EP0068111A2 - Verfahren zur Herstellung einer Kathodenstruktur - Google Patents

Verfahren zur Herstellung einer Kathodenstruktur Download PDF

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Publication number
EP0068111A2
EP0068111A2 EP82103884A EP82103884A EP0068111A2 EP 0068111 A2 EP0068111 A2 EP 0068111A2 EP 82103884 A EP82103884 A EP 82103884A EP 82103884 A EP82103884 A EP 82103884A EP 0068111 A2 EP0068111 A2 EP 0068111A2
Authority
EP
European Patent Office
Prior art keywords
layer
cathode
electron emissive
metallization
photoresist
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP82103884A
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English (en)
French (fr)
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EP0068111A3 (en
EP0068111B1 (de
Inventor
Bruce Paul Piggin
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International Business Machines Corp
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International Business Machines Corp
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Publication date
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Publication of EP0068111A3 publication Critical patent/EP0068111A3/en
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Publication of EP0068111B1 publication Critical patent/EP0068111B1/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/04—Manufacture of electrodes or electrode systems of thermionic cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/13—Solid thermionic cathodes

Definitions

  • This invention relates to cathode structures and methods of making them.
  • Cathodes have been prepared for many years using the alkaline earth oxides of appropriate crystal structures to give electron emission when heated to 700 - 1100°C.
  • the oxides are very sensitive to cathode poisoning which is believed to close off the fine porous structure that aids electron emission.
  • the industry uses controlled composition mixed CaSrBa carbonates, (known as triple carbonate).
  • the carbonate breaks down during the initial heating of the cathode in vacuum during the evacuation and seal-off of the cathode ray tube (CRT) or the vacuum tube.
  • the formation of the oxide (sometimes termed thermal activation) from the carbonate is performed while the excess C 02 is being pumped away.
  • the oxides are sensitive to water vapour which damages the triple oxide crystal structures.
  • the industry prefers carbonate deposition plus later decomposition to the oxides.
  • the carbonates for both electron tubes and cathode ray tubes are sprayed or dipcoated onto the cathode structure, and an organic binder is used to make the carbonate particles stick to the cathode metal substrate.
  • organic binder is often based on polymethacrylate or nitrocellulose and are chosen because they leave the carbonate crystal morphology intact after they are "burned-off", during the initial heating of the thermal activation step.
  • Carbonate particles are loaded into the photoresist (up to 75% solids content) and milled in a ball mill to produce a slurry of appropriate viscosity to be spin coated on a cathode.
  • 70% CaSrBa carbonate crystals are incorporated into Kodak photoresist and exposed to conventional photo sources. To avoid poor resolution, the mixtures are heavily ball milled. The typical image sizes of fractions of a mil are not adequate for practice of this invention.
  • the Stanford Research Institute loaded photoresist method has several difficulties which restrict the application of the technology to finer limits. Practice of this method has the following attendant problems:
  • microminiature planar cathode-grid structures for vacuum tubes in which the principles of this invention can be beneficially applied.
  • Illustrative of such structures are those disclosed in US No.4,138,622 and EP-0039877.
  • the devices referred to require triple carbonate patterns precisely and clearly delineated because the grid is virtually in the same plane and on the same substrate surface as the cathode. If there is any spurious imprecise pattern of carbonate deposition, there is a risk of anomalous uncontrolled grid emission because the grid is at the same temperature 700 - 1100°C as the cathode metal.
  • the ultimate technological limit of microminiaturization to which these devices can be pushed depends on the critical patterning resolution of the carbonate particles.
  • a cathode structure comprising electron emissive material on a pattern of metallization on an insulating substrate is characterised by encapsulation material surrounding the electron emissive material.
  • a method of forming a cathode structure comprises the steps of establishing a first positive photoresist layer on a metallization layer on a substrate forming a delineated aperture in the positive photoresist layer to expose an area of the metallization layer, depositing electron emissive material in the apertures, establishing a second layer of positive photoresist over the electron emissive material and the first layer of photoresist, and removing part of both layers of photoresist to form a region of the two photoresist layers which encapsulates the electron emissive material.
  • Another method according to this invention comprises the steps of establishing a body of electron emissive material on an essentially planar surface of a metallization layer on an insulating substrate characterised in that the body comprises an array of elongated electron p missive needle-like particles essentially normal thereto.
  • a cathode structure according to this invention may comprise an electron emissive layer on a metallization layer having an essentially planar surface on an insulating substrate characterised in that the layer comprises essentially normal to the metallization surface.
  • electrophoresis is used for depositing large needle crystals of triple carbonate to produce good orientation and good crystal packing in an electron emissive layer. It is an open structure with the coherent mass being through the emissive layer and provides beneficial emission densities.
  • the method of an embodiment of this invention uses a positive resist to produce an apertured mask in the areas that require carbonate coating. Large crystal carbonate is electrophoretically coated into the resist apertures and dried. A second thick layer of positive resist is spun over the first layer of resist and the filled aperture. This thick layer is exposed using a larger mask to leave a carbonate pattern fully encapsulated by the first and second resist coats.
  • an ordinary positive photoresist is patterned, as in the manner of silicon technology, and used as an electrical stop off to restrict the area where cataphoresis occurs.
  • the requirements of this resist are that it should be a good electrical insulator and be proof against pinholes. It is important there not be a conducting metal layer right up to the edge of the wafer because this is a high field stress point where the resist is thin and spurious cataphoretic deposition occurs out on the edges.
  • a cataphoretic deposition solution is prepared.
  • this may be done by ball milling carbonate particles, e.g. triple carbonate particles with a needle structure, in an ethyl alcohol liquid for sufficient time that a surfacetcharge appears on the broken crystals.
  • This surface charge is used to make the particles move under the influence of the applied electric field obtained by voltage applied to the workpiece.
  • the deposit fills the apertures in the resist, and of necessity the photoresist is an appropriate electrical insulator.
  • a beneficial resolution is obtained because the particles are standing on end and the cross-section which occupies an area of the surface is of much smaller section than the longitudinal section. Therefore, the resolution will be mugh higher for equivalent size particles.
  • a multiple electron beam cathode ray tube for which a cathode structure according to the invention is particularly suitable has a plurality of cathodes in a plane positioned on one side of a substrate to form an array.
  • An advantageous embodiment thereof is disclosed in EP-0039877.
  • Grids in the same plane, i.e. on the surface of the same substrate, are positioned in spaced relation about the cathodes.
  • a heater is associated with the substrate for heating the cathodes.
  • the resultant unitary structure is mechanically stable and operative with small grid-to-cathode voltages, for example, less than 35 volts, and negligible grid currents so that a plurality of individually controlled electron beams are formed when appropriate potentials are applied to the cathodes and grids.
  • the structure can be batch-fabricated with photolithography to define accurately the distance between the cathode and the grid as well as the size of the cathode.
  • the electron emissive layers of the cathodes of a multibeam CRT may be obtained in accordance with this invention.
  • a metallization layer 10 is deposited on and supported by a substrate 14 at interface 15 and has an outer surface 12.
  • a very thin layer 16 of pure negative photoresist is established in step 2 (Fig.l.2) on surface 12 of layer 10 and has an outer surface 18.
  • step 3 a layer 20 of triple carbonate loaded negative photoresist is established on surface 18 of layer 16 and has an outer surface 22.
  • Resist layer 20 is exposed to a selected pattern via a light mask (not shown) in step 4 (Fig.l.4) leaving a developed pattern 24 in the combined residue of thin layer 16 and triple carbonate loaded photoresist 22 comprising resist 24.1 and carbonate particles 24.2.
  • step 5 the resist 24.1 is "burnt off” by heating prior to or concurrent with the carbonate breakdown that gives the required CaSrBa oxide pattern 30 on substrate 10. If the heating is slow, the resist tends to melt and spread, spoiling the definition of the pattern. If the heating is fast, the resist vaporises and gives rise to poor adherence of the oxide pattern.
  • a cathode substrate 7 supports, at interface 9, a metallization layer 11 with upper surface 13.
  • a sapphire wafer is evaporated with metallization tungsten 400nm and titanium 100nm.
  • a positive photoresist layer is deposited on the surface 13, and, in step 2, (Fig.2.2) through positive photoresist technology by exposing and developing photoresist, aperture 40 is established in layer 42 leaving resist segment 42.1 on the left and resist segment 42.2 on the right.
  • Aperture 40 defines a segment 41 of the metallization layer 11.
  • the photoresist is insulating and novalac resins are suitable.
  • step 3 a pattern 44 of electron emissive material CaSrBa carbonate is cataphoretically deposited in aperture 44.
  • the material is comprised of elongated particles in the form of needle-like structures.
  • a substantial proportion of the carbonate needles 44.1 is aligned essentially perpendicular to metallization segment 41.
  • barium formate solution 44.2 is added and the solvent driven off to improve adhesion of the needles to the metallization layer.
  • a thick capping layer 46 of positive resist is established in step 4 (Fig.2.4) over carbonate pattern 44 and also over the adjacent photoresist segments 42.1 and 42.2.
  • step 5 both positive photoresist layers 46 and 42 are exposed and developed through use of a larger aperture light mask than for step 2, leaving a pedestal 48 comprising side encapsulation 48.1 originally part of segment 42.1, side encapsulation 48.2 originally part of segment 42.2, photoresist 48.3 originally part of layer 46 and carbonate pattern 44.
  • step 6 Fig.2.6
  • the photoresist of pedestal 48 is "burnt off" during carbonate decomposition leaving the required CaSrBa oriented oxide pattern 50.
  • the substrate 7 with the pedestal-encapsulated carbonate pattern may be inserted into a vacuum tube as a cathode.
  • a cathode made in accordance with the invention may be used advantageously in a multiple electron beam cathode ray tube 60 (Fig.3).
  • the tube 60 has an envelope 62.
  • fluorescent screen 64 means 66 for accelerating, focussing and deflecting electron beams, and a unitary structure 68 (Fig.4) which is situated in the neck portion of envelope 62.
  • the unitary structure 68 is connected to a source 70 of electrical input signals by a plurality of wires in bundles 72 and 74.
  • the unitary structure 68 (Fig.4) has a substrate 76 of a high temperature insulator, such as sapphire, with good thermal conductivity. On the back surface of the substrate 76 is a thin film heater 78 made from a resistive, refractory metal, such as tungsten or molybdenum. Positioned on the front surface of the substrate 76 is an array of cathodes 80A, 80B and 80C, that are surrounded by modulating grids 82A, 82B and 82C, that are surrounded by modulating grids 82A, 82B and 82C, respectively. The arrays of cathodes 80A to 80C and grids 82A to 82C are on the same surface which is in a single plane.
  • the cathodes and the grids need to be on the same surface but it is not essential that the surface be planar.
  • the cathodes could be recessed with respect to the grids.
  • a wire 73 from the bundle 72 goes from the source 70 to one end of the heater 78 and a wire 75 from the bundle 74 goes from the other end of the heater 78 to the source 70.
  • the unitary structure 68 can be batch-fabricated with photolithographic process steps.
  • the cathodes 80A to 80C are deposited on the front surface of substrate 78 as a thin film of molybdenum, tungsten, platinum or other suitable refractory material and then defined by conventional photolithographic techniques.
  • the cathode areas are then made electron-emitting by delineating a mixture of photoresist and carbonates of strontium, barium and calcium in those regions in accordance with this invention.
  • the photoresist volatilizes at about 500°C leaving the cathodes electron emitting and capable of being activated in the usual manner by applying the appropriate voltage.
  • This batch-fabrication method is capable of very fine dimensional control providing the capability of making cathode and grid lines as small as 10 microns in width.
  • the thin film heater 78 heats the substrate 76 to a temperature of the order of 700°C so that sufficient electron emission takes place.
  • the cathodes are then individually biased with respect to the grids to either cut off or turn on.
  • adjacent grid electrodes for example, 82B and 82C, may be replaced by a single grid electrode.
  • FIGS. 5, 6, 7 and 8 illustrate a method of obtaining several cathodes commonly connected electrically during the cataphoresis of the triple carbonate.
  • the conventional integrated circuit wafer chip approaches of silicon are utilized.
  • the electrical circuits which comprise the cathodes must be electrically isolated from the grids for device operation.
  • all the cathodes on the chip should be electrically connected in common. Otherwise individual contacting of each cathode is required on opposite edges of the chip.
  • the adjacent chips are used to provide the electrical connection mechanism, for commoning up all the cathodes on one chip.
  • the connections that go from a cathode pad to the adjacent grid are broken, thereby providing the isolation which is necessary for each cathode from each grid in the use of the device as a cathode ray tube.
  • a metallization layer 11.1 is deposited with its periphery spaced by a distance D from the periphery 17 of the wafer.
  • a pattern of the layer 11.1 adjacent the cathode sites is removed.
  • a positive photoresist layer 42.3 is deposited on the layer 11.1 and substrate 7.1, and, by exposure and development, apertures 40.1, 40.2, 40.3 and 40.4 are formed in the layer 42.3.
  • Electron emission layers 50.1, 50.2, 50.3 and 50.4 in the form of needle-like particles of carbonate are cataphoretically deposited in the apertures 40.1, 40.2, 40.3 and 40.4, respectively, upon exposed areas 41.1, 41.2, 41.3 and 41.4 of the metallization layer 11.1.
  • the electric field is uniform over the cathode areas 40.1 to 40.4 and the process of depositing the electron emissive layers can be quantified both as to time and current.
  • the shapes of the pattern of metallization layer 11.1 removed are such as to almost surround each cathode area leaving a narrow connecting strip of metallization.
  • moats 53.1 to 53.4 (Fig.7) are formed around emission layers 50.1 to 50.4 and leads 51.1 to 51.4, respectivley.
  • a further layer 46.1 of positive photoresist is established over the resist layer 42.3 and over the emissive layers 50.1 to 50.4. Both layers 42.3 and 46.1 are exposed and developed through the use of a larger aperture light mask, leaving pedestals 48.11 to 48.14 encapsulating the top and sides of the emissive layers 50.1 to 50.4, respectivley.
  • Ultimate chip 55 (Fig.7) is defined by boundaries 55.1 to 55.4. Remaining exposed metallization 57 serves as a grid for the cathodes. Although shown connected, it may also be partitioned into separate grids as discussed hereinbefore.
  • the ultimate chip 55 is severed along boundaries 55.1 to 55.4 from the remainder of substrate 7.1 and metallization 11.1. Each of the four cathode regions 50.1 to 50.4 has a conductor lead 51.1 to 51.4 to the edge of the chip.
  • Each cathode and lead on the chip 55 is surrounded by a nonconductive region, e.g. cathode 50.1 and lead 51.1 is surrounded by a nonconductive region or moat 53.1.
  • the chips may be used in a cathode ray tube such as disclosed in EP-0039877, in which electrodes on the surface of the substrate are connected to bonding pads respectively. This permits each one of the electrodes to be individually controlled.
  • the grids are all connected to the grid bonding pad thereby resulting in a potential to the grid which is constant.
  • Another multibeam CRT embodiment with which this invention may be practised has the grids individually connected to separate bonding pads so that the potential to each grid can be individually controlled.
  • the potentials may be individually modulated between each cathode and the grid immediately surrounding that cathode. This may be done by maintaining the grid constant and individually controlling the cathode potentials, by maintaining the cathode potential constant and individually varying the grids, or by individually controlling the potential of each cathode and the potential of each grid.
  • each planar grid for each cathode may be in the shape of a C that surrounds a circular cathode.
  • the geometry of a multibeam CRT described hereinabove and illustrated by the drawings and the method of fabrication thereof have a number of advantages.
  • the use of photolithography defines the critical dimensions between the cathode and for fabrication of cathodes and grids of a multibeam CRT for the practice of this invention the grids which determine the electron gain as well as providing high resolution cathodes.
  • the small grid-cathode spacing achievable with photolithography gives a large transconductance and small grid-to-cathode voltages.
  • the coplanar grid provides a rugged construction with no microphonics and with very little if any grid current.
  • the cathode/ grid and heaters are fabricated as one integrated assembly which is a mechanically stable structure.
  • the use of photolithography allows many cathode-grid arrays to be fabricated at the same time thereby resulting in a substantially lower cost per unit.
  • Catophoresis is a particular form of electrophoresis.
  • Suspensions for electrophoresis in this invention may be prepared in many ways.
  • the essential feature is to gee l 'a charge onto the surface of the particle. This is usually achieved by ball milling the triple carbonate in a solvent of low electrical conductivity in the presence of a slight amount of freely ionized additive. As the crystals break due to milling, the highly reactive fresh breakage surface created absorbs the ions. This gives a charged particle capable of being moved and deposited by electrophoresis.
  • a recipe for an electrophoretic cathode carbonate suspension will now be described.
  • the ions may be supplied by the limited solubility of the carbonate precipitate in the nonconducting solvent. Pure demineralized distilled water, methyl ethyl alcohols or organic estere can be used as insulating dispersants.
  • the suspension example cited hereinbefore coats cataphoretically at between 10V to 100V per time period of 3 secs to 30 secs. The exact voltage and time are determined experimentally. Smooth deposits are achieved by the use of lower voltages. Needle-shaped particles which are very beneficial as cathode sources in accordance with this invention, have the added advantage that they deposit in a way that gives an oriented deposit with the long axis virtually normal to the surface being coated. The catephoretic-deposit is quite soft and easily damaged. An adhesion prcmoter, such as barium formate solution in water may be added. The deposit is dipped into the solution and then dried. Alternatively, a small percentage, e.g.
  • barium formate 2% to 5%, of barium formate may be milled into the initial electrophoretic suspension.
  • the barium formate is chosen because it melts and decomposes to barium carbonate. In so doing, it promotes adhesion of carbonate particle to particle and to the cathode metallization without loading the cathode coating with poisons or diluents.
  • a voltage source (not shown) is connected into the exposed cathode metallization, for example, 25 volts for 5 secs.
  • the cataphoretic deposition is baked at 80°C for 5 mins.
  • the baked cataphoretic deposition is dipped in barium formate saturated water solution and rebaked to promote adhesion of carbonate particles to each other and to the substrate.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Solid Thermionic Cathode (AREA)
EP82103884A 1981-06-30 1982-05-05 Verfahren zur Herstellung einer Kathodenstruktur Expired EP0068111B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US27928181A 1981-06-30 1981-06-30
US279281 1981-06-30

Publications (3)

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EP0068111A2 true EP0068111A2 (de) 1983-01-05
EP0068111A3 EP0068111A3 (en) 1983-05-11
EP0068111B1 EP0068111B1 (de) 1985-11-21

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EP82103884A Expired EP0068111B1 (de) 1981-06-30 1982-05-05 Verfahren zur Herstellung einer Kathodenstruktur

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EP (1) EP0068111B1 (de)
JP (1) JPS587740A (de)
BR (1) BR8203186A (de)
DE (1) DE3267536D1 (de)
ES (2) ES513515A0 (de)
ZA (1) ZA823101B (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0755064A2 (de) * 1995-07-17 1997-01-22 Hitachi, Ltd. Kathode mit einem Vorratsbehälter und Herstellungsverfahren derselben
US11626273B2 (en) 2019-04-05 2023-04-11 Modern Electron, Inc. Thermionic energy converter with thermal concentrating hot shell

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60224847A (ja) * 1983-12-21 1985-11-09 東洋紡績株式会社 弾性たて編地およびその製造法
JPS6143288U (ja) * 1984-08-25 1986-03-20 マツモト・テキスタイル株式会社 伸縮性経編地
JPS61119757A (ja) * 1984-11-16 1986-06-06 東洋紡績株式会社 弾性たて編み地
JPH0257988U (de) * 1988-10-24 1990-04-26
US11205564B2 (en) 2017-05-23 2021-12-21 Modern Electron, Inc. Electrostatic grid device to reduce electron space charge

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3978364A (en) * 1974-07-24 1976-08-31 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Integrated structure vacuum tube
US4069436A (en) * 1975-06-11 1978-01-17 Sony Corporation Flat thermionic cathode
DE2156360B2 (de) * 1971-11-12 1978-04-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer Bürstenkathode
US4121130A (en) * 1976-10-29 1978-10-17 Rca Corporation Cathode structure and method of operating the same
DE2536363B2 (de) * 1974-08-16 1978-11-09 Hitachi, Ltd., Tokio Dünnschicht-Feldelektronenemissionsquelle und Verfahren zu ihrer Herstellung
US4138622A (en) * 1977-08-04 1979-02-06 The United States Of America As Represented By The United States Department Of Energy High temperature electronic gain device
EP0039877A1 (de) * 1980-05-12 1981-11-18 International Business Machines Corporation Kathodenstrahlröhre zum Erzeugen mehrerer Elektronenstrahlen

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GB1457105A (en) * 1973-06-01 1976-12-01 English Electric Valve Co Ltd Electron guns
JPS6055942B2 (ja) * 1975-08-25 1985-12-07 ソニー株式会社 カソ−ドの製法
NL7810808A (nl) * 1978-10-31 1980-05-02 Philips Nv Inrichting en werkwijze voor het vervaardigen van kathodes.
GB2100502B (en) * 1978-11-30 1983-08-03 Varian Associates Dispenser cathodes

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2156360B2 (de) * 1971-11-12 1978-04-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer Bürstenkathode
US3978364A (en) * 1974-07-24 1976-08-31 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Integrated structure vacuum tube
DE2536363B2 (de) * 1974-08-16 1978-11-09 Hitachi, Ltd., Tokio Dünnschicht-Feldelektronenemissionsquelle und Verfahren zu ihrer Herstellung
US4069436A (en) * 1975-06-11 1978-01-17 Sony Corporation Flat thermionic cathode
US4121130A (en) * 1976-10-29 1978-10-17 Rca Corporation Cathode structure and method of operating the same
US4138622A (en) * 1977-08-04 1979-02-06 The United States Of America As Represented By The United States Department Of Energy High temperature electronic gain device
EP0039877A1 (de) * 1980-05-12 1981-11-18 International Business Machines Corporation Kathodenstrahlröhre zum Erzeugen mehrerer Elektronenstrahlen

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
WALTER H. KOHL, "Handbook of Materials and Techniques for vacuum devices", chapter 16, 1967 REINHOLD PUBLISHING CORPORATION, "Cathodes and Heaters", New York pages 514-521 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0755064A2 (de) * 1995-07-17 1997-01-22 Hitachi, Ltd. Kathode mit einem Vorratsbehälter und Herstellungsverfahren derselben
EP0755064A3 (de) * 1995-07-17 1997-06-11 Hitachi Ltd Kathode mit einem Vorratsbehälter und Herstellungsverfahren derselben
US5838096A (en) * 1995-07-17 1998-11-17 Hitachi, Ltd. Cathode having a reservoir and method of manufacturing the same
US11626273B2 (en) 2019-04-05 2023-04-11 Modern Electron, Inc. Thermionic energy converter with thermal concentrating hot shell

Also Published As

Publication number Publication date
JPS587740A (ja) 1983-01-17
EP0068111A3 (en) 1983-05-11
BR8203186A (pt) 1983-05-17
ES8308153A1 (es) 1983-08-01
ES8402459A1 (es) 1984-01-16
ZA823101B (en) 1983-03-30
JPH0363169B2 (de) 1991-09-30
ES518317A0 (es) 1984-01-16
ES513515A0 (es) 1983-08-01
DE3267536D1 (en) 1986-01-02
EP0068111B1 (de) 1985-11-21

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