FI348874A7 - - Google Patents
Info
- Publication number
- FI348874A7 FI348874A7 FI3488/74A FI348874A FI348874A7 FI 348874 A7 FI348874 A7 FI 348874A7 FI 3488/74 A FI3488/74 A FI 3488/74A FI 348874 A FI348874 A FI 348874A FI 348874 A7 FI348874 A7 FI 348874A7
- Authority
- FI
- Finland
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/135—Thyristors having built-in components the built-in components being diodes
- H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2360081 | 1973-12-03 | ||
| DE19732360081 DE2360081C3 (de) | 1973-12-03 | Thyristor mit monolithisch integrierter Diode und Verfahren zu seiner Herstellung |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI348874A7 true FI348874A7 (enExample) | 1975-06-04 |
| FI61773B FI61773B (fi) | 1982-05-31 |
| FI61773C FI61773C (fi) | 1982-09-10 |
Family
ID=5899690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI3488/74A FI61773C (fi) | 1973-12-03 | 1974-12-02 | Tyristor med monolitiskt integrerad diod och foerfarande foer dess framstaellning |
Country Status (6)
| Country | Link |
|---|---|
| AT (1) | AT361043B (enExample) |
| DK (1) | DK139798C (enExample) |
| FI (1) | FI61773C (enExample) |
| FR (1) | FR2253285B1 (enExample) |
| GB (1) | GB1495295A (enExample) |
| IT (1) | IT1030860B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2451106A1 (fr) * | 1979-03-09 | 1980-10-03 | Thomson Csf | Dispositif semi-conducteur de commutation a frequence elevee |
| DE3004681A1 (de) * | 1980-02-08 | 1981-08-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Integrierte schaltungsanordnung mit einer diode |
| FR2514558A1 (fr) * | 1981-10-13 | 1983-04-15 | Silicium Semiconducteur Ssc | Procede de fabrication de thyristor asymetrique a diode de conduction inverse par diffusion au phosphure de gallium |
| FR2574594B1 (fr) * | 1984-12-11 | 1987-01-16 | Silicium Semiconducteur Ssc | Structure integree de triac a commande par diac |
| GB2256744A (en) * | 1991-06-11 | 1992-12-16 | Texas Instruments Ltd | A monolithic semiconductor component for transient voltage suppression |
| GB2256743A (en) * | 1991-06-11 | 1992-12-16 | Texas Instruments Ltd | A semiconductor component for transient voltage limiting |
| JPH05152564A (ja) * | 1991-12-02 | 1993-06-18 | Mitsubishi Electric Corp | 逆導通ゲートターンオフサイリスタおよびその製造方法 |
-
1974
- 1974-11-25 DK DK611774A patent/DK139798C/da active
- 1974-12-02 AT AT962674A patent/AT361043B/de not_active IP Right Cessation
- 1974-12-02 IT IT30084/74A patent/IT1030860B/it active
- 1974-12-02 FI FI3488/74A patent/FI61773C/fi active
- 1974-12-03 FR FR7439527A patent/FR2253285B1/fr not_active Expired
- 1974-12-03 GB GB52228/74A patent/GB1495295A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2360081B2 (de) | 1977-04-28 |
| FR2253285A1 (enExample) | 1975-06-27 |
| DE2360081A1 (de) | 1975-06-12 |
| GB1495295A (en) | 1977-12-14 |
| FI61773B (fi) | 1982-05-31 |
| IT1030860B (it) | 1979-04-10 |
| ATA962674A (de) | 1980-07-15 |
| FR2253285B1 (enExample) | 1979-07-27 |
| DK139798C (da) | 1979-09-17 |
| FI61773C (fi) | 1982-09-10 |
| AT361043B (de) | 1981-02-10 |
| DK611774A (enExample) | 1975-07-28 |
| DK139798B (da) | 1979-04-17 |