DK121771B - Halvlederkomponent med en felteffekttransistor med isoleret styreelektrode samt fremgangsmåde til fremstilling af komponenten. - Google Patents
Halvlederkomponent med en felteffekttransistor med isoleret styreelektrode samt fremgangsmåde til fremstilling af komponenten.Info
- Publication number
- DK121771B DK121771B DK265168AA DK265168A DK121771B DK 121771 B DK121771 B DK 121771B DK 265168A A DK265168A A DK 265168AA DK 265168 A DK265168 A DK 265168A DK 121771 B DK121771 B DK 121771B
- Authority
- DK
- Denmark
- Prior art keywords
- component
- manufacturing
- field effect
- effect transistor
- control electrode
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
- H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
- H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
- H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
- H10W10/0128—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising multiple local oxidation process steps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/103—Mask, dual function, e.g. diffusion and oxidation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/113—Nitrides of boron or aluminum or gallium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/114—Nitrides of silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/117—Oxidation, selective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/141—Self-alignment coat gate
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL676707956A NL152707B (nl) | 1967-06-08 | 1967-06-08 | Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK121771B true DK121771B (da) | 1971-11-29 |
Family
ID=19800359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK265168AA DK121771B (da) | 1967-06-08 | 1968-06-06 | Halvlederkomponent med en felteffekttransistor med isoleret styreelektrode samt fremgangsmåde til fremstilling af komponenten. |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US3544858A (da) |
| JP (2) | JPS4816035B1 (da) |
| AT (1) | AT315916B (da) |
| BE (1) | BE716208A (da) |
| CH (1) | CH508988A (da) |
| DE (1) | DE1764401C3 (da) |
| DK (1) | DK121771B (da) |
| ES (1) | ES354734A1 (da) |
| FR (1) | FR1571569A (da) |
| GB (1) | GB1235177A (da) |
| NL (1) | NL152707B (da) |
| NO (1) | NO121852B (da) |
| SE (1) | SE330212B (da) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS518316B1 (da) * | 1969-10-22 | 1976-03-16 | ||
| US3698966A (en) * | 1970-02-26 | 1972-10-17 | North American Rockwell | Processes using a masking layer for producing field effect devices having oxide isolation |
| DE2128470A1 (de) * | 1970-06-15 | 1972-01-20 | Hitachi Ltd | Integrierte Halbleiterschaltung und Verfahren zu ihrer Herstellung |
| NL170348C (nl) * | 1970-07-10 | 1982-10-18 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult. |
| NL169121C (nl) * | 1970-07-10 | 1982-06-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een halfgeleiderlichaam, dat aan een oppervlak is voorzien van een althans ten dele in het halfgeleiderlichaam verzonken, door thermische oxydatie gevormd oxydepatroon. |
| NL7017066A (da) * | 1970-11-21 | 1972-05-24 | ||
| NL170901C (nl) * | 1971-04-03 | 1983-01-03 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| FR2134290B1 (da) * | 1971-04-30 | 1977-03-18 | Texas Instruments France | |
| US3751722A (en) * | 1971-04-30 | 1973-08-07 | Standard Microsyst Smc | Mos integrated circuit with substrate containing selectively formed resistivity regions |
| NL176406C (nl) * | 1971-10-27 | 1985-04-01 | Philips Nv | Ladingsgekoppelde halfgeleiderinrichting met een halfgeleiderlichaam bevattende een aan een oppervlak grenzende halfgeleiderlaag en middelen om informatie in de vorm van pakketten meerderheidsladingsdragers in te voeren in de halfgeleiderlaag. |
| NL161305C (nl) * | 1971-11-20 | 1980-01-15 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderin- richting. |
| JPS5538823B2 (da) * | 1971-12-22 | 1980-10-07 | ||
| US3853633A (en) * | 1972-12-04 | 1974-12-10 | Motorola Inc | Method of making a semi planar insulated gate field-effect transistor device with implanted field |
| GB1437112A (en) | 1973-09-07 | 1976-05-26 | Mullard Ltd | Semiconductor device manufacture |
| JPS5232680A (en) * | 1975-09-08 | 1977-03-12 | Toko Inc | Manufacturing process of insulation gate-type field-effect semiconduct or device |
| JPS6041470B2 (ja) * | 1976-06-15 | 1985-09-17 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| US4271421A (en) * | 1977-01-26 | 1981-06-02 | Texas Instruments Incorporated | High density N-channel silicon gate read only memory |
| US4830975A (en) * | 1983-01-13 | 1989-05-16 | National Semiconductor Corporation | Method of manufacture a primos device |
| DE3318213A1 (de) * | 1983-05-19 | 1984-11-22 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Verfahren zum herstellen eines integrierten isolierschicht-feldeffekttransistors mit zur gateelektrode selbstausgerichteten kontakten |
| US4862232A (en) * | 1986-09-22 | 1989-08-29 | General Motors Corporation | Transistor structure for high temperature logic circuits with insulation around source and drain regions |
| US4797718A (en) * | 1986-12-08 | 1989-01-10 | Delco Electronics Corporation | Self-aligned silicon MOS device |
| US4714685A (en) * | 1986-12-08 | 1987-12-22 | General Motors Corporation | Method of fabricating self-aligned silicon-on-insulator like devices |
| US4749441A (en) * | 1986-12-11 | 1988-06-07 | General Motors Corporation | Semiconductor mushroom structure fabrication |
| US4760036A (en) * | 1987-06-15 | 1988-07-26 | Delco Electronics Corporation | Process for growing silicon-on-insulator wafers using lateral epitaxial growth with seed window oxidation |
| US7981759B2 (en) * | 2007-07-11 | 2011-07-19 | Paratek Microwave, Inc. | Local oxidation of silicon planarization for polysilicon layers under thin film structures |
| JP5213429B2 (ja) * | 2007-12-13 | 2013-06-19 | キヤノン株式会社 | 電界効果型トランジスタ |
| USD872962S1 (en) | 2017-05-25 | 2020-01-14 | Unarco Industries Llc | Cart |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR14565E (fr) * | 1911-06-19 | 1912-01-11 | Robert Morane | Dispositif pour le lancement des aéroplaness |
| NL299911A (da) * | 1951-08-02 | |||
| NL261446A (da) * | 1960-03-25 | |||
| BE637065A (da) * | 1962-09-07 | |||
| FR1392748A (fr) * | 1963-03-07 | 1965-03-19 | Rca Corp | Montages de commutation à transistors |
| US3290753A (en) * | 1963-08-19 | 1966-12-13 | Bell Telephone Labor Inc | Method of making semiconductor integrated circuit elements |
| US3344322A (en) * | 1965-01-22 | 1967-09-26 | Hughes Aircraft Co | Metal-oxide-semiconductor field effect transistor |
-
1967
- 1967-06-08 NL NL676707956A patent/NL152707B/xx not_active IP Right Cessation
-
1968
- 1968-05-08 US US727563A patent/US3544858A/en not_active Ceased
- 1968-05-30 DE DE1764401A patent/DE1764401C3/de not_active Expired
- 1968-06-05 GB GB26718/68A patent/GB1235177A/en not_active Expired
- 1968-06-05 CH CH827368A patent/CH508988A/de not_active IP Right Cessation
- 1968-06-05 AT AT536568A patent/AT315916B/de not_active IP Right Cessation
- 1968-06-05 SE SE07533/68A patent/SE330212B/xx unknown
- 1968-06-06 ES ES354734A patent/ES354734A1/es not_active Expired
- 1968-06-06 BE BE716208D patent/BE716208A/xx not_active IP Right Cessation
- 1968-06-06 NO NO2216/68A patent/NO121852B/no unknown
- 1968-06-06 DK DK265168AA patent/DK121771B/da not_active IP Right Cessation
- 1968-06-10 FR FR1571569D patent/FR1571569A/fr not_active Expired
-
1972
- 1972-08-05 JP JP47078068A patent/JPS4816035B1/ja active Pending
-
1974
- 1974-04-08 JP JP49038970A patent/JPS5812748B1/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4816035B1 (da) | 1973-05-18 |
| JPS5812748B1 (da) | 1983-03-10 |
| NL6707956A (da) | 1968-12-09 |
| SE330212B (da) | 1970-11-09 |
| DE1764401A1 (de) | 1971-05-13 |
| DE1764401C3 (de) | 1982-07-08 |
| NL152707B (nl) | 1977-03-15 |
| FR1571569A (da) | 1969-06-20 |
| CH508988A (de) | 1971-06-15 |
| GB1235177A (en) | 1971-06-09 |
| US3544858A (en) | 1970-12-01 |
| ES354734A1 (es) | 1971-02-16 |
| DE1764401B2 (de) | 1975-06-19 |
| NO121852B (da) | 1971-04-19 |
| BE716208A (da) | 1968-12-06 |
| AT315916B (de) | 1974-06-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUP | Patent expired |