EE00584U1 - A method of fabricating a CuInS2 absorber solar cell - Google Patents

A method of fabricating a CuInS2 absorber solar cell

Info

Publication number
EE00584U1
EE00584U1 EEU200500045U EEU200500045U EE00584U1 EE 00584 U1 EE00584 U1 EE 00584U1 EE U200500045 U EEU200500045 U EE U200500045U EE U200500045 U EEU200500045 U EE U200500045U EE 00584 U1 EE00584 U1 EE 00584U1
Authority
EE
Estonia
Prior art keywords
cuins2
fabricating
solar cell
absorber solar
absorber
Prior art date
Application number
EEU200500045U
Other languages
Estonian (et)
Inventor
Krunks Malle
Mere Arvo
Kijatkina Olga
Original Assignee
Tallinna Tehnikaülikool
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tallinna Tehnikaülikool filed Critical Tallinna Tehnikaülikool
Publication of EE00584U1 publication Critical patent/EE00584U1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
EEU200500045U 2004-06-07 2005-06-07 A method of fabricating a CuInS2 absorber solar cell EE00584U1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US57766404P 2004-06-07 2004-06-07

Publications (1)

Publication Number Publication Date
EE00584U1 true EE00584U1 (en) 2006-01-16

Family

ID=35788852

Family Applications (2)

Application Number Title Priority Date Filing Date
EEU200500045U EE00584U1 (en) 2004-06-07 2005-06-07 A method of fabricating a CuInS2 absorber solar cell
EEP200500018A EE05373B1 (en) 2004-06-07 2005-06-07 Method for fabricating a CuInS2 absorber core element

Family Applications After (1)

Application Number Title Priority Date Filing Date
EEP200500018A EE05373B1 (en) 2004-06-07 2005-06-07 Method for fabricating a CuInS2 absorber core element

Country Status (2)

Country Link
US (1) US20050271827A1 (en)
EE (2) EE00584U1 (en)

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EP1684362A3 (en) * 2004-12-02 2006-08-02 Technische Universiteit Delft Process for the production of thin layers, preferably for a photovoltaic cell
AT503837B1 (en) * 2006-06-22 2009-01-15 Isovolta METHOD FOR PRODUCING PHOTOACTIVE LAYERS AND COMPONENTS COMPRISING THIS LAYER (DE)
US20080216885A1 (en) * 2007-03-06 2008-09-11 Sergey Frolov Spectrally adaptive multijunction photovoltaic thin film device and method of producing same
WO2009006910A2 (en) * 2007-07-09 2009-01-15 Tallinn University Of Technology Photovoltaic cell based on zinc oxide nanorods and method for making the same
US20090211622A1 (en) * 2008-02-21 2009-08-27 Sunlight Photonics Inc. Multi-layered electro-optic devices
US20090215215A1 (en) * 2008-02-21 2009-08-27 Sunlight Photonics Inc. Method and apparatus for manufacturing multi-layered electro-optic devices
WO2009111055A1 (en) 2008-03-05 2009-09-11 Global Solar Energy, Inc. Feedback for buffer layer deposition
EP2257970A4 (en) 2008-03-05 2015-09-02 Hanergy Hi Tech Power Hk Ltd Buffer layer deposition for thin-film solar cells
US8951446B2 (en) 2008-03-13 2015-02-10 Battelle Energy Alliance, Llc Hybrid particles and associated methods
US8003070B2 (en) * 2008-03-13 2011-08-23 Battelle Energy Alliance, Llc Methods for forming particles from single source precursors
US9371226B2 (en) 2011-02-02 2016-06-21 Battelle Energy Alliance, Llc Methods for forming particles
US8324414B2 (en) 2009-12-23 2012-12-04 Battelle Energy Alliance, Llc Methods of forming single source precursors, methods of forming polymeric single source precursors, and single source precursors and intermediate products formed by such methods
US10211353B2 (en) * 2008-04-14 2019-02-19 Sunlight Photonics Inc. Aligned bifacial solar modules
US8110428B2 (en) * 2008-11-25 2012-02-07 Sunlight Photonics Inc. Thin-film photovoltaic devices
US8835748B2 (en) 2009-01-06 2014-09-16 Sunlight Photonics Inc. Multi-junction PV module
KR101047980B1 (en) * 2009-02-13 2011-07-13 충남대학교산학협력단 Solar cell with CD thin film with sulfur element vacancy defect by chemical solution growth method
KR101014039B1 (en) 2009-03-31 2011-02-10 엘지이노텍 주식회사 Solar cell and method of fabricating the same
KR101055135B1 (en) 2009-04-01 2011-08-08 엘지이노텍 주식회사 Solar cell
US7838403B1 (en) 2009-09-14 2010-11-23 International Business Machines Corporation Spray pyrolysis for large-scale production of chalcopyrite absorber layer in photovoltaic devices
DE102011004652A1 (en) * 2010-02-26 2011-09-01 Electronics And Telecommunications Research Institute A method for producing a light-absorbing thin film layer and a method using the same for producing a thin-film solar cell
JP5641981B2 (en) * 2010-03-02 2014-12-17 大阪瓦斯株式会社 Photoelectric conversion element that can be manufactured by a method suitable for mass production
CN102893408B (en) 2010-05-13 2016-05-11 第一太阳能有限公司 Photovoltaic device conductive layer
US20120064699A1 (en) * 2010-09-08 2012-03-15 Alion, Inc. Methods and systems for spray pyrolysis with addition of volatile non-polar materials
CN102169910B (en) * 2011-01-14 2013-06-05 南开大学 Thin film solar cell based on sulfur compound nanocrystalline
JP5808562B2 (en) * 2011-04-04 2015-11-10 Tdk株式会社 Solar cell and method for manufacturing solar cell
US8726835B2 (en) * 2011-06-30 2014-05-20 Jiaxiong Wang Chemical bath deposition apparatus for fabrication of semiconductor films
CN102368512B (en) * 2011-11-16 2013-06-19 上海大学 Method for preparing CuInS2 on substrate by utilizing electrochemical and solid vulcanizing method
US9443728B2 (en) * 2013-08-16 2016-09-13 Applied Materials, Inc. Accelerated relaxation of strain-relaxed epitaxial buffers by use of integrated or stand-alone thermal processing

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Publication number Priority date Publication date Assignee Title
US5180686A (en) * 1988-10-31 1993-01-19 Energy Conversion Devices, Inc. Method for continuously deposting a transparent oxide material by chemical pyrolysis
US5501744A (en) * 1992-01-13 1996-03-26 Photon Energy, Inc. Photovoltaic cell having a p-type polycrystalline layer with large crystals
US6387844B1 (en) * 1994-10-31 2002-05-14 Akira Fujishima Titanium dioxide photocatalyst
US6225149B1 (en) * 1999-05-03 2001-05-01 Feng Yuan Gan Methods to fabricate thin film transistors and circuits
DE19956735B4 (en) * 1999-11-25 2008-08-21 Shell Erneuerbare Energien Gmbh A thin film solar cell comprising a chalcopyrite compound and a titanium and oxygen-containing compound
JP4278080B2 (en) * 2000-09-27 2009-06-10 富士フイルム株式会社 High sensitivity light receiving element and image sensor
JP4055053B2 (en) * 2002-03-26 2008-03-05 本田技研工業株式会社 Compound thin film solar cell and manufacturing method thereof

Also Published As

Publication number Publication date
US20050271827A1 (en) 2005-12-08
EE05373B1 (en) 2010-12-15
EE200500018A (en) 2006-02-15

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Legal Events

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EXFP Utility model extended to 8 or 10 years after payment of fee

Expiry date: 20130607

EXFP Utility model extended to 8 or 10 years after payment of fee

Expiry date: 20150607