DK0662719T3 - Apparat og fremgangsmåde til forbedring af gennemslagsspændingsrobusthed i halvlederindretninger - Google Patents
Apparat og fremgangsmåde til forbedring af gennemslagsspændingsrobusthed i halvlederindretningerInfo
- Publication number
- DK0662719T3 DK0662719T3 DK94120629T DK94120629T DK0662719T3 DK 0662719 T3 DK0662719 T3 DK 0662719T3 DK 94120629 T DK94120629 T DK 94120629T DK 94120629 T DK94120629 T DK 94120629T DK 0662719 T3 DK0662719 T3 DK 0662719T3
- Authority
- DK
- Denmark
- Prior art keywords
- semiconductor devices
- breakdown voltage
- voltage resistance
- improving breakdown
- improving
- Prior art date
Links
- 230000015556 catabolic process Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/173,077 US5424563A (en) | 1993-12-27 | 1993-12-27 | Apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
DK0662719T3 true DK0662719T3 (da) | 2001-10-29 |
Family
ID=22630442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK94120629T DK0662719T3 (da) | 1993-12-27 | 1994-12-23 | Apparat og fremgangsmåde til forbedring af gennemslagsspændingsrobusthed i halvlederindretninger |
Country Status (7)
Country | Link |
---|---|
US (1) | US5424563A (da) |
EP (1) | EP0662719B1 (da) |
JP (1) | JPH07254613A (da) |
KR (1) | KR950021508A (da) |
CA (1) | CA2139072A1 (da) |
DE (1) | DE69427683T2 (da) |
DK (1) | DK0662719T3 (da) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3495847B2 (ja) * | 1995-09-11 | 2004-02-09 | シャープ株式会社 | サイリスタを備える半導体集積回路 |
KR19990024988A (ko) * | 1997-09-09 | 1999-04-06 | 윤종용 | 반절연 폴리실리콘막을 이용한 전력 반도체장치의 제조방법 |
JP2001085463A (ja) * | 1999-09-09 | 2001-03-30 | Rohm Co Ltd | 半導体チップおよびそれを用いた半導体装置 |
US6528846B1 (en) | 1999-09-23 | 2003-03-04 | International Business Machines Corporation | Asymmetric high voltage silicon on insulator device design for input output circuits |
CA2386095A1 (en) * | 1999-09-30 | 2001-04-05 | Hollis-Eden Pharmaceuticals, Inc. | Therapeutic treatment of androgen receptor driven conditions |
SE0004377D0 (sv) | 2000-11-29 | 2000-11-29 | Abb Research Ltd | A semiconductor device and a method for production thereof |
US7304327B1 (en) * | 2003-11-12 | 2007-12-04 | T-Ram Semiconductor, Inc. | Thyristor circuit and approach for temperature stability |
US7521773B2 (en) * | 2006-03-31 | 2009-04-21 | Fairchild Semiconductor Corporation | Power device with improved edge termination |
US8304829B2 (en) | 2008-12-08 | 2012-11-06 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
US8174067B2 (en) * | 2008-12-08 | 2012-05-08 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
US8106487B2 (en) | 2008-12-23 | 2012-01-31 | Pratt & Whitney Rocketdyne, Inc. | Semiconductor device having an inorganic coating layer applied over a junction termination extension |
US8227855B2 (en) * | 2009-02-09 | 2012-07-24 | Fairchild Semiconductor Corporation | Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same |
US8148749B2 (en) * | 2009-02-19 | 2012-04-03 | Fairchild Semiconductor Corporation | Trench-shielded semiconductor device |
US8049276B2 (en) * | 2009-06-12 | 2011-11-01 | Fairchild Semiconductor Corporation | Reduced process sensitivity of electrode-semiconductor rectifiers |
CN106298165B (zh) * | 2016-09-29 | 2018-03-16 | 宇龙计算机通信科技(深圳)有限公司 | 一种电压控制的可调电感 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1073560A (en) * | 1964-12-28 | 1967-06-28 | Gen Electric | Improvements in semiconductor devices |
GB1280948A (en) * | 1969-12-17 | 1972-07-12 | Motorola Inc | Semiconductor structure |
JPS5565461A (en) * | 1978-11-10 | 1980-05-16 | Oki Electric Ind Co Ltd | Semiconductor switch |
US4268846A (en) * | 1978-12-22 | 1981-05-19 | Eaton Corporation | Integrated gate turn-off device with lateral regenerative portion and vertical non-regenerative power portion |
JPS57169270A (en) * | 1981-04-10 | 1982-10-18 | Meidensha Electric Mfg Co Ltd | Gate turn of thyristor |
JPS5857748A (ja) * | 1981-09-30 | 1983-04-06 | Sharp Corp | 半導体装置 |
JPS58147064A (ja) * | 1982-02-25 | 1983-09-01 | Fuji Electric Co Ltd | トランジスタ |
JP2633544B2 (ja) * | 1987-01-29 | 1997-07-23 | 株式会社東芝 | ゲートターンオフサイリスタ |
JP2960108B2 (ja) * | 1990-05-08 | 1999-10-06 | 株式会社東芝 | 過電圧保護機能付半導体素子 |
-
1993
- 1993-12-27 US US08/173,077 patent/US5424563A/en not_active Expired - Lifetime
-
1994
- 1994-12-23 EP EP94120629A patent/EP0662719B1/en not_active Expired - Lifetime
- 1994-12-23 DK DK94120629T patent/DK0662719T3/da active
- 1994-12-23 CA CA002139072A patent/CA2139072A1/en not_active Abandoned
- 1994-12-23 DE DE69427683T patent/DE69427683T2/de not_active Expired - Fee Related
- 1994-12-27 JP JP6326006A patent/JPH07254613A/ja active Pending
- 1994-12-27 KR KR1019940037474A patent/KR950021508A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
DE69427683D1 (de) | 2001-08-16 |
CA2139072A1 (en) | 1995-06-28 |
EP0662719A1 (en) | 1995-07-12 |
EP0662719B1 (en) | 2001-07-11 |
DE69427683T2 (de) | 2002-04-25 |
KR950021508A (ko) | 1995-07-26 |
JPH07254613A (ja) | 1995-10-03 |
US5424563A (en) | 1995-06-13 |
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