DK1350863T3 - Anordning og fremgangsmåde til retningsbestemt påföring af deponeringsmateriale på et substrat - Google Patents
Anordning og fremgangsmåde til retningsbestemt påföring af deponeringsmateriale på et substratInfo
- Publication number
- DK1350863T3 DK1350863T3 DK02006164T DK02006164T DK1350863T3 DK 1350863 T3 DK1350863 T3 DK 1350863T3 DK 02006164 T DK02006164 T DK 02006164T DK 02006164 T DK02006164 T DK 02006164T DK 1350863 T3 DK1350863 T3 DK 1350863T3
- Authority
- DK
- Denmark
- Prior art keywords
- deposition material
- substrate
- filter
- angle
- directional application
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
- C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02006164A EP1350863B1 (de) | 2002-03-19 | 2002-03-19 | Vorrichtung und Verfahren zum gerichteten Aufbringen von Depositionsmaterial auf ein Substrat |
Publications (1)
Publication Number | Publication Date |
---|---|
DK1350863T3 true DK1350863T3 (da) | 2006-11-27 |
Family
ID=27838020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK02006164T DK1350863T3 (da) | 2002-03-19 | 2002-03-19 | Anordning og fremgangsmåde til retningsbestemt påföring af deponeringsmateriale på et substrat |
Country Status (11)
Country | Link |
---|---|
US (1) | US7300557B2 (da) |
EP (2) | EP1350863B1 (da) |
JP (1) | JP2005530919A (da) |
KR (1) | KR20050000372A (da) |
AT (1) | ATE335868T1 (da) |
AU (1) | AU2003218793A1 (da) |
DE (1) | DE50207784D1 (da) |
DK (1) | DK1350863T3 (da) |
ES (1) | ES2269541T3 (da) |
PT (1) | PT1350863E (da) |
WO (1) | WO2003078677A2 (da) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI265202B (en) * | 2005-03-02 | 2006-11-01 | Asia Optical Co Inc | Tool and device for dedicate coating a photochemical film on a substrate |
DE102005014160A1 (de) * | 2005-03-29 | 2006-10-12 | Siemens Ag | Verfahren zum Herstellen eines polykristallinen Keramikfilms auf einem Substrat, Kondensatorstruktur mit dem Keramikfilm und Verwendung der Kondensatorstruktur |
DE102006003847B4 (de) * | 2006-01-26 | 2011-08-18 | Siemens AG, 80333 | Verfahren und Vorrichtung zum Herstellen eines polykristallinen Keramikfilms auf einem Substrat |
JP2009235429A (ja) * | 2008-03-25 | 2009-10-15 | Iwate Univ | スパッタ装置 |
US9567666B2 (en) | 2009-01-12 | 2017-02-14 | Guardian Industries Corp | Apparatus and method for making sputtered films with reduced stress asymmetry |
JP5935045B2 (ja) | 2011-03-29 | 2016-06-15 | パナソニックIpマネジメント株式会社 | 成膜装置および成膜方法 |
WO2015199638A1 (en) * | 2014-06-23 | 2015-12-30 | Applied Materials, Inc. | Method of depositing a layer, method of manufacturing a transistor, layer stack for an electronic device, and an electronic device |
US10541663B2 (en) * | 2015-10-14 | 2020-01-21 | Qorvo Us, Inc. | Multi-stage deposition system for growth of inclined c-axis piezoelectric material structures |
US10571437B2 (en) | 2015-12-15 | 2020-02-25 | Qorvo Us, Inc. | Temperature compensation and operational configuration for bulk acoustic wave resonator devices |
DE102017115153A1 (de) * | 2017-07-06 | 2019-01-10 | VON ARDENNE Asset GmbH & Co. KG | Beschichtungsanordnung und Verfahren |
US11824511B2 (en) | 2018-03-21 | 2023-11-21 | Qorvo Us, Inc. | Method for manufacturing piezoelectric bulk layers with tilted c-axis orientation |
US11401601B2 (en) | 2019-09-13 | 2022-08-02 | Qorvo Us, Inc. | Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same |
JP2023015523A (ja) * | 2021-07-20 | 2023-02-01 | 東京エレクトロン株式会社 | 半導体製造装置、条件補正方法、プログラム |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3627569A (en) * | 1968-12-27 | 1971-12-14 | Bell Telephone Labor Inc | Deposition of thin films with controlled thickness and planar area profile |
US4776868A (en) * | 1985-09-09 | 1988-10-11 | Corning Glass Works | Lenses and lens arrays |
CA2061119C (en) * | 1991-04-19 | 1998-02-03 | Pei-Ing P. Lee | Method of depositing conductors in high aspect ratio apertures |
US5344352A (en) * | 1992-04-02 | 1994-09-06 | U.S. Philips Corporation | Method of manufacturing a pointed electrode, and device for using said method |
FR2698093B1 (fr) * | 1992-11-17 | 1995-01-27 | Saint Gobain Vitrage Int | Vitrage à propriétés de transmission variant avec l'incidence. |
US5415753A (en) * | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
JPH07113172A (ja) * | 1993-10-14 | 1995-05-02 | Sony Corp | 薄膜加工用コリメーター、薄膜加工装置、薄膜加工方法並びに半導体装置の配線形成方法 |
JP3419899B2 (ja) * | 1994-07-26 | 2003-06-23 | 東京エレクトロン株式会社 | スパッタリング方法及びスパッタリング装置 |
US5527438A (en) * | 1994-12-16 | 1996-06-18 | Applied Materials, Inc. | Cylindrical sputtering shield |
US5643428A (en) * | 1995-02-01 | 1997-07-01 | Advanced Micro Devices, Inc. | Multiple tier collimator system for enhanced step coverage and uniformity |
JPH08260139A (ja) * | 1995-03-23 | 1996-10-08 | Sony Corp | 成膜用コリメータ、成膜装置及び電子装置の製造方法 |
US5885425A (en) * | 1995-06-06 | 1999-03-23 | International Business Machines Corporation | Method for selective material deposition on one side of raised or recessed features |
JPH10121234A (ja) * | 1996-10-21 | 1998-05-12 | Ricoh Co Ltd | スパッタリング装置及びそれに用いるコリメータ |
US6168832B1 (en) * | 1997-01-20 | 2001-01-02 | Coherent, Inc. | Three-dimensional masking method for control of coating thickness |
US6365010B1 (en) * | 1998-11-06 | 2002-04-02 | Scivac | Sputtering apparatus and process for high rate coatings |
US6210540B1 (en) * | 2000-03-03 | 2001-04-03 | Optical Coating Laboratory, Inc. | Method and apparatus for depositing thin films on vertical surfaces |
SG126681A1 (en) * | 2001-07-25 | 2006-11-29 | Inst Data Storage | Oblique deposition apparatus |
-
2002
- 2002-03-19 DE DE50207784T patent/DE50207784D1/de not_active Expired - Fee Related
- 2002-03-19 PT PT02006164T patent/PT1350863E/pt unknown
- 2002-03-19 AT AT02006164T patent/ATE335868T1/de not_active IP Right Cessation
- 2002-03-19 DK DK02006164T patent/DK1350863T3/da active
- 2002-03-19 EP EP02006164A patent/EP1350863B1/de not_active Expired - Lifetime
- 2002-03-19 ES ES02006164T patent/ES2269541T3/es not_active Expired - Lifetime
-
2003
- 2003-03-18 AU AU2003218793A patent/AU2003218793A1/en not_active Abandoned
- 2003-03-18 EP EP03712055A patent/EP1497478A2/de not_active Withdrawn
- 2003-03-18 US US10/508,196 patent/US7300557B2/en not_active Expired - Fee Related
- 2003-03-18 JP JP2003576667A patent/JP2005530919A/ja active Pending
- 2003-03-18 KR KR10-2004-7014713A patent/KR20050000372A/ko not_active Application Discontinuation
- 2003-03-18 WO PCT/EP2003/002863 patent/WO2003078677A2/de not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
DE50207784D1 (de) | 2006-09-21 |
ES2269541T3 (es) | 2007-04-01 |
EP1350863B1 (de) | 2006-08-09 |
US7300557B2 (en) | 2007-11-27 |
AU2003218793A1 (en) | 2003-09-29 |
EP1497478A2 (de) | 2005-01-19 |
JP2005530919A (ja) | 2005-10-13 |
ATE335868T1 (de) | 2006-09-15 |
WO2003078677A2 (de) | 2003-09-25 |
EP1350863A1 (de) | 2003-10-08 |
WO2003078677A3 (de) | 2003-12-18 |
PT1350863E (pt) | 2006-12-29 |
KR20050000372A (ko) | 2005-01-03 |
US20050145477A1 (en) | 2005-07-07 |
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