 | 1977-05-10 | Timex Corporation | Method of adjusting the frequency of vibration of piezoelectric resonators |
| US4131484A (en) * | 1978-02-13 | 1978-12-26 | Western Electric Company, Inc. | Frequency adjusting a piezoelectric device by lasering |
| US4217570A (en) * | 1978-05-30 | 1980-08-12 | Tektronix, Inc. | Thin-film microcircuits adapted for laser trimming |
| US4179310A (en) * | 1978-07-03 | 1979-12-18 | National Semiconductor Corporation | Laser trim protection process |
| JP3130373B2 (ja) * | 1992-06-09 | 2001-01-31 | 川研ファインケミカル株式会社 | 洗浄剤組成物 |
-
1982
- 1982-06-14 EP EP19820902310 patent/EP0111483A4/fr not_active Withdrawn
- 1982-06-14 WO PCT/US1982/000823 patent/WO1984000082A1/fr not_active Application Discontinuation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3969640A (en) * | 1972-03-22 | 1976-07-13 | Statek Corporation | Microresonator packaging and tuning |
| GB2040074A (en) * | 1978-12-27 | 1980-08-20 | Halle Feinmech Werke Veb | Laser beam machining |
Non-Patent Citations (3)
| Title |
|---|
| INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, vol. 17, no. 5 II, 9th October 1974, pages 1397-1398, New York, US; A.G. SMAGIN: "Frequency correction to 10-8 by ruby laser for precision quartz crystals" * |
| LASER FOCUS, March 1970, pages 38-47, Newton, US; J.F. READY: "Selecting a laser for material working" * |
| See also references of WO8400082A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0111483A1 (fr) | 1984-06-27 |
| WO1984000082A1 (fr) | 1984-01-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
| AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE CH DE FR GB LI LU NL SE |
|
| 17P | Request for examination filed |
Effective date: 19840620 |
|
| 17Q | First examination report despatched |
Effective date: 19870529 |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
| 18D | Application deemed to be withdrawn |
Effective date: 19880111 |
|
| PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 19830729 Year of fee payment: 2 |
|
| RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: VANNOPPEN, JEAN Inventor name: CLAES, ROGER |