DK2836622T3 - Indretning til kemisk dampudfældning af mikrobølgeplasma - Google Patents

Indretning til kemisk dampudfældning af mikrobølgeplasma Download PDF

Info

Publication number
DK2836622T3
DK2836622T3 DK13721420.1T DK13721420T DK2836622T3 DK 2836622 T3 DK2836622 T3 DK 2836622T3 DK 13721420 T DK13721420 T DK 13721420T DK 2836622 T3 DK2836622 T3 DK 2836622T3
Authority
DK
Denmark
Prior art keywords
chamber
chambers
substrate table
gas
edge
Prior art date
Application number
DK13721420.1T
Other languages
English (en)
Inventor
Devi Shanker Misra
Original Assignee
Iia Tech Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Iia Tech Pte Ltd filed Critical Iia Tech Pte Ltd
Application granted granted Critical
Publication of DK2836622T3 publication Critical patent/DK2836622T3/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/025—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Claims (12)

1. Indretning (50) til dyrkning af diamanter, hvilken indretning omfatter: et eller flere kamre (52), hvor hvert kammer (52) er i fluidforbindelse med et eller flere andre kamre (52), hvor hvert kammer omfatter en eller flere sub-stratbordenheder (32) i kammeret til understøtning af et substratbord (10), hvor substratbordenheden (32) omfatter en plade (35), substratbordet (10) og en perifer reflektor (34); hvor substratbordet (10) og den perifere reflektor (34) understøttes oven på pladen (35), kendetegnet ved, at kamrene (52) er anbragt på række med gasflowrør (56) mellem hvert kammer, eller kamrene er anbragt i et netværk, således at hvert kammer er forbundet med et naboliggende kammer for at muliggøre gasflow mellem kamrene.
2. Indretning ifølge krav 1, hvor kammeret endvidere omfatter en mikrobølgeindretning (37) til tilførsel af mikrobølgeenergi til kammeret (52), hvor mikrobølgeindretningen eventuelt genererer en mikrobølge på 2,45 GHz og leder mikrobølgeenergien ind i vakuumkammeret i substratbordets (10) område til dannelse af et fladtrykt kugleformet plasmaområde (14).
3. Indretning ifølge et af de foregående krav, hvor kammeret har et hus (30), der er indrettet til at rumme substratbordenheden (32) deri.
4. Indretning ifølge det foregående krav, hvor substratbordet (10) omfatter: en i det væsentlige cirkulær plan basisdel (12); en perifert forhøjet kant (13) i forhold til basisdelen, hvorved den perifert forhøjede kant definerer en substratmodtagende overflade (15), der er forsænket i midten, hvor den substratmodtagende overflade, der er forsænket i midten, er i det væsentlige plan, hvor den perifert forhøjede kant (13) i forhold til basisdelen omfatter en indvendig kant (13b) og en udvendig kant (13a), hvor den indvendige kant (13b) har en affasning (24).
5. Indretning ifølge krav 4, hvor den perifert forhøjede kant omfatter en ringformet rille (18a).
6. Indretning ifølge krav 4 eller 5, hvor den perifert forhøjede kant omfatter en øvre overflade (13c) og en nedre overflade (13d), og den perifert forhøjede kant omfatter en ringformet rille (18a, 18b) i mindst en af den øvre og nedre overflade.
7. Indretning ifølge et af kravene 4 til 6, hvor den perifere reflektor (34) omfatter et cylindrisk legeme omkring substratbordet (10), og den perifere reflektor er anbragt med afstand lateralt fra den perifert forhøjede kant (13) af substratbordet (10).
8. Indretning ifølge et af kravene 4 til 7, hvor affasningen (24) definerer en øvre skarp kant og en nedre skarp kant, hvor den øvre skarpe kant og den nedre skarpe kant sammen bidrager til at definere et plasmaområde i anvendelse.
9. Indretning ifølge et af kravene 4 til 8, hvor substratbordet (10) er fremstillet af molybdæn.
10. Indretning ifølge et af kravene 4 til 9, hvor substratbordets (10) ydre periferi er isoleret fra substratbordenhedens (32) hovedmasse af de ringformede eller spalteformede riller, der fortrinsvis både er på top- og bundfladen af substratbordet.
11. Indretning ifølge et af kravene 1 til 10, endvidere omfattende et eller flere af: en gastilførsel, der er anbragt før indretningens (52a) første kammer og er indrettet til at tilføre gasser til dannelse af diamanter i kamrene (52); en vakuumpumpe (58), der er anbragt efter indretningens sidste kammer (52g) og er indrettet til at evakuere alle kamrene og suge procesgasser gennem rækken af kamre fra gasindgangen til det første kammer; et målemiddel, der er fastgjort på hvert af indretningens kamre og indrettet til at måle gaskvalitetsforholdet i kammeret; og et trykmålemiddel (60), der er fastgjort på hvert af indretningens kamre og indrettet til at måle trykket i kammeret.
12. Fremgangsmåde til dyrkning af diamanter, omfattende: at tilvejebringe en indretning (50) ifølge et af kravene 1 til 11; at generere vakuum i kamrene (52); at tilføre gasser til kamrene, således at gassens renhed forbedres, når den passerer gennem hvert kammer; at måle trykket i kamrene; at måle gaskvalitetsforholdet i kamrene; at formulere sammensætningen af gasserne, således at der dyrkes diamanter i hvert kammer med en lignende vækstrate.
DK13721420.1T 2012-04-12 2013-04-12 Indretning til kemisk dampudfældning af mikrobølgeplasma DK2836622T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/445,070 US20130272928A1 (en) 2012-04-12 2012-04-12 Apparatus for the deposition of diamonds by microwave plasma chemical vapour deposition process and substrate stage used therein
PCT/SG2013/000144 WO2013154504A2 (en) 2012-04-12 2013-04-12 Apparatus for the growing diamonds by microwave plasma chemical vapour deposition process and substrate stage used therein

Publications (1)

Publication Number Publication Date
DK2836622T3 true DK2836622T3 (da) 2017-12-11

Family

ID=48326381

Family Applications (1)

Application Number Title Priority Date Filing Date
DK13721420.1T DK2836622T3 (da) 2012-04-12 2013-04-12 Indretning til kemisk dampudfældning af mikrobølgeplasma

Country Status (10)

Country Link
US (2) US20130272928A1 (da)
EP (1) EP2836622B1 (da)
JP (1) JP6046237B2 (da)
KR (1) KR101722478B1 (da)
CN (1) CN104321461B (da)
DK (1) DK2836622T3 (da)
ES (1) ES2652129T3 (da)
PT (1) PT2836622T (da)
SG (1) SG11201406391YA (da)
WO (1) WO2013154504A2 (da)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014185382A (ja) * 2013-03-25 2014-10-02 Atsumi Tec:Kk ナノ粒子の分別装置
SG10201506020UA (en) * 2014-08-19 2016-03-30 Silcotek Corp Chemical vapor deposition system, arrangement of chemical vapor deposition systems, and chemical vapor deposition method
CN107075916B (zh) 2014-12-22 2019-11-08 哈里伯顿能源服务公司 热稳定多晶硬质材料与钎焊材料之间的化学强化粘结
SG10201505413VA (en) * 2015-01-14 2016-08-30 Iia Technologies Pte Ltd Electronic device grade single crystal diamonds and method of producing the same
US11469077B2 (en) 2018-04-24 2022-10-11 FD3M, Inc. Microwave plasma chemical vapor deposition device and application thereof
EP3794631A4 (en) * 2018-05-18 2022-02-23 Board of Trustees of Michigan State University PROCESS FOR MANUFACTURING LARGE-SCALE DIAMOND SUBSTRATES
CN108624870B (zh) * 2018-07-05 2023-07-28 成都纽曼和瑞微波技术有限公司 一种可调谐圆抛腔式高功率微波等离子体化学气相沉积装置
CN111663179A (zh) * 2019-03-05 2020-09-15 中国科学院物理研究所 用于单晶金刚石生长的晶种托
CN110735130B (zh) * 2019-11-13 2021-11-26 湖南红太阳光电科技有限公司 制备背面钝化膜的管式pecvd设备及方法
CN111020699A (zh) * 2019-12-12 2020-04-17 上海征世科技有限公司 一种提高微波等离子体生长单晶钻石生长速度的基片台
CN111962048B (zh) * 2020-07-16 2021-08-20 上海征世科技股份有限公司 一种微波等离子体设备用的基片台及设备
KR102532228B1 (ko) * 2021-08-11 2023-05-15 중앙대학교 산학협력단 에칭과 화학기상증착에 의한 재성장을 이용한 계층적 다이아몬드 구조 제작방법 및 그 다이아몬드 구조를 갖는 방열소재
WO2023240026A1 (en) * 2022-06-06 2023-12-14 Plasmability, LLC. Multiple chamber system for plasma chemical vapor deposition of diamond and related materials

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3030187A (en) 1958-07-23 1962-04-17 Union Carbide Corp Synthesis of diamond
JPS5764922A (en) * 1980-10-07 1982-04-20 Mitsubishi Electric Corp Apparatus for forming amorphous thin film
US4466380A (en) * 1983-01-10 1984-08-21 Xerox Corporation Plasma deposition apparatus for photoconductive drums
JPS59166238A (ja) * 1983-03-10 1984-09-19 Toshiba Corp 薄膜形成装置
US5174881A (en) * 1988-05-12 1992-12-29 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming a thin film on surface of semiconductor substrate
JPH02137796A (ja) 1988-11-16 1990-05-28 Fujitsu Ltd ダイヤモンドの気相合成方法
JPH0339480A (ja) * 1989-07-05 1991-02-20 Sony Corp Ｅｃｒプラズマ装置
US5087478A (en) 1989-08-01 1992-02-11 Hughes Aircraft Company Deposition method and apparatus using plasma discharge
US5855687A (en) * 1990-12-05 1999-01-05 Applied Materials, Inc. Substrate support shield in wafer processing reactors
SE502094C2 (sv) 1991-08-16 1995-08-14 Sandvik Ab Metod för diamantbeläggning med mikrovågsplasma
US5679159A (en) * 1995-06-07 1997-10-21 Saint-Gobain/Norton Industrial Ceramics Corporation Spinning substrate holder for cutting tool inserts for improved arc-jet diamond deposition
JP3041844B2 (ja) * 1995-08-11 2000-05-15 住友電気工業株式会社 成膜又はエッチング装置
JP2002194549A (ja) * 2000-12-28 2002-07-10 Sony Corp 成膜装置及び成膜方法
JP2004244298A (ja) * 2002-12-17 2004-09-02 Kobe Steel Ltd ダイヤモンド気相合成用基板ホルダ及びダイヤモンド気相合成方法
DE10261362B8 (de) * 2002-12-30 2008-08-28 Osram Opto Semiconductors Gmbh Substrat-Halter
US7024105B2 (en) * 2003-10-10 2006-04-04 Applied Materials Inc. Substrate heater assembly
JP4366500B2 (ja) * 2004-02-12 2009-11-18 独立行政法人産業技術総合研究所 マイクロ波プラズマｃｖｄ装置の基板支持体
US7611322B2 (en) * 2004-11-18 2009-11-03 Intevac, Inc. Processing thin wafers
JP4729741B2 (ja) * 2006-01-20 2011-07-20 独立行政法人産業技術総合研究所 ダイヤモンド製造方法
US20070256934A1 (en) * 2006-05-08 2007-11-08 Perata Michael R Apparatus and Method for Coating Substrates With Approximate Process Isolation
US7776408B2 (en) * 2007-02-14 2010-08-17 Rajneesh Bhandari Method and apparatus for producing single crystalline diamonds
WO2009114130A2 (en) * 2008-03-13 2009-09-17 Michigan State University Process and apparatus for diamond synthesis
US8062470B2 (en) * 2008-05-12 2011-11-22 Yuri Glukhoy Method and apparatus for application of thin coatings from plasma onto inner surfaces of hollow containers
US8252112B2 (en) * 2008-09-12 2012-08-28 Ovshinsky Innovation, Llc High speed thin film deposition via pre-selected intermediate
KR20100129566A (ko) * 2009-06-01 2010-12-09 주식회사 유진테크 기판지지유닛 및 이를 포함하는 기판처리장치
KR20110136583A (ko) * 2010-06-15 2011-12-21 삼성엘이디 주식회사 서셉터 및 이를 구비하는 화학 기상 증착 장치
US20120058630A1 (en) * 2010-09-08 2012-03-08 Veeco Instruments Inc. Linear Cluster Deposition System
SG179318A1 (en) * 2010-09-27 2012-04-27 Gemesis Company S Pte Ltd Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system
EP2707521B1 (en) * 2011-05-13 2018-08-08 Board Of Trustees Of Michigan State University Improved microwave plasma reactors

Also Published As

Publication number Publication date
KR20150020537A (ko) 2015-02-26
ES2652129T3 (es) 2018-01-31
JP2015518088A (ja) 2015-06-25
US10184192B2 (en) 2019-01-22
WO2013154504A2 (en) 2013-10-17
US20150059647A1 (en) 2015-03-05
WO2013154504A3 (en) 2014-08-28
EP2836622A2 (en) 2015-02-18
SG11201406391YA (en) 2014-11-27
CN104321461A (zh) 2015-01-28
EP2836622B1 (en) 2017-09-27
KR101722478B1 (ko) 2017-04-03
PT2836622T (pt) 2017-12-21
CN104321461B (zh) 2017-03-15
US20130272928A1 (en) 2013-10-17
JP6046237B2 (ja) 2016-12-14

Similar Documents

Publication Publication Date Title
EP2836622B1 (en) Microwave plasma chemical vapour deposition apparatus
JP2021001115A (ja) 大面積高光学的特性型合成多結晶ダイヤモンド窓
US10407770B2 (en) Large area optical quality synthetic polycrystalline diamond window
US9478938B2 (en) Thick polycrystalline synthetic diamond wafers for heat spreading applications and microwave plasma chemical vapour depositon synthesis techniques
JP3208792B2 (ja) ダイヤモンドの製造法及び装置
Kuo et al. An experimental study of high pressure synthesis of diamond films using a microwave cavity plasma reactor
WO2008099422A3 (en) Method and apparatus for producing single crystalline diamonds
WO2022111181A1 (zh) 一种微波等离子体化学气相沉积装置及其真空反应室
Tachibana et al. Diamond films grown by a 60-kW microwave plasma chemical vapor deposition system
GB2497671A (en) Large area optical quality synthetic polycrystalline diamond window
Liu et al. Demonstration of a novel high-power MPCVD reactor using combined TM01 and TM02 modes for efficient diamond growth
CN113088937A (zh) 一种提高稳定性微波等离子体cvd制备单晶金刚石装置及单晶金刚石制备方法
Nasieka et al. Difference in the structure and morphology of CVD diamond films grown on negatively charged and grounded substrate holders: Optical study
Radishev et al. Study of grown single crystal diamond by optical and X-ray spectroscopy
US11873224B2 (en) Polycrystalline chemical vapour deposition synthetic diamond material
TWI771779B (zh) 鑽石製造設備、應用其之鑽石製造方法、以及鑽石檢測方法
RU2575205C1 (ru) Монокристаллический, полученный хогф, синтетический алмазный материал
CN1032768C (zh) 微波法低温沉积细晶粒金刚石薄膜
JPH075432B2 (ja) ダイヤモンドの気相合成法
Sergeichev et al. Polycrystal diamond growth in a microwave plasma torch
US20230392255A1 (en) Multiple Chamber System for Plasma Chemical Vapor Deposition of Diamond and Related Materials
Pearce Microwave deposition of Diamond on Silicon
Nayak et al. Photoluminescence spectroscopic investigation on the quality of diamond films grown in oxy-acetylene combustion flame
Hirai et al. Effect of water contained in acetone on nanocrystalline diamond particles or film synthesis
Musale Studies on the effect of incorporation of some selected impurities on the growth and properties of diamond films