DK2594659T3 - Fremgangsmåde til udførelse af en PCVD-pådampningsproces - Google Patents
Fremgangsmåde til udførelse af en PCVD-pådampningsproces Download PDFInfo
- Publication number
- DK2594659T3 DK2594659T3 DK12192965.7T DK12192965T DK2594659T3 DK 2594659 T3 DK2594659 T3 DK 2594659T3 DK 12192965 T DK12192965 T DK 12192965T DK 2594659 T3 DK2594659 T3 DK 2594659T3
- Authority
- DK
- Denmark
- Prior art keywords
- plasma
- substrate tube
- reactive gas
- glass
- tube
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/01413—Reactant delivery systems
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1415—Reactant delivery systems
- C03B19/1423—Reactant deposition burners
- C03B19/143—Plasma vapour deposition
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
- C03B37/01807—Reactant delivery systems, e.g. reactant deposition burners
- C03B37/01815—Reactant deposition burners or deposition heating means
- C03B37/01823—Plasma deposition burners or heating means
- C03B37/0183—Plasma deposition burners or heating means for plasma within a tube substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2207/00—Glass deposition burners
- C03B2207/36—Fuel or oxidant details, e.g. flow rate, flow rate ratio, fuel additives
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2207/00—Glass deposition burners
- C03B2207/60—Relationship between burner and deposit, e.g. position
- C03B2207/66—Relative motion
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2207/00—Glass deposition burners
- C03B2207/70—Control measures
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacture, Treatment Of Glass Fibers (AREA)
- Chemical Vapour Deposition (AREA)
Claims (8)
1. Fremgangsmåde til udførelse af en PCVD-pådampningsproces, idet fremgangsmåden omfatter trinene: i) at tilvejebringe et glassubstratrør; ii) at tilføre en eller flere glasdannende gasser til substratrøret ifølge trin i); iii) at inducere en plasma ved hjælp af mikrobølgestråling på mindst en del af substratrøret ifølge trin ii) for at inducere pådampning af et eller flere glaslag på substratrørets indvendige flade; hvor mindst en plasma-reaktiv gas tilføres substratrøret under trin iii) i en eller flere impulser som en funktion af plasmaens aksiale position langs substratrørets længde, og kendetegnet v e d, at der tilvejebringes mindst multiple impulser af plasma-reaktiv gas, og hvor de multiple impulser af plasma-reaktiv gas tilføres med bestemte langsgående intervaller langs substratrørets længde på millimetre svarende til et eller et ulige multipel af en halv bølgelængde af mikrobølgerne ifølge trin ii).
2. Fremgangsmåde ifølge krav 1, hvor mikrobølgebølgelængden er tolv centimeter, og hvor impulsintervallet er seks centimeter.
3. Fremgangsmåde ifølge ethvert af de foregående krav, hvor varigheden af en impuls er imellem 1 og 100 millisekunder.
4. Fremgangsmåde ifølge ethvert af de foregående krav, hvor varigheden af en impuls er imellem 25 og 75 millisekunder.
5. Fremgangsmåde ifølge ethvert af de foregående krav, hvor den plasmareaktive gas’ tryk er imellem 0,5 og 5 bar.
6. Fremgangsmåde ifølge ethvert af de foregående krav, hvor den plasmareaktive gas’ tryk er imellem 1 og 2 bar.
7. Fremgangsmåde ifølge ethvert af de foregående krav, hvor den plasmareaktive gas’ tryk er 1,5 bar.
8. Fremgangsmåde ifølge ethvert af de foregående krav, hvor den plasmareaktive gas er valgt fra gruppen bestående af argon, helium, oxygen, nitrogen og en eller flere kombinationer deraf.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL2007831A NL2007831C2 (en) | 2011-11-21 | 2011-11-21 | Apparatus and method for carrying out a pcvd deposition process. |
Publications (1)
Publication Number | Publication Date |
---|---|
DK2594659T3 true DK2594659T3 (da) | 2015-02-16 |
Family
ID=47191617
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK14184932.3T DK2816137T3 (da) | 2011-11-21 | 2012-11-16 | Fremgangsmåde til udførelse af en PCVD-pådampningsproces |
DK12192965.7T DK2594659T3 (da) | 2011-11-21 | 2012-11-16 | Fremgangsmåde til udførelse af en PCVD-pådampningsproces |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK14184932.3T DK2816137T3 (da) | 2011-11-21 | 2012-11-16 | Fremgangsmåde til udførelse af en PCVD-pådampningsproces |
Country Status (8)
Country | Link |
---|---|
US (1) | US9067816B2 (da) |
EP (2) | EP2816137B1 (da) |
JP (1) | JP6129522B2 (da) |
CN (2) | CN107265841B (da) |
BR (1) | BR102012029370B1 (da) |
DK (2) | DK2816137T3 (da) |
NL (1) | NL2007831C2 (da) |
PL (1) | PL2816137T3 (da) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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NL2007447C2 (nl) * | 2011-09-20 | 2013-03-21 | Draka Comteq Bv | Werkwijze voor de vervaardiging van een primaire voorvorm voor optische vezels, primaire voorvorm, uiteindelijke voorvorm, optische vezel. |
NL2007831C2 (en) | 2011-11-21 | 2013-05-23 | Draka Comteq Bv | Apparatus and method for carrying out a pcvd deposition process. |
WO2013160714A1 (en) | 2012-04-27 | 2013-10-31 | Draka Comteq Bv | Hybrid single and multimode optical fiber for a home network |
US9188754B1 (en) | 2013-03-15 | 2015-11-17 | Draka Comteq, B.V. | Method for manufacturing an optical-fiber buffer tube |
JP6298893B2 (ja) * | 2013-12-20 | 2018-03-20 | ドラカ・コムテツク・ベー・ベー | 損失低下を示す、台形コアを有するシングルモードファイバ |
NL2012857B1 (en) * | 2014-05-22 | 2016-03-07 | Draka Comteq Bv | Apparatus and method for carrying out a plasma deposition process. |
US11365481B2 (en) * | 2015-10-06 | 2022-06-21 | City University Of Hong Kong | Homogeneous and transparent protective coatings for precious metals and copper alloys |
NL2017575B1 (en) * | 2016-10-04 | 2018-04-13 | Draka Comteq Bv | A method and an apparatus for performing a plasma chemical vapour deposition process and a method |
DK3729151T3 (da) | 2017-12-21 | 2022-07-11 | Draka Comteq France | Singlemodefiber, som er ufølsom over for bøjningstab, med en lav rende og tilsvarende optisk system |
CN112408775B (zh) * | 2020-11-13 | 2022-10-18 | 烽火通信科技股份有限公司 | 一种光纤预制棒制造设备 |
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-
2011
- 2011-11-21 NL NL2007831A patent/NL2007831C2/en active
-
2012
- 2012-11-16 DK DK14184932.3T patent/DK2816137T3/da active
- 2012-11-16 PL PL14184932T patent/PL2816137T3/pl unknown
- 2012-11-16 EP EP14184932.3A patent/EP2816137B1/en active Active
- 2012-11-16 DK DK12192965.7T patent/DK2594659T3/da active
- 2012-11-16 EP EP12192965.7A patent/EP2594659B1/en active Active
- 2012-11-19 JP JP2012252922A patent/JP6129522B2/ja active Active
- 2012-11-19 BR BR102012029370-6A patent/BR102012029370B1/pt active IP Right Grant
- 2012-11-21 CN CN201710579782.2A patent/CN107265841B/zh active Active
- 2012-11-21 CN CN201210477438.XA patent/CN103130411B/zh active Active
- 2012-11-21 US US13/683,555 patent/US9067816B2/en active Active
Also Published As
Publication number | Publication date |
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JP2013107820A (ja) | 2013-06-06 |
CN103130411A (zh) | 2013-06-05 |
CN107265841B (zh) | 2020-11-10 |
EP2816137A1 (en) | 2014-12-24 |
EP2816137B1 (en) | 2019-08-21 |
EP2594659A1 (en) | 2013-05-22 |
BR102012029370A2 (pt) | 2014-03-25 |
US9067816B2 (en) | 2015-06-30 |
DK2816137T3 (da) | 2019-10-07 |
EP2594659B1 (en) | 2015-01-07 |
PL2816137T3 (pl) | 2019-12-31 |
CN103130411B (zh) | 2017-07-14 |
US20130167593A1 (en) | 2013-07-04 |
NL2007831C2 (en) | 2013-05-23 |
JP6129522B2 (ja) | 2017-05-17 |
CN107265841A (zh) | 2017-10-20 |
BR102012029370B1 (pt) | 2020-12-08 |
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