EP0054645B1 - Commutateur à diode PIN - Google Patents

Commutateur à diode PIN Download PDF

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Publication number
EP0054645B1
EP0054645B1 EP81108177A EP81108177A EP0054645B1 EP 0054645 B1 EP0054645 B1 EP 0054645B1 EP 81108177 A EP81108177 A EP 81108177A EP 81108177 A EP81108177 A EP 81108177A EP 0054645 B1 EP0054645 B1 EP 0054645B1
Authority
EP
European Patent Office
Prior art keywords
pin
diode
lines
compensation
diode switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP81108177A
Other languages
German (de)
English (en)
Other versions
EP0054645A2 (fr
EP0054645A3 (en
Inventor
Manfred Wondrowitz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to AT81108177T priority Critical patent/ATE16059T1/de
Publication of EP0054645A2 publication Critical patent/EP0054645A2/fr
Publication of EP0054645A3 publication Critical patent/EP0054645A3/de
Application granted granted Critical
Publication of EP0054645B1 publication Critical patent/EP0054645B1/fr
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices

Definitions

  • the invention relates to a PIN diode switch with high blocking attenuation, which, between an input for the signal to be switched and an output, has an arrangement of two four-terminal poles connected in series, which phase-shift the signal to be switched by 90 ° at the operating frequency. in which a PIN diode is switched on as a cross-branch between the connection of the two four-pin connections and a common ground line.
  • PIN diodes are often used for switching tasks.
  • PIN diodes have an effective resistance for HF, the size of which depends on the strength of an impressed control direct current. If no direct current flows through the PIN diode, then it only has a small, very low-loss capacity without parametric effects.
  • the capacitance is independent of the RF voltage applied.
  • PIN diodes are generally parallel to the consumer. Since the forward resistance of the switched PIN diode is in the order of magnitude between 0.5 and 1 ohm, the required values for the blocking attenuation are usually not achieved in practice with a single diode, but networks of PIN diodes are required. As a basic circuit, networks with three PIN diodes, which are connected as a ⁇ element or T element (electronics practice, No. 12, December 1972, pages 14 to 22), are known.
  • a high attenuation PIN diode switch is known from JP-A-5212963.
  • the PIN diode switch essentially consists of two ⁇ / 4 lines connected in series and a PIN diode which is connected to ground from the connection point of the X / 4 lines.
  • Diode chains are also used for microwave switches, in which several PIN diodes are coupled to one another via so-called inverting elements (four-pole) - in the microwave range these are preferably X / 4 lines.
  • the «inverting elements rotate the phase of the voltage by 90 ° at the operating frequency.
  • all diodes are grounded on one side and always have the same switching status with each other (see above electronics practice, US-A-3 859 609).
  • the object of the invention is to provide a PIN diode switch which, with little circuit complexity, has a high blocking attenuation and a low pass loss.
  • the object is achieved in that between the input and the output a compensation network for compensating for the residual voltage coming from the input to the output in the case of a conductive PIN diode is switched on.
  • the circuit is particularly simple if the two four-pole are ⁇ / 4 lines.
  • the invention is based on the knowledge that a higher blocking attenuation is possible through compensation.
  • the circuit arrangement is particularly simple and space-saving.
  • the PIN diode is switched between two X / 4 lines.
  • a compensation network is connected in parallel with the A / 4 lines. With this arrangement, much higher attenuation than 25 dB is achieved.
  • RF losses are generally lower than diode networks.
  • the area requirement decreases and a compensation of undesirable diode reactances is largely possible.
  • the) £ / 4 lines and the compensation network have a common ground line. These measures make the diode switch and the compensation network particularly simple.
  • a PIN diode connected in parallel to the consumer and one-sided to ground is the most effective solution above approx. 1 GHz.
  • the compensation network is also particularly simple.
  • the compensation network consists of a parallel connection of a Compensation resistor and a compensation capacitor in the series branch.
  • This simple parallel connection of a resistor with a capacitance means that the PIN diode can be compensated over a wide range.
  • the PIN diode switch is implemented using layer technology and the X / 4 lines are implemented as printed conductor tracks.
  • This circuit is characterized by a particularly small footprint. The entire back of the printed circuit serves as a ground.
  • the compensation capacity is formed by a special configuration of the supply lines of the X / 4 lines.
  • the compensation capacity is generated by a special line routing.
  • Fig. 1 shows the basic circuit diagram of a PIN diode switch.
  • a generator G with the internal resistance Z is connected to a line L via a decoupling capacitor C E1 .
  • the generator G here symbolizes the source of a signal to be switched.
  • the terminating resistor Z v is connected to the other end of the line L via a second decoupling capacitor CE2.
  • the PIN diode D is connected between the line L and ground in parallel to the consumer Z v or in parallel to the generator G.
  • the equivalent circuit diagram of the PIN diode consists of a parallel capacitance CP ⁇ 0.3 pF, which is parallel to the connection terminals of the PIN diodes.
  • FIG. 2 An arrangement according to the invention is shown in FIG. 2.
  • the generator G with the internal resistance Z is connected via the first decoupling capacitor C E1 to the input E of a ⁇ / 4-long line L1 with the practically real characteristic impedance Z L.
  • the line L1 was shown as a four-pole, the second input of which is connected to the second connection of the generator G.
  • the PIN diode D is connected as a cross member, which is followed by a second ⁇ / 4 line L2, at the output A of which a consumer Z v is connected via a second decoupling capacitor C E2 is switched on.
  • a further four-pole K is connected, which contains the compensation circuit -a compensation resistor R K connected between input E and output A of the arrangement, to which a compensation capacitance C K can be connected in parallel.
  • the lines L1 and L2 have the characteristic impedance Z L , which is generally the same or similar to the generator resistance Z l and the consumer resistance Zv.
  • the PIN diode D connected in parallel to the consumer does not represent an ideal short circuit due to its remaining forward resistance R D of approx. 1 ohm and the longitudinal inductance L D determined by its mechanical dimensions, a residual voltage remains at the coupling point of the diode. Seen from the consumer, this residual voltage causes the PIN diode to appear as a source that generates a wave propagating towards the consumer. However, the decoupling is limited.
  • the longitudinal inductance L D of the PIN diode is to be taken into account, it can be largely compensated for by the compensation capacitor C K.
  • FIG. 3 shows the structure of the PIN diode switch according to the invention in layered technology.
  • the PIN diode D is here in the design. «Chip on rivet inserted.
  • L1 and L2 represent the ⁇ / 4 lines.
  • the compensation resistor R K and the compensation capacitor C K serve to compensate the diode reactances.
  • the compensation capacitor C K can be simulated by a special line routing, in which the lines L 1 and L 2 are formed symmetrically and approach one another during the transition into the supply lines Z1 and Z2.
  • the input of the circuit was designated E and the output A according to FIG. 2.
  • the copper cladding on the back of the layer circuit serves as the ground. With such an arrangement, blocking attenuation greater than 60 dB can be achieved.
  • FIG. 4 A variant for increasing the bandwidth is shown in FIG. 4.
  • the compensation resistor R K was replaced by two compensation resistors R K1 and R K2 .
  • the compensation resistors R K1 and R K2 are arranged at a distance ⁇ L 1 smaller than ⁇ / 4.
  • the distance ⁇ L 2 of the second compensation resistor R K2 to the diode D is also less than ⁇ / 4.
  • the curve of the blocking attenuation as a function of the frequency f is shown in curve 3 of FIG. 5.
  • the damping curve of the circuit arrangement according to FIG. 2 was drawn in as curve 1.

Landscapes

  • Electronic Switches (AREA)
  • Electrophonic Musical Instruments (AREA)
  • Attenuators (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
  • Filters And Equalizers (AREA)
  • Reduction Or Emphasis Of Bandwidth Of Signals (AREA)

Claims (13)

1. Commutateur à diode PIN présentant un affaiblissement de blocage élevé, qui comporte entre une entrée (E) pour le signal (U1) devant être commuté et une sortie (A), un dispositif formé de deux quadripôles (L1, L2) branchés en série et qui réalisent, pour la fréquence de service, une rotation de phase de 90° du signal devant être commuté, et dans lequel une diode PIN (E) est montée en tant que branche transversale, entre la liaison des deux quadripôles (L1, L2) et un conducteur de masse commun, caractérisé par le fait qu'entre l'entrée (E) et la sortie (A) se trouve branché un réseau de compensation (K) servant à compenser la tension résiduelle parvenant de l'entrée (E) à la sortie (A) lorsque la diode PIN (D) est conductrice.
2. Commutateur à diode PIN suivant la revendication 1, dans lequel les deux quadripôles (L1, L2) sont des lignes X/4.
3. Commutateur à diode PIN suivant la revendication 2, caractérisé par le fait que les lignes λ/4, (L1, L2) et le réseau de compensation (K) possèdent un conducteur de masse commun (L12).
4. Commutateur à diode PIN suivant la revendication 1, ou 3, caractérisé par le fait que le réseau de compensation est constitué par un montage parallèle d'une résistance de compensation (RK) et d'un condensateur de compensation (CK) dans la branche longitudinale.
5. Commutateur à diode PIN suivant la revendication 4 et la revendication 2 ou 3, caractérisé par le fait que le condensateur de compensation (CK) est formé par un agencement particulier des conducteurs d'alimentation (Z1, Z2) des lignes λ/4 (L1, L2).
6. Commutateur à diode PIN suivant la revendication 5, caractérisé par le fait que le condensateur de compensation (CK) est formé par rapprochement réciproque des conducteurs d'alimentation (Z1, Z2) et par rapprochement réciproque des lignes λ/4 (L1, L2), dans la zone de jonction entre les conducteurs d'alimentation (Z1, Z2) et les lignes A/4 (L1, L2).
7. Commutateur à diode PIN suivant la revendication 2 ou 3, caractérisé par le fait qu'en vue d'accroître la largeur de bande, il est prévu deux résistances de compensation (RK1, RK2), dont la première (RK1) raccorde entre elles l'entrée (E) et la sortie (A) et dont la seconde (RK2) relie entre eux deux points des lignes λ/4, éloignés d'une distance (ΔL1) inférieure à λ/4 par rapport à l'entrée (E) et à la sortie (A), de telle sorte que la distance (ΔL2) entre la diode PIN (D) et la seconde résistance de compensation est inférieure à X/4. (figure 4).
8. Commutateur à diode PIN suivant la revendication 2 ou l'une des revendications dépendantes de cette revendication, caractérisé par le fait que le commutateur à diode PIN est réalisé suivant la technique à couches et que les lignes λ/4 (L1, L2) sont réalisées sous la forme de voies conductrices imprimées.
9. Commutateur à diode PIN suivant l'une des revendications précédentes, caractérisé par le fait qu'il est prévu un dispositif pour modifier le courant de commande de la diode PIN au moyen de laquelle le maximum de l'affaiblissement peut être décalé à l'intérieur d'une plage prédéterminée de fréquences.
10. Commutateur à diode PIN suivant l'une des revendications précédentes, caractérisé par le fait qu'une autre diode et notamment deux autres diodes PIN sont disposées à une distance λ/4 par rapport à la (première) diode PIN (D) ou entre elles et que le réseau de compensation (K) shunte l'ensemble de ce dispositif entre l'entrée (E) et la sortie (A).
11. Commutateur à diode PIN suivant la revendication 2 ou l'une des revendications dépendantes de cette revendication, caractérisé par le fait que pour accroître la largeur de bande, la résistance d'utilisation (Zv) raccordée à la sortie (A) est désadaptée par rapport à l'impédance caractéristique (ZJ des lignes λ/4 (L1, L2).
12. Circuit-série formé de plusieurs commutateurs de diodes PIN suivant l'une des revendications 1 à 10.
13. Circuit-série suivant la revendication 12, caractérisé par le fait qu'il est réalisé sous la forme d'un circuit à couches.
EP81108177A 1980-12-18 1981-10-09 Commutateur à diode PIN Expired EP0054645B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT81108177T ATE16059T1 (de) 1980-12-18 1981-10-09 Pin-dioden-schalter.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3047869 1980-12-18
DE3047869A DE3047869C1 (de) 1980-12-18 1980-12-18 PIN-Diodenschalter

Publications (3)

Publication Number Publication Date
EP0054645A2 EP0054645A2 (fr) 1982-06-30
EP0054645A3 EP0054645A3 (en) 1982-12-01
EP0054645B1 true EP0054645B1 (fr) 1985-10-09

Family

ID=6119579

Family Applications (1)

Application Number Title Priority Date Filing Date
EP81108177A Expired EP0054645B1 (fr) 1980-12-18 1981-10-09 Commutateur à diode PIN

Country Status (5)

Country Link
EP (1) EP0054645B1 (fr)
AT (1) ATE16059T1 (fr)
AU (1) AU529008B2 (fr)
DE (1) DE3047869C1 (fr)
YU (1) YU296281A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3534980A1 (de) * 1985-10-01 1987-04-02 Licentia Gmbh Hohlleiterschalter
DE102012208529B4 (de) 2012-05-22 2018-10-18 Rohde & Schwarz Gmbh & Co. Kg Elektronischer Schalter mit Kompensation nichtlinearer Verzerrungen

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53136952A (en) * 1977-05-06 1978-11-29 Fujitsu Ltd High-frequency switch

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3775708A (en) * 1973-01-12 1973-11-27 Anaren Microwave Inc Microwave signal attenuator
US3859609A (en) * 1973-07-23 1975-01-07 Texas Instruments Inc Absorptive pin attenuators
JPS52129263A (en) * 1976-04-22 1977-10-29 Nec Corp Variable attenuator
JPS6056330B2 (ja) * 1977-05-06 1985-12-10 日本電気株式会社 調整機構付きａｄ変換回路
JPS55109019A (en) * 1979-02-15 1980-08-21 Victor Co Of Japan Ltd Pin diode switch circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53136952A (en) * 1977-05-06 1978-11-29 Fujitsu Ltd High-frequency switch

Also Published As

Publication number Publication date
ATE16059T1 (de) 1985-10-15
EP0054645A2 (fr) 1982-06-30
AU529008B2 (en) 1983-05-19
DE3047869C1 (de) 1982-05-27
YU296281A (en) 1984-06-30
AU7859581A (en) 1982-06-24
EP0054645A3 (en) 1982-12-01

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