DK139798C - Thyristor med monolitisk integreret diode og fremgangsmaade til fremstilling deraf - Google Patents
Thyristor med monolitisk integreret diode og fremgangsmaade til fremstilling derafInfo
- Publication number
- DK139798C DK139798C DK611774A DK611774A DK139798C DK 139798 C DK139798 C DK 139798C DK 611774 A DK611774 A DK 611774A DK 611774 A DK611774 A DK 611774A DK 139798 C DK139798 C DK 139798C
- Authority
- DK
- Denmark
- Prior art keywords
- monolitic
- thyristor
- manufacture
- integrated diode
- diode
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/135—Thyristors having built-in components the built-in components being diodes
- H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732360081 DE2360081C3 (de) | 1973-12-03 | Thyristor mit monolithisch integrierter Diode und Verfahren zu seiner Herstellung |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DK611774A DK611774A (enExample) | 1975-07-28 |
| DK139798B DK139798B (da) | 1979-04-17 |
| DK139798C true DK139798C (da) | 1979-09-17 |
Family
ID=5899690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK611774A DK139798C (da) | 1973-12-03 | 1974-11-25 | Thyristor med monolitisk integreret diode og fremgangsmaade til fremstilling deraf |
Country Status (6)
| Country | Link |
|---|---|
| AT (1) | AT361043B (enExample) |
| DK (1) | DK139798C (enExample) |
| FI (1) | FI61773C (enExample) |
| FR (1) | FR2253285B1 (enExample) |
| GB (1) | GB1495295A (enExample) |
| IT (1) | IT1030860B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2451106A1 (fr) * | 1979-03-09 | 1980-10-03 | Thomson Csf | Dispositif semi-conducteur de commutation a frequence elevee |
| DE3004681A1 (de) * | 1980-02-08 | 1981-08-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Integrierte schaltungsanordnung mit einer diode |
| FR2514558A1 (fr) * | 1981-10-13 | 1983-04-15 | Silicium Semiconducteur Ssc | Procede de fabrication de thyristor asymetrique a diode de conduction inverse par diffusion au phosphure de gallium |
| FR2574594B1 (fr) * | 1984-12-11 | 1987-01-16 | Silicium Semiconducteur Ssc | Structure integree de triac a commande par diac |
| GB2256744A (en) * | 1991-06-11 | 1992-12-16 | Texas Instruments Ltd | A monolithic semiconductor component for transient voltage suppression |
| GB2256743A (en) * | 1991-06-11 | 1992-12-16 | Texas Instruments Ltd | A semiconductor component for transient voltage limiting |
| JPH05152564A (ja) * | 1991-12-02 | 1993-06-18 | Mitsubishi Electric Corp | 逆導通ゲートターンオフサイリスタおよびその製造方法 |
-
1974
- 1974-11-25 DK DK611774A patent/DK139798C/da active
- 1974-12-02 AT AT962674A patent/AT361043B/de not_active IP Right Cessation
- 1974-12-02 IT IT30084/74A patent/IT1030860B/it active
- 1974-12-02 FI FI3488/74A patent/FI61773C/fi active
- 1974-12-03 FR FR7439527A patent/FR2253285B1/fr not_active Expired
- 1974-12-03 GB GB52228/74A patent/GB1495295A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2360081B2 (de) | 1977-04-28 |
| FR2253285A1 (enExample) | 1975-06-27 |
| DE2360081A1 (de) | 1975-06-12 |
| GB1495295A (en) | 1977-12-14 |
| FI61773B (fi) | 1982-05-31 |
| IT1030860B (it) | 1979-04-10 |
| ATA962674A (de) | 1980-07-15 |
| FR2253285B1 (enExample) | 1979-07-27 |
| FI348874A7 (enExample) | 1975-06-04 |
| FI61773C (fi) | 1982-09-10 |
| AT361043B (de) | 1981-02-10 |
| DK611774A (enExample) | 1975-07-28 |
| DK139798B (da) | 1979-04-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IT1025054B (it) | Dispositivo semiconduttore stabilizzato e metodo di fabbricazione dello stesso | |
| SE381535B (sv) | Halvledarstruktur och forfarande for dess framstellning | |
| BG22857A3 (bg) | Метод за получаване на халогенхидрат | |
| BG20773A3 (bg) | Метод за получаване на плевромутилини | |
| FI55477B (fi) | Kapsylaemne avsett foer applicering pao en med gaengad hals foersedd flaska | |
| IT1018223B (it) | Dispositivo per l esecuzione di tecniche di doppia immunodiffusio ne ed immunodiffusione radiale | |
| IT1028325B (it) | Transistore bipolare e metodo di fabbricazione dello stesso | |
| IT974780B (it) | Additivi per cemento espansivo e procedimento per la fabbricazione dei medesimi | |
| NL161301B (nl) | Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan. | |
| FI53686C (fi) | Avtappningspip med luftpassage | |
| IT964002B (it) | Soluzioni di copolimeri di n vinilpirrolidone | |
| BG26809A3 (bg) | Метод за получаване на карбамид | |
| DK139798C (da) | Thyristor med monolitisk integreret diode og fremgangsmaade til fremstilling deraf | |
| BG26667A3 (bg) | Метод за получаване на лактами | |
| SE7510223L (sv) | Polymerisat av olefiniska nitriler | |
| TR16960A (tr) | Fungisid ve akarisid olarak mueessir mahlul huelasalari | |
| SU447885A3 (ru) | Способ получения -каротина | |
| AT315658B (de) | Spike | |
| IT966124B (it) | Circuito integrato monolitico e metodo per produrlo | |
| SU437305A3 (ru) | Способ получения прозрачных полиамидов | |
| IT1041459B (it) | Copolimeri di coloranti e di acrolamide | |
| IT1009508B (it) | Metodo di attivazione di cataliz zatori | |
| IT958652B (it) | Coloranti e miscugli di coloranti chinoftalonici bromurat | |
| SE412258B (sv) | Martensitiskt stalalster samt forfarande for dess framstellning | |
| IT975085B (it) | Procedimento per la fabbricazione di corpi stampati di elevata du rezza di nitruro di silicio e di ossinitruro di silicio |