EE00584U1 - CuInS2 absorberkihiga päikeseelemendi valmistamise meetod - Google Patents

CuInS2 absorberkihiga päikeseelemendi valmistamise meetod

Info

Publication number
EE00584U1
EE00584U1 EEU200500045U EEU200500045U EE00584U1 EE 00584 U1 EE00584 U1 EE 00584U1 EE U200500045 U EEU200500045 U EE U200500045U EE U200500045 U EEU200500045 U EE U200500045U EE 00584 U1 EE00584 U1 EE 00584U1
Authority
EE
Estonia
Prior art keywords
cuins2
fabricating
solar cell
absorber solar
absorber
Prior art date
Application number
EEU200500045U
Other languages
English (en)
Inventor
Krunks Malle
Mere Arvo
Kijatkina Olga
Original Assignee
Tallinna Tehnikaülikool
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tallinna Tehnikaülikool filed Critical Tallinna Tehnikaülikool
Publication of EE00584U1 publication Critical patent/EE00584U1/et

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
EEU200500045U 2004-06-07 2005-06-07 CuInS2 absorberkihiga päikeseelemendi valmistamise meetod EE00584U1 (et)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US57766404P 2004-06-07 2004-06-07

Publications (1)

Publication Number Publication Date
EE00584U1 true EE00584U1 (et) 2006-01-16

Family

ID=35788852

Family Applications (2)

Application Number Title Priority Date Filing Date
EEP200500018A EE05373B1 (et) 2004-06-07 2005-06-07 CuInS2 absorberkihiga p„ikeseelemendi valmistamise meetod
EEU200500045U EE00584U1 (et) 2004-06-07 2005-06-07 CuInS2 absorberkihiga päikeseelemendi valmistamise meetod

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EEP200500018A EE05373B1 (et) 2004-06-07 2005-06-07 CuInS2 absorberkihiga p„ikeseelemendi valmistamise meetod

Country Status (2)

Country Link
US (1) US20050271827A1 (et)
EE (2) EE05373B1 (et)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1684362A3 (en) * 2004-12-02 2006-08-02 Technische Universiteit Delft Process for the production of thin layers, preferably for a photovoltaic cell
AT503837B1 (de) * 2006-06-22 2009-01-15 Isovolta Verfahren zum herstellen von photoaktiven schichten sowie bauelemente umfassend diese schicht(en)
US20080216885A1 (en) 2007-03-06 2008-09-11 Sergey Frolov Spectrally adaptive multijunction photovoltaic thin film device and method of producing same
WO2009006910A2 (en) * 2007-07-09 2009-01-15 Tallinn University Of Technology Photovoltaic cell based on zinc oxide nanorods and method for making the same
US20090211622A1 (en) * 2008-02-21 2009-08-27 Sunlight Photonics Inc. Multi-layered electro-optic devices
US20090215215A1 (en) * 2008-02-21 2009-08-27 Sunlight Photonics Inc. Method and apparatus for manufacturing multi-layered electro-optic devices
EP2257970A4 (en) * 2008-03-05 2015-09-02 Hanergy Hi Tech Power Hk Ltd BUFFER LAYER DEPOSITION FOR THIN FILM SOLAR CELLS
DE212009000032U1 (de) 2008-03-05 2010-11-04 Global Solar Energy, Inc., Tuscon System zum Aufbringen einer Chalcogenid-Pufferschicht auf einen flexiblen Träger
US9371226B2 (en) 2011-02-02 2016-06-21 Battelle Energy Alliance, Llc Methods for forming particles
US8951446B2 (en) 2008-03-13 2015-02-10 Battelle Energy Alliance, Llc Hybrid particles and associated methods
US8324414B2 (en) 2009-12-23 2012-12-04 Battelle Energy Alliance, Llc Methods of forming single source precursors, methods of forming polymeric single source precursors, and single source precursors and intermediate products formed by such methods
US8003070B2 (en) * 2008-03-13 2011-08-23 Battelle Energy Alliance, Llc Methods for forming particles from single source precursors
US10211353B2 (en) * 2008-04-14 2019-02-19 Sunlight Photonics Inc. Aligned bifacial solar modules
US8110428B2 (en) * 2008-11-25 2012-02-07 Sunlight Photonics Inc. Thin-film photovoltaic devices
US8835748B2 (en) * 2009-01-06 2014-09-16 Sunlight Photonics Inc. Multi-junction PV module
WO2010093076A1 (ko) * 2009-02-13 2010-08-19 충남대학교 산학협력단 화학 용액 성장법에 의한 황원소 공공 결함을 갖는 ＣｄＳ 박막의 제조방법 및 상기 박막이 적용된 태양전지
KR101014039B1 (ko) 2009-03-31 2011-02-10 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR101055135B1 (ko) 2009-04-01 2011-08-08 엘지이노텍 주식회사 태양전지
US7838403B1 (en) 2009-09-14 2010-11-23 International Business Machines Corporation Spray pyrolysis for large-scale production of chalcopyrite absorber layer in photovoltaic devices
US8501524B2 (en) * 2010-02-26 2013-08-06 Electronics And Telecommunications Research Institute Method of manufacturing thin-film light-absorbing layer, and method of manufacturing thin-film solar cell using the same
JP5641981B2 (ja) * 2010-03-02 2014-12-17 大阪瓦斯株式会社 量産に適した方法で製造可能な光電変換素子
WO2011143404A2 (en) 2010-05-13 2011-11-17 First Solar, Inc Photovotaic device conducting layer
US20120064699A1 (en) * 2010-09-08 2012-03-15 Alion, Inc. Methods and systems for spray pyrolysis with addition of volatile non-polar materials
CN102169910B (zh) * 2011-01-14 2013-06-05 南开大学 一种基于硫属化合物纳米晶的薄膜太阳能电池
JP5808562B2 (ja) * 2011-04-04 2015-11-10 Tdk株式会社 太陽電池、及び太陽電池の製造方法
US8726835B2 (en) * 2011-06-30 2014-05-20 Jiaxiong Wang Chemical bath deposition apparatus for fabrication of semiconductor films
CN102368512B (zh) * 2011-11-16 2013-06-19 上海大学 电化学和固体硫化法在基片上制备CuInS2的方法
US9443728B2 (en) * 2013-08-16 2016-09-13 Applied Materials, Inc. Accelerated relaxation of strain-relaxed epitaxial buffers by use of integrated or stand-alone thermal processing

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5180686A (en) * 1988-10-31 1993-01-19 Energy Conversion Devices, Inc. Method for continuously deposting a transparent oxide material by chemical pyrolysis
US5501744A (en) * 1992-01-13 1996-03-26 Photon Energy, Inc. Photovoltaic cell having a p-type polycrystalline layer with large crystals
US6387844B1 (en) * 1994-10-31 2002-05-14 Akira Fujishima Titanium dioxide photocatalyst
US6225149B1 (en) * 1999-05-03 2001-05-01 Feng Yuan Gan Methods to fabricate thin film transistors and circuits
DE19956735B4 (de) * 1999-11-25 2008-08-21 Shell Erneuerbare Energien Gmbh Dünnfilmsolarzelle mit einer Chalkopyritverbindung und einer Titan und Sauerstoff enthaltenden Verbindung
JP4278080B2 (ja) * 2000-09-27 2009-06-10 富士フイルム株式会社 高感度受光素子及びイメージセンサー
JP4055053B2 (ja) * 2002-03-26 2008-03-05 本田技研工業株式会社 化合物薄膜太陽電池およびその製造方法

Also Published As

Publication number Publication date
EE200500018A (et) 2006-02-15
EE05373B1 (et) 2010-12-15
US20050271827A1 (en) 2005-12-08

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EXFP Utility model extended to 8 or 10 years after payment of fee

Expiry date: 20130607

EXFP Utility model extended to 8 or 10 years after payment of fee

Expiry date: 20150607