EP0019725A1 - Einen Strahl mit energiereichen Teilchen verwendendes Abscheidungsverfahren - Google Patents

Einen Strahl mit energiereichen Teilchen verwendendes Abscheidungsverfahren Download PDF

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Publication number
EP0019725A1
EP0019725A1 EP80102246A EP80102246A EP0019725A1 EP 0019725 A1 EP0019725 A1 EP 0019725A1 EP 80102246 A EP80102246 A EP 80102246A EP 80102246 A EP80102246 A EP 80102246A EP 0019725 A1 EP0019725 A1 EP 0019725A1
Authority
EP
European Patent Office
Prior art keywords
target
substrate
ions
positive
negative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP80102246A
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English (en)
French (fr)
Other versions
EP0019725B1 (de
Inventor
Jerome John Cuomo
Richard Joseph Gambino
James Mckell Edwin Harper
John Demosthenes Kupstis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
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International Business Machines Corp
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Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of EP0019725A1 publication Critical patent/EP0019725A1/de
Application granted granted Critical
Publication of EP0019725B1 publication Critical patent/EP0019725B1/de
Expired legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
EP80102246A 1979-05-18 1980-04-25 Einen Strahl mit energiereichen Teilchen verwendendes Abscheidungsverfahren Expired EP0019725B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/040,339 US4250009A (en) 1979-05-18 1979-05-18 Energetic particle beam deposition system
US40339 2005-01-21

Publications (2)

Publication Number Publication Date
EP0019725A1 true EP0019725A1 (de) 1980-12-10
EP0019725B1 EP0019725B1 (de) 1983-11-09

Family

ID=21910469

Family Applications (1)

Application Number Title Priority Date Filing Date
EP80102246A Expired EP0019725B1 (de) 1979-05-18 1980-04-25 Einen Strahl mit energiereichen Teilchen verwendendes Abscheidungsverfahren

Country Status (4)

Country Link
US (1) US4250009A (de)
EP (1) EP0019725B1 (de)
JP (1) JPS5842269B2 (de)
DE (1) DE3065501D1 (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0132398A1 (de) * 1983-07-20 1985-01-30 Konica Corporation Verfahren und Vorrichtung zur Erzeugung von Ionenstrahlen
EP0134399A2 (de) * 1983-05-12 1985-03-20 International Business Machines Corporation Ionen- und Dampfquelle mit einer einzigen Achse
WO1989004382A1 (en) * 1987-11-02 1989-05-18 Jens Christiansen Process and device for producing thin layers of a material which melts or sublimes at high temperatures on a substrate
GB2213501A (en) * 1987-12-11 1989-08-16 Plessey Co Plc Production of superconducting thin films by ion beam sputtering from a single ceramic target

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4713157A (en) * 1976-02-17 1987-12-15 Ramtron Corporation Combined integrated circuit/ferroelectric memory device, and ion beam methods of constructing same
JPS5911988B2 (ja) * 1980-01-23 1984-03-19 株式会社日立製作所 イオン打込み方法
US4701592A (en) * 1980-11-17 1987-10-20 Rockwell International Corporation Laser assisted deposition and annealing
DE61906T1 (de) * 1981-03-26 1983-05-26 Inoue-Japax Research Inc., Yokohama, Kanagawa Verfahren und vorrichtung zur bearbeitung eines werkstueckes mit energiereichen teilchen und ein auf diese weise bearbeitetes produkt.
US4419203A (en) * 1982-03-05 1983-12-06 International Business Machines Corporation Apparatus and method for neutralizing ion beams
US4471224A (en) * 1982-03-08 1984-09-11 International Business Machines Corporation Apparatus and method for generating high current negative ions
US4414069A (en) * 1982-06-30 1983-11-08 International Business Machines Corporation Negative ion beam selective etching process
US4704168A (en) * 1984-10-16 1987-11-03 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Ion-beam nitriding of steels
US4664769A (en) * 1985-10-28 1987-05-12 International Business Machines Corporation Photoelectric enhanced plasma glow discharge system and method including radiation means
US4747922A (en) * 1986-03-25 1988-05-31 The United States Of America As Represented By The United States Department Of Energy Confined ion beam sputtering device and method
US4793908A (en) * 1986-12-29 1988-12-27 Rockwell International Corporation Multiple ion source method and apparatus for fabricating multilayer optical films
US4885070A (en) * 1988-02-12 1989-12-05 Leybold Aktiengesellschaft Method and apparatus for the application of materials
US4915810A (en) * 1988-04-25 1990-04-10 Unisys Corporation Target source for ion beam sputter deposition
US4925542A (en) * 1988-12-08 1990-05-15 Trw Inc. Plasma plating apparatus and method
DE3904991A1 (de) * 1989-02-18 1990-08-23 Leybold Ag Kathodenzerstaeubungsvorrichtung
US4985657A (en) * 1989-04-11 1991-01-15 Lk Technologies, Inc. High flux ion gun apparatus and method for enhancing ion flux therefrom
IT1238337B (it) * 1990-01-23 1993-07-12 Cons Ric Microelettronica Dispositivo per la ionizzazione di metalli ad alta temperatura di fusione, utilizzabile su impiantatori ionici del tipo impiegante sorgenti di ioni di tipo freeman o assimilabili
US5078847A (en) * 1990-08-29 1992-01-07 Jerry Grosman Ion plating method and apparatus
US5415753A (en) * 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
US5449920A (en) * 1994-04-20 1995-09-12 Northeastern University Large area ion implantation process and apparatus
US5679270A (en) * 1994-10-24 1997-10-21 Howmet Research Corporation Method for removing ceramic material from castings using caustic medium with oxygen getter
US6132564A (en) * 1997-11-17 2000-10-17 Tokyo Electron Limited In-situ pre-metallization clean and metallization of semiconductor wafers
US5601654A (en) * 1996-05-31 1997-02-11 The Regents Of The University Of California, Office Of Technology Transfer Flow-through ion beam source
US6592728B1 (en) * 1998-08-04 2003-07-15 Veeco-Cvc, Inc. Dual collimated deposition apparatus and method of use
US6488821B2 (en) 2001-03-16 2002-12-03 4 Wave Inc. System and method for performing sputter deposition using a divergent ion beam source and a rotating substrate
US6402901B1 (en) * 2001-03-16 2002-06-11 4 Wave, Inc. System and method for performing sputter deposition using a spherical geometry
JP2002289584A (ja) * 2001-03-26 2002-10-04 Ebara Corp 表面処理方法
US20040231843A1 (en) * 2003-05-22 2004-11-25 Simpson Nell A. A. Lubricant for use in a wellbore
FR2869324B1 (fr) * 2004-04-21 2007-08-10 Saint Gobain Procede de depot sous vide
US20060049041A1 (en) * 2004-08-20 2006-03-09 Jds Uniphase Corporation Anode for sputter coating
EP1630260B1 (de) * 2004-08-20 2011-07-13 JDS Uniphase Inc. Magnetverschluss für eine Dampfabscheidungsvorrichtung
US8500973B2 (en) * 2004-08-20 2013-08-06 Jds Uniphase Corporation Anode for sputter coating
US7785456B2 (en) * 2004-10-19 2010-08-31 Jds Uniphase Corporation Magnetic latch for a vapour deposition system
US7879209B2 (en) * 2004-08-20 2011-02-01 Jds Uniphase Corporation Cathode for sputter coating
US7954219B2 (en) * 2004-08-20 2011-06-07 Jds Uniphase Corporation Substrate holder assembly device
JP4583868B2 (ja) * 2004-10-15 2010-11-17 株式会社昭和真空 スパッタ装置
US20090020415A1 (en) * 2007-07-16 2009-01-22 Michael Gutkin "Iontron" ion beam deposition source and a method for sputter deposition of different layers using this source
CN104538457A (zh) * 2015-01-15 2015-04-22 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板和显示装置
JP2020023739A (ja) * 2018-08-08 2020-02-13 株式会社アルバック イオンビームスパッタリング装置及びイオンビームスパッタリング方法
GB2590398B (en) * 2019-12-16 2022-08-31 Dyson Technology Ltd Methods of making anode architectures

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE875249C (de) * 1950-12-05 1953-04-30 Sueddeutsche Lab G M B H Bedampfungseinrichtung
DD52181A1 (de) * 1965-07-03 1966-12-05 Siegfried Schiller Verfahren zur Herstellung dünner Schichten auf einem Träger mittels Ionenstrahlzerstäubung sowie Einrichtung zur Durchführung des Verfahrens
DE1934326A1 (de) * 1968-10-17 1970-08-06 Inst Elektronische Bauelemente Mehrstrahl-Ionenzerstaeubungssystem zur Herstellung duenner einheitlicher oder legierter Schichten
DE2018750A1 (de) * 1969-04-21 1970-11-12 Eastman Kodak Co., Rochester, N.Y. (V.St.A.) Trioden-Plasma-Sprühbeschicht izngsvorrichtung
AT336701B (de) * 1972-04-05 1977-05-25 Grasenick Fritz Dr Verfahren zur leitenden beschichtung nichtleitender materialien fur die elektronenmikroskopische praparation
US4096055A (en) * 1976-12-29 1978-06-20 Johnson Andrew G Electron microscopy coating apparatus and methods
DE2601066B2 (de) * 1975-01-13 1978-08-10 Sharp K.K., Osaka (Japan) Plattierungsverfahren

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4108751A (en) * 1977-06-06 1978-08-22 King William J Ion beam implantation-sputtering
US4132614A (en) * 1977-10-26 1979-01-02 International Business Machines Corporation Etching by sputtering from an intermetallic target to form negative metallic ions which produce etching of a juxtaposed substrate

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE875249C (de) * 1950-12-05 1953-04-30 Sueddeutsche Lab G M B H Bedampfungseinrichtung
DD52181A1 (de) * 1965-07-03 1966-12-05 Siegfried Schiller Verfahren zur Herstellung dünner Schichten auf einem Träger mittels Ionenstrahlzerstäubung sowie Einrichtung zur Durchführung des Verfahrens
DE1934326A1 (de) * 1968-10-17 1970-08-06 Inst Elektronische Bauelemente Mehrstrahl-Ionenzerstaeubungssystem zur Herstellung duenner einheitlicher oder legierter Schichten
DE2018750A1 (de) * 1969-04-21 1970-11-12 Eastman Kodak Co., Rochester, N.Y. (V.St.A.) Trioden-Plasma-Sprühbeschicht izngsvorrichtung
AT336701B (de) * 1972-04-05 1977-05-25 Grasenick Fritz Dr Verfahren zur leitenden beschichtung nichtleitender materialien fur die elektronenmikroskopische praparation
DE2601066B2 (de) * 1975-01-13 1978-08-10 Sharp K.K., Osaka (Japan) Plattierungsverfahren
US4096055A (en) * 1976-12-29 1978-06-20 Johnson Andrew G Electron microscopy coating apparatus and methods

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0134399A2 (de) * 1983-05-12 1985-03-20 International Business Machines Corporation Ionen- und Dampfquelle mit einer einzigen Achse
EP0134399A3 (en) * 1983-05-12 1986-10-29 International Business Machines Corporation Single axis combined ion and vapour source
EP0132398A1 (de) * 1983-07-20 1985-01-30 Konica Corporation Verfahren und Vorrichtung zur Erzeugung von Ionenstrahlen
WO1989004382A1 (en) * 1987-11-02 1989-05-18 Jens Christiansen Process and device for producing thin layers of a material which melts or sublimes at high temperatures on a substrate
GB2213501A (en) * 1987-12-11 1989-08-16 Plessey Co Plc Production of superconducting thin films by ion beam sputtering from a single ceramic target

Also Published As

Publication number Publication date
JPS5842269B2 (ja) 1983-09-19
EP0019725B1 (de) 1983-11-09
JPS55154573A (en) 1980-12-02
US4250009A (en) 1981-02-10
DE3065501D1 (en) 1983-12-15

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