Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
  • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/70—Bipolar devices
  • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
  • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
  • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
  • H01L29/7395—Vertical transistors, e.g. vertical IGBT
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Ceramic Engineering (AREA)
• Bipolar Transistors (AREA)
• Semiconductor Integrated Circuits (AREA)
• Bipolar Integrated Circuits (AREA)
• Thyristors (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=22630442

Family Applications (1)

Country Status (7)

Families Citing this family (15)

Family Cites Families (9)

• 1993
  • 1993-12-27 US US08/173,077 patent/US5424563A/en not_active Expired - Lifetime
• 1994
  • 1994-12-23 EP EP94120629A patent/EP0662719B1/en not_active Expired - Lifetime
  • 1994-12-23 DK DK94120629T patent/DK0662719T3/da active
  • 1994-12-23 CA CA002139072A patent/CA2139072A1/en not_active Abandoned
  • 1994-12-23 DE DE69427683T patent/DE69427683T2/de not_active Expired - Fee Related
  • 1994-12-27 JP JP6326006A patent/JPH07254613A/ja active Pending
  • 1994-12-27 KR KR1019940037474A patent/KR950021508A/ko not_active Application Discontinuation

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