DK3483310T3 - Apparat til fremstilling af monokrystallinsk silicium og fremgangsmåde til fremstilling af monokrystallinsk silicium - Google Patents

Apparat til fremstilling af monokrystallinsk silicium og fremgangsmåde til fremstilling af monokrystallinsk silicium Download PDF

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Publication number
DK3483310T3
DK3483310T3 DK18205387.6T DK18205387T DK3483310T3 DK 3483310 T3 DK3483310 T3 DK 3483310T3 DK 18205387 T DK18205387 T DK 18205387T DK 3483310 T3 DK3483310 T3 DK 3483310T3
Authority
DK
Denmark
Prior art keywords
monocrystallinic
silicium
making
monocrystallinic silicium
making monocrystallinic
Prior art date
Application number
DK18205387.6T
Other languages
Danish (da)
English (en)
Inventor
Hiroyuki Sagawa
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Application granted granted Critical
Publication of DK3483310T3 publication Critical patent/DK3483310T3/da

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
DK18205387.6T 2017-11-13 2018-11-09 Apparat til fremstilling af monokrystallinsk silicium og fremgangsmåde til fremstilling af monokrystallinsk silicium DK3483310T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017218314A JP6863240B2 (ja) 2017-11-13 2017-11-13 シリコン単結晶の製造装置および製造方法

Publications (1)

Publication Number Publication Date
DK3483310T3 true DK3483310T3 (da) 2020-07-20

Family

ID=64270695

Family Applications (1)

Application Number Title Priority Date Filing Date
DK18205387.6T DK3483310T3 (da) 2017-11-13 2018-11-09 Apparat til fremstilling af monokrystallinsk silicium og fremgangsmåde til fremstilling af monokrystallinsk silicium

Country Status (4)

Country Link
EP (1) EP3483310B1 (fr)
JP (1) JP6863240B2 (fr)
CN (1) CN109778313B (fr)
DK (1) DK3483310T3 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7255468B2 (ja) * 2019-12-06 2023-04-11 株式会社Sumco 誘導加熱コイル及びこれを用いた単結晶製造装置
JP7447784B2 (ja) 2020-12-25 2024-03-12 株式会社Sumco 誘導加熱コイル及びこれを用いた単結晶製造装置
JP2022149310A (ja) * 2021-03-25 2022-10-06 Tdk株式会社 結晶製造方法、結晶製造装置、及び単結晶

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5339057A (en) * 1976-09-22 1978-04-10 Toshiba Corp Production of semiconductor single crystal
JP4521621B2 (ja) * 1999-05-24 2010-08-11 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造方法
DE10216609B4 (de) * 2002-04-15 2005-04-07 Siltronic Ag Verfahren zur Herstellung der Halbleiterscheibe
CN1254565C (zh) * 2002-12-30 2006-05-03 天津市环欧半导体材料技术有限公司 气相掺杂区熔硅单晶的生产方法
CN202072793U (zh) * 2010-12-23 2011-12-14 北京有色金属研究总院 一种用于区熔气相掺杂的高频加热线圈
JP2013177254A (ja) 2012-02-28 2013-09-09 Shin Etsu Handotai Co Ltd Ｆｚ法による単結晶製造装置の誘導加熱コイルの洗浄方法
CN203741451U (zh) * 2014-01-27 2014-07-30 浙江晶盛机电股份有限公司 一种用于区熔炉的气体控制系统
JP6365218B2 (ja) * 2014-10-17 2018-08-01 株式会社Sumco 単結晶の製造方法及び製造装置
CN105177698A (zh) * 2015-10-19 2015-12-23 天津市环欧半导体材料技术有限公司 一种区熔气掺单晶用吹气线圈
JP2017141130A (ja) * 2016-02-09 2017-08-17 信越半導体株式会社 半導体単結晶の製造方法及び半導体単結晶の製造装置

Also Published As

Publication number Publication date
EP3483310A1 (fr) 2019-05-15
EP3483310B1 (fr) 2020-06-10
CN109778313B (zh) 2021-04-02
CN109778313A (zh) 2019-05-21
JP6863240B2 (ja) 2021-04-21
JP2019089668A (ja) 2019-06-13

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