EP0070809A3 - Adjustment to desired value (trimming) on thin film resistors by ion sputtering - Google Patents

Adjustment to desired value (trimming) on thin film resistors by ion sputtering Download PDF

Info

Publication number
EP0070809A3
EP0070809A3 EP82830171A EP82830171A EP0070809A3 EP 0070809 A3 EP0070809 A3 EP 0070809A3 EP 82830171 A EP82830171 A EP 82830171A EP 82830171 A EP82830171 A EP 82830171A EP 0070809 A3 EP0070809 A3 EP 0070809A3
Authority
EP
European Patent Office
Prior art keywords
thin film
desired value
trimming
adjustment
film resistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP82830171A
Other languages
German (de)
French (fr)
Other versions
EP0070809A2 (en
Inventor
Carlo Misiano
Enrico Simonetti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leonardo SpA
Original Assignee
Selenia Industrie Elettroniche Associate SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Selenia Industrie Elettroniche Associate SpA filed Critical Selenia Industrie Elettroniche Associate SpA
Publication of EP0070809A2 publication Critical patent/EP0070809A2/en
Publication of EP0070809A3 publication Critical patent/EP0070809A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H01C17/24Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
    • H01C17/2404Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by charged particle impact, e.g. by electron or ion beam milling, sputtering, plasma etching

Abstract

A technique for adjusting to the desired value, thin film integrated resistors is made known. This method consists in exposing a resistor, whose thickness is greater than that neces­ sary for the desired resistance, to ionic sputtering of the resistive material until a the resistor thickness is such as to correspond to the desired electric resistance.
Ion-sputter etching is realised iether by means of a plasma or by means of an ion-gun.
EP82830171A 1981-07-20 1982-06-15 Adjustment to desired value (trimming) on thin film resistors by ion sputtering Withdrawn EP0070809A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT4893281 1981-07-20
IT48932/81A IT1171401B (en) 1981-07-20 1981-07-20 TRIMMING VALUE ADJUSTMENT THIN FILM RESISTORS BY IONIC EROSION

Publications (2)

Publication Number Publication Date
EP0070809A2 EP0070809A2 (en) 1983-01-26
EP0070809A3 true EP0070809A3 (en) 1983-07-13

Family

ID=11269073

Family Applications (1)

Application Number Title Priority Date Filing Date
EP82830171A Withdrawn EP0070809A3 (en) 1981-07-20 1982-06-15 Adjustment to desired value (trimming) on thin film resistors by ion sputtering

Country Status (2)

Country Link
EP (1) EP0070809A3 (en)
IT (1) IT1171401B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2213986A (en) * 1987-12-16 1989-08-23 Philips Electronic Associated Fabrication of resistors in microwave and other circuits
US6475400B2 (en) * 2001-02-26 2002-11-05 Trw Inc. Method for controlling the sheet resistance of thin film resistors
DE10162540A1 (en) * 2001-12-19 2003-07-10 Infineon Technologies Ag Component and method for its production
US10680056B1 (en) 2018-12-26 2020-06-09 Texas Instruments Incorporated IC with ion milled thin-film resistors

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2111511A5 (en) * 1970-10-19 1972-06-02 Western Electric Co
DE2144656A1 (en) * 1971-09-07 1973-03-15 Hottinger Messtechnik Baldwin PROCEDURE AND ARRANGEMENT FOR CHANGING THE ELECTRICAL RESISTANCE
FR2253280A1 (en) * 1973-12-03 1975-06-27 Hewlett Packard Co
FR2354617A1 (en) * 1976-06-08 1978-01-06 Electro Resistance PROCESS FOR THE MANUFACTURE OF ELECTRICAL RESISTORS FROM METAL SHEETS OR FILMS AND RESISTANCES OBTAINED

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2111511A5 (en) * 1970-10-19 1972-06-02 Western Electric Co
DE2144656A1 (en) * 1971-09-07 1973-03-15 Hottinger Messtechnik Baldwin PROCEDURE AND ARRANGEMENT FOR CHANGING THE ELECTRICAL RESISTANCE
FR2253280A1 (en) * 1973-12-03 1975-06-27 Hewlett Packard Co
FR2354617A1 (en) * 1976-06-08 1978-01-06 Electro Resistance PROCESS FOR THE MANUFACTURE OF ELECTRICAL RESISTORS FROM METAL SHEETS OR FILMS AND RESISTANCES OBTAINED

Also Published As

Publication number Publication date
EP0070809A2 (en) 1983-01-26
IT1171401B (en) 1987-06-10
IT8148932A0 (en) 1981-07-20

Similar Documents

Publication Publication Date Title
EP0239386A3 (en) Load cell and temperature correction of the same
GB1177285A (en) Thin-Film Impedance Arrangement
DE3279481D1 (en) Machine for applying a portion of photosensitive film to at least one face of a flat plate having a surface area greater than said portion
GB1514527A (en) High resistance cermet film and method of making the same
AU536712B2 (en) Method for flow coating with suck back control
EP0070809A3 (en) Adjustment to desired value (trimming) on thin film resistors by ion sputtering
ES8505492A1 (en) Method of adjusting the valence of resistances.
EP0366566A3 (en) Reference electrode, ion sensor and method of manufacturing the same
EP0154399A3 (en) Film resistor trimming
US5266529A (en) Focused ion beam for thin film resistor trim on aluminum nitride substrates
GB1284109A (en) Method of making thin film circuits
EP0175654A3 (en) Procedure for the manufacturing of double layer resistive thin film integrated resistors through ion erosion
US3621441A (en) Film resistor adjustable by isolating portions of the film
JPS5619613A (en) Manufacture of inductance element
JPH0268902A (en) Resistance value trimming
JPS5398096A (en) Production of thin film metal resistor
JPS62174902A (en) Trimming of thick film resistance element
JPS586282B2 (en) Kouseido Teikou
JPS5728350A (en) Manufacture of hybrid integrated circuit
JPS57121201A (en) Method of trimming metal thin film resistor
JPH033368A (en) Function trimming method for semiconductor pressure sensor element
JPH0548922B2 (en)
JPS5567139A (en) Preparation of photomask
JPS6122445B2 (en)
JPS5688303A (en) Method of controlling resistance value of film fixed resistor

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Designated state(s): DE FR GB NL SE

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Designated state(s): DE FR GB NL SE

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 19840621

RIN1 Information on inventor provided before grant (corrected)

Inventor name: MISIANO, CARLO

Inventor name: SIMONETTI, ENRICO