DK1031639T3 - Anordning til gasströmssputtering - Google Patents
Anordning til gasströmssputteringInfo
- Publication number
- DK1031639T3 DK1031639T3 DK00103783T DK00103783T DK1031639T3 DK 1031639 T3 DK1031639 T3 DK 1031639T3 DK 00103783 T DK00103783 T DK 00103783T DK 00103783 T DK00103783 T DK 00103783T DK 1031639 T3 DK1031639 T3 DK 1031639T3
- Authority
- DK
- Denmark
- Prior art keywords
- cathode
- gas flow
- cavity
- anode
- chamber
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/14—Making metallic powder or suspensions thereof using physical processes using electric discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Physical Vapour Deposition (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
- Glass Compositions (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Optical Fibers, Optical Fiber Cores, And Optical Fiber Bundles (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT1999GE000020A IT1310029B1 (it) | 1999-02-26 | 1999-02-26 | Vaporizzatore a microplasma pulsato. |
Publications (1)
Publication Number | Publication Date |
---|---|
DK1031639T3 true DK1031639T3 (da) | 2007-06-18 |
Family
ID=11355260
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK00103783T DK1031639T3 (da) | 1999-02-26 | 2000-02-23 | Anordning til gasströmssputtering |
Country Status (8)
Country | Link |
---|---|
US (1) | US6392188B1 (fr) |
EP (1) | EP1031639B1 (fr) |
AT (1) | ATE354686T1 (fr) |
DE (1) | DE60033458T2 (fr) |
DK (1) | DK1031639T3 (fr) |
ES (1) | ES2282065T3 (fr) |
IT (1) | IT1310029B1 (fr) |
PT (1) | PT1031639E (fr) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6972115B1 (en) | 1999-09-03 | 2005-12-06 | American Inter-Metallics, Inc. | Apparatus and methods for the production of powders |
DE10061743A1 (de) * | 2000-01-17 | 2001-07-19 | Siemens Ag | Verfahren zur Verbesserung der optischen Trennung von Leuchtstoffschichten |
EP1416363A3 (fr) * | 2002-10-31 | 2006-07-26 | eSpeed, Inc. | Clavier pour système de transactions |
US6965629B2 (en) * | 2003-09-24 | 2005-11-15 | Nanotechnologies, Inc. | Method and apparatus for initiating a pulsed arc discharge for nanopowder synthesis |
US7012214B2 (en) * | 2003-09-24 | 2006-03-14 | Nanotechnologies, Inc. | Nanopowder synthesis using pulsed arc discharge and applied magnetic field |
US7460225B2 (en) * | 2004-03-05 | 2008-12-02 | Vassili Karanassios | Miniaturized source devices for optical and mass spectrometry |
US20080006521A1 (en) * | 2004-06-07 | 2008-01-10 | Nanotechnologies, Inc. | Method for initiating a pulsed arc discharge for nanopowder synthesis |
JP3930495B2 (ja) * | 2004-06-16 | 2007-06-13 | 三菱重工業株式会社 | ニッケル超微粒子分散液体ナトリウムの製造方法、装置、液体ナトリウムの漏洩検出方法 |
US20110229579A1 (en) * | 2005-07-21 | 2011-09-22 | Roberta Carbone | Support Having Nanostructured Titanium Dioxide Film And Uses Thereof |
US20070272664A1 (en) * | 2005-08-04 | 2007-11-29 | Schroder Kurt A | Carbon and Metal Nanomaterial Composition and Synthesis |
EP1818110A1 (fr) | 2006-02-14 | 2007-08-15 | The European Community, represented by the European Commission | Matériau fonctionnalisé ainsi que la production de celui-ci |
US7951276B2 (en) * | 2006-06-08 | 2011-05-31 | The Board Of Trustees Of The University Of Illinois | Cluster generator |
ATE518970T1 (de) * | 2008-02-01 | 2011-08-15 | Applied Materials Inc | Doppelbeschichtungsvorrichtung mit verbesserter trennplatte |
WO2010083852A1 (fr) | 2009-01-26 | 2010-07-29 | Tethis S.R.L. | Dispositif microfluidique fonctionnalisé pour immunofluorescence |
TWI412052B (zh) * | 2009-07-14 | 2013-10-11 | Univ Nat Central | 以奈米粒子產生離子源之方法 |
RU2685564C1 (ru) * | 2018-01-09 | 2019-04-22 | Всеволод Германович Кизнер | Способ синтеза наночастиц металлов осаждением на пористый углеродный материал |
CN109759601A (zh) * | 2019-01-25 | 2019-05-17 | 大连理工大学 | 激光蒸发多腔体金属/碳纳米粉体连续生产方法 |
DE102019135749B4 (de) * | 2019-12-23 | 2024-02-08 | Ri Research Instruments Gmbh | Lichtbogen-Beschichtungsanordnung und Verfahren |
CN115870096B (zh) * | 2023-03-04 | 2023-05-16 | 常州华福环境科技股份有限公司 | 一种袋式除尘器用吹扫电磁脉冲阀 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1356769A (en) * | 1973-03-27 | 1974-06-12 | Cit Alcatel | Apparatus and method for depositing thin layers on a substrate |
US3962062A (en) * | 1974-12-09 | 1976-06-08 | Northern Electric Company Limited | Sputtered dielectric thin films |
US4610718A (en) * | 1984-04-27 | 1986-09-09 | Hitachi, Ltd. | Method for manufacturing ultra-fine particles |
DE3809734C1 (fr) * | 1988-03-23 | 1989-05-03 | Helmut Prof. Dr. 7805 Boetzingen De Haberland | |
US5425231A (en) * | 1993-07-02 | 1995-06-20 | Burton; Rodney L. | Gas fed pulsed electric thruster |
US5537005A (en) * | 1994-05-13 | 1996-07-16 | Hughes Aircraft | High-current, low-pressure plasma-cathode electron gun |
US5587093A (en) * | 1995-06-02 | 1996-12-24 | Electric Propulsion Laboratory, Inc. | Safe potential arc channel enhanced arc head |
US5591313A (en) * | 1995-06-30 | 1997-01-07 | Tabco Technologies, Inc. | Apparatus and method for localized ion sputtering |
-
1999
- 1999-02-26 IT IT1999GE000020A patent/IT1310029B1/it active
-
2000
- 2000-02-23 ES ES00103783T patent/ES2282065T3/es not_active Expired - Lifetime
- 2000-02-23 DE DE60033458T patent/DE60033458T2/de not_active Expired - Lifetime
- 2000-02-23 AT AT00103783T patent/ATE354686T1/de active
- 2000-02-23 EP EP00103783A patent/EP1031639B1/fr not_active Expired - Lifetime
- 2000-02-23 DK DK00103783T patent/DK1031639T3/da active
- 2000-02-23 PT PT00103783T patent/PT1031639E/pt unknown
- 2000-02-25 US US09/513,142 patent/US6392188B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6392188B1 (en) | 2002-05-21 |
ES2282065T3 (es) | 2007-10-16 |
PT1031639E (pt) | 2007-05-31 |
IT1310029B1 (it) | 2002-02-05 |
DE60033458D1 (de) | 2007-04-05 |
EP1031639B1 (fr) | 2007-02-21 |
DE60033458T2 (de) | 2007-10-31 |
ITGE990020A1 (it) | 2000-08-26 |
ATE354686T1 (de) | 2007-03-15 |
EP1031639A1 (fr) | 2000-08-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DK1031639T3 (da) | Anordning til gasströmssputtering | |
WO2000068451A3 (fr) | Source de vaporisation anionique a magnetron | |
WO2004027825A3 (fr) | Source de plasma a faisceau | |
WO2002095362A3 (fr) | Procede et appareil destines a une electronebulisation regulee par retroaction | |
WO2002098188A9 (fr) | Ioniseur non producteur de poussiere a decharge de flux d'air ionise | |
JPS60175351A (ja) | X線発生装置およびx線露光法 | |
MY139877A (en) | Lower electrode design for higher uniformity | |
AU6589398A (en) | Plasma processing system utilizing combined anode/ion source | |
MXPA03007666A (es) | Soplete de plasma contacto inicial. | |
WO2002043116A3 (fr) | Attaque de caracteristiques a rapport de forme eleve dans un substrat | |
EP1179833A3 (fr) | Détecteur de particules | |
US5640009A (en) | Fast atom beam source | |
PT1356496E (pt) | Dispositivo para a evaporação de materiais para revestir objectos | |
KR20030045652A (ko) | 기판의 대전을 억제하기 위한 이온빔 조사장치 및 방법 | |
EP1026723A3 (fr) | Dispositif de revêtement sous vide | |
KR940007214A (ko) | 음극 스퍼터링 및 마이크로파 조사를 이용한 플라즈마 발생 장치 | |
US20030011956A1 (en) | Negative ion generator | |
DE50313006D1 (de) | Hochfrequenz-Elektronenquelle, insbesondere Neutralisator | |
WO1999028520A3 (fr) | Dispositif de traitement de pieces dans un plasma basse pression | |
SG133405A1 (en) | Vacuum arc evaporation apparatus | |
CA2391911A1 (fr) | Appareil de traitement au plasma avec paroi conductrice d'electricite | |
KR20030044220A (ko) | 유전장벽방전을 이용한 플라즈마 용사 장치 및 그 장치를이용한 표면 처리 방법 | |
WO2004088706A3 (fr) | Lampe ultraviolette | |
JPH06124673A (ja) | イオン注入装置におけるプラズマ発生方法 | |
EP1045423A3 (fr) | Canon à électrons |