EP0075709B1 - Spektrometer zum Nachweis der von einer Elektronensonde auf einer Probe ausgelösten Sekundärelektronen - Google Patents

Spektrometer zum Nachweis der von einer Elektronensonde auf einer Probe ausgelösten Sekundärelektronen Download PDF

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Publication number
EP0075709B1
EP0075709B1 EP82107490A EP82107490A EP0075709B1 EP 0075709 B1 EP0075709 B1 EP 0075709B1 EP 82107490 A EP82107490 A EP 82107490A EP 82107490 A EP82107490 A EP 82107490A EP 0075709 B1 EP0075709 B1 EP 0075709B1
Authority
EP
European Patent Office
Prior art keywords
secondary electrons
spectrometer
electrode
target
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP82107490A
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German (de)
English (en)
French (fr)
Other versions
EP0075709A3 (en
EP0075709A2 (de
Inventor
Hans-Peter Dipl.-Phys. Feuerbaum
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0075709A2 publication Critical patent/EP0075709A2/de
Publication of EP0075709A3 publication Critical patent/EP0075709A3/de
Application granted granted Critical
Publication of EP0075709B1 publication Critical patent/EP0075709B1/de
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/08—Electron sources, e.g. for generating photo-electrons, secondary electrons or Auger electrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/44—Energy spectrometers, e.g. alpha-, beta-spectrometers

Definitions

  • the invention relates to a spectrometer for detecting the secondary electrons triggered by an electron probe on a sample according to the preamble of claim 1.
  • the potential measurement on a sample with an electron probe requires a spectrometer, which is used to measure the secondary electron energy.
  • the spectrometer arrangement previously used is described in the literature (H.P. Feuerbaum, "VLSI Testing Using The Electron Probe", SEM / 1979, SEM Inc.AMF O'HARE IL 60666, 285-296).
  • the secondary electrons released on the sample pass through a suction field and are then braked in a homogeneous opposing field.
  • This known counterfield spectrometer delivers an integral energy distribution.
  • the angular distribution of the secondary electrons is not taken into account.
  • this angular distribution can be changed by electrostatic micro-fields on the sample surface, i.e. If the potential at the measuring point changes, so does the local microfield on the sample surface and thus also the angular distribution of the secondary electrons. Since the secondary electron spectrometer does not see the change in the angular distribution of the secondary electrons, measurement errors of approximately 5-10% occur in the known arrangement.
  • the present invention is based on the object of specifying a secondary electron spectrometer of the type mentioned at the outset which is improved in terms of measuring accuracy.
  • the measurement sensitivity is also improved with a secondary electron spectrometer arrangement according to the invention.
  • the figure shows a secondary electron spectrometer arrangement according to the invention.
  • the secondary electron spectrometer shown in the figure was designed in order to significantly increase the detection probability for the secondary electrons emitted at larger angles relative to the primary beam axis compared to arrangements with planar counterfield electrodes.
  • the improvement according to the invention can therefore advantageously be carried out on a secondary electron spectrometer of an electron beam measuring device, as described in the publication by H.P. Feuerbaum is known.
  • the secondary electrons are extracted from the sample by a suction field AI of high field strength. This suction field A1 is located between the grid G1 and the sample PR.
  • the measuring points on the sample PR are usually in the non-activated state at the potential 0, while, as is also known from the cited literature reference, the grid G1 is at a high potential, e.g. B. 600 V. After passing through the suction field A1, the secondary electrons pass through a braking opposing field BF between the two grids G1 and G2. As is also known from the cited literature reference, the grid G2 is again at approximately the same potential as the measuring points on the sample PR in the non-activated state.
  • the braking opposing field BF between the grids G1 and G2 is such that it only cancels the previous acceleration of the suction field A1. All secondary electrons SE can thus pass through the grid G2 and then have an angular distribution which is identical to the angular distribution of the secondary electrons SE on the sample surface.
  • the energy distribution of the secondary electrons SE is then measured using the hemispherical grid G3, which is at a potential of approximately -7 V in the exemplary embodiment shown in the figure.
  • the secondary electrons SE in the suction field A2 are then accelerated to the detector via a further grid arrangement G4.
  • the grid arrangement G4 is operated at approximately the same voltage as in the secondary electron spectrometer described in the cited reference.
  • the secondary electron spectrometer is also provided with an AB shield.
  • the primary electron beam PE impinges on the sample PR and generates secondary electrons SE with a certain angular distribution that depends on the potential at the measuring point on the sample surface.
  • the invention is particularly suitable for the quantitative potential measurement on integrated circuits with an electron probe.
  • the invention it is essential for the invention to project the angular distribution of the secondary electrons SE present on the sample surface, which depends on the potential of the measuring point on the sample surface, onto the plane of the grid G2, the secondary electrons SE essentially have the same three-dimensional pulse distribution as at the measuring point on the sample surface at the time of generation of the secondary electrons SE by the primary electron beam PE. It is also essential for the invention that the secondary electrons SE accelerate with this three-dimensional pulse distribution after passing through the grid G2 be that a change in the angular distribution due to a change in potential at the measuring point on the sample surface does not falsify the measurement of the energy distribution of the secondary electrons SE in the detector.
  • the secondary electrons SE are braked.
  • the voltage of approximately -7 V applied to the grid G3 is selected such that secondary electrons SE, which are triggered at measuring points (conductor tracks) to which a voltage of approximately 8 V is applied, are just triggered into the suction field A2 of the grid arrangement G4 and finally can get to the detector.
  • the invention is of course not limited to the embodiment shown in the figure.
  • the effects of the grids G1, G2, G3 can also be achieved by only two grids shaped in a certain way, the first grille being designed as a suction grille and the second grille as a brake grille.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Tubes For Measurement (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)
EP82107490A 1981-09-30 1982-08-17 Spektrometer zum Nachweis der von einer Elektronensonde auf einer Probe ausgelösten Sekundärelektronen Expired EP0075709B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3138929 1981-09-30
DE19813138929 DE3138929A1 (de) 1981-09-30 1981-09-30 Verbessertes sekundaerelektronen-spektrometer fuer die potentialmessung an einer probe mit einer elektronensonde

Publications (3)

Publication Number Publication Date
EP0075709A2 EP0075709A2 (de) 1983-04-06
EP0075709A3 EP0075709A3 (en) 1983-06-29
EP0075709B1 true EP0075709B1 (de) 1987-04-08

Family

ID=6143065

Family Applications (1)

Application Number Title Priority Date Filing Date
EP82107490A Expired EP0075709B1 (de) 1981-09-30 1982-08-17 Spektrometer zum Nachweis der von einer Elektronensonde auf einer Probe ausgelösten Sekundärelektronen

Country Status (4)

Country Link
US (1) US4514682A (enrdf_load_stackoverflow)
EP (1) EP0075709B1 (enrdf_load_stackoverflow)
JP (1) JPS5871542A (enrdf_load_stackoverflow)
DE (2) DE3138929A1 (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59211953A (ja) * 1983-05-17 1984-11-30 Univ Osaka ２次電子分光装置
GB8327737D0 (en) * 1983-10-17 1983-11-16 Texas Instruments Ltd Electron detector
DE3638682A1 (de) * 1986-11-13 1988-05-19 Siemens Ag Spektrometerobjektiv fuer korpuskularstrahlmesstechnik
JPS63126148A (ja) * 1986-11-14 1988-05-30 Hiroshi Daimon 荷電粒子アナライザ−
JP2696216B2 (ja) * 1988-01-11 1998-01-14 セイコーインスツルメンツ株式会社 イオンビーム加工装置
JPH03101041A (ja) * 1989-09-14 1991-04-25 Hitachi Ltd 電子ビームによる電圧測定装置
US6359451B1 (en) 2000-02-11 2002-03-19 Image Graphics Incorporated System for contactless testing of printed circuit boards
AU3354401A (en) 2000-02-14 2001-08-20 Eco 3 Max Inc. Process for removing volatile organic compounds from an air stream and apparatustherefor
RU2171467C1 (ru) * 2000-06-30 2001-07-27 Санкт-Петербургский государственный электротехнический университет Микрореактор для химического и генетического тестирования
WO2016047538A1 (ja) * 2014-09-24 2016-03-31 国立研究開発法人物質・材料研究機構 エネルギー弁別電子検出器及びそれを用いた走査電子顕微鏡
US10319578B2 (en) * 2016-01-21 2019-06-11 Japan Synchrotron Radiation Research Institute Retarding potential type energy analyzer

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2946002A (en) * 1958-02-17 1960-07-19 Kingston Electronic Corp Signal-pickup test probe
US3445708A (en) * 1967-02-06 1969-05-20 Gen Electric Electron diffraction unit
US3531716A (en) * 1967-06-16 1970-09-29 Agency Ind Science Techn Method of testing an electronic device by use of an electron beam
US3448377A (en) * 1967-10-12 1969-06-03 Atomic Energy Commission Method utilizing an electron beam for nondestructively measuring the dielectric properties of a sample
US3549999A (en) * 1968-06-05 1970-12-22 Gen Electric Method and apparatus for testing circuits by measuring secondary emission electrons generated by electron beam bombardment of the pulsed circuit
DE1946931A1 (de) * 1969-09-17 1971-03-18 Gen Electric Verfahren zum Pruefen von Schaltungen und Vorrichtung zur Ausfuehrung des Verfahrens
JPS4823385A (enrdf_load_stackoverflow) * 1971-07-28 1973-03-26
DE2151167C3 (de) * 1971-10-14 1974-05-09 Siemens Ag, 1000 Berlin Und 8000 Muenchen Elektronenstrahl-Mikroanalysator mit Auger-Elektronen-Nachweis
US3796947A (en) * 1973-02-27 1974-03-12 Bell Telephone Labor Inc Electron beam testing of film integrated circuits
US4169244A (en) * 1978-02-03 1979-09-25 Plows Graham S Electron probe testing, analysis and fault diagnosis in electronic circuits
DE2814049A1 (de) * 1978-03-31 1979-10-18 Siemens Ag Verfahren zur beruehrungslosen messung des potentialverlaufs in einem elektronischen bauelement und anordnung zur durchfuehrung des verfahrens
DE2823642A1 (de) * 1978-05-30 1980-01-03 Siemens Ag Verfahren zur beruehrungslosen potentialmessung an einem elektronischen bauelement
US4179604A (en) * 1978-09-29 1979-12-18 The United States Of America As Represented By The Secretary Of The Navy Electron collector for forming low-loss electron images
JPS55156867A (en) * 1979-05-28 1980-12-06 Hitachi Ltd Potential measuring device
US4417203A (en) * 1981-05-26 1983-11-22 International Business Machines Corporation System for contactless electrical property testing of multi-layer ceramics

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Scanning Electron Microscopy", 1971/1, p.285-296 (SEM/nc, AMF O'Hare, USA) *

Also Published As

Publication number Publication date
DE3276035D1 (en) 1987-05-14
US4514682A (en) 1985-04-30
EP0075709A3 (en) 1983-06-29
JPS5871542A (ja) 1983-04-28
EP0075709A2 (de) 1983-04-06
DE3138929A1 (de) 1983-04-14
JPS6352428B2 (enrdf_load_stackoverflow) 1988-10-19

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