DE977513C - Verfahren zur Beseitigung eines Sperreffektes von flaechenhaften Kontaktelektroden an Halbleiterkoerpern aus Germanium oder Silizium - Google Patents

Verfahren zur Beseitigung eines Sperreffektes von flaechenhaften Kontaktelektroden an Halbleiterkoerpern aus Germanium oder Silizium

Info

Publication number
DE977513C
DE977513C DES26374A DES0026374A DE977513C DE 977513 C DE977513 C DE 977513C DE S26374 A DES26374 A DE S26374A DE S0026374 A DES0026374 A DE S0026374A DE 977513 C DE977513 C DE 977513C
Authority
DE
Germany
Prior art keywords
contact electrode
silicon
germanium
free
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DES26374A
Other languages
German (de)
English (en)
Inventor
Karl Dr Phil Habil Seiler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent Deutschland AG
Original Assignee
Standard Elektrik Lorenz AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE516298D priority Critical patent/BE516298A/xx
Priority to FR1067783D priority patent/FR1067783A/fr
Application filed by Standard Elektrik Lorenz AG filed Critical Standard Elektrik Lorenz AG
Priority to DES26374A priority patent/DE977513C/de
Priority to GB31558/52A priority patent/GB733095A/en
Priority to US505197A priority patent/US2869057A/en
Priority to GB12975/56A priority patent/GB794230A/en
Priority to FR69985D priority patent/FR69985E/fr
Application granted granted Critical
Publication of DE977513C publication Critical patent/DE977513C/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/871—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group I-VI materials, e.g. Cu2O; being Group I-VII materials, e.g. CuI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Thermistors And Varistors (AREA)
DES26374A 1951-12-18 1951-12-18 Verfahren zur Beseitigung eines Sperreffektes von flaechenhaften Kontaktelektroden an Halbleiterkoerpern aus Germanium oder Silizium Expired DE977513C (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
BE516298D BE516298A (enrdf_load_stackoverflow) 1951-12-18
FR1067783D FR1067783A (fr) 1951-12-18 Surface redresseuse comportant du silicium ou du germanium
DES26374A DE977513C (de) 1951-12-18 1951-12-18 Verfahren zur Beseitigung eines Sperreffektes von flaechenhaften Kontaktelektroden an Halbleiterkoerpern aus Germanium oder Silizium
GB31558/52A GB733095A (en) 1951-12-18 1952-12-12 Improvements in or relating to dry contact type rectifiers
US505197A US2869057A (en) 1951-12-18 1955-05-02 Electric current rectifier
GB12975/56A GB794230A (en) 1951-12-18 1956-04-27 Electric current rectifier
FR69985D FR69985E (fr) 1951-12-18 1956-05-02 Surface redresseuse comportant du silicium ou du germanium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES26374A DE977513C (de) 1951-12-18 1951-12-18 Verfahren zur Beseitigung eines Sperreffektes von flaechenhaften Kontaktelektroden an Halbleiterkoerpern aus Germanium oder Silizium
US505197A US2869057A (en) 1951-12-18 1955-05-02 Electric current rectifier

Publications (1)

Publication Number Publication Date
DE977513C true DE977513C (de) 1966-11-03

Family

ID=25995001

Family Applications (1)

Application Number Title Priority Date Filing Date
DES26374A Expired DE977513C (de) 1951-12-18 1951-12-18 Verfahren zur Beseitigung eines Sperreffektes von flaechenhaften Kontaktelektroden an Halbleiterkoerpern aus Germanium oder Silizium

Country Status (5)

Country Link
US (1) US2869057A (enrdf_load_stackoverflow)
BE (1) BE516298A (enrdf_load_stackoverflow)
DE (1) DE977513C (enrdf_load_stackoverflow)
FR (2) FR69985E (enrdf_load_stackoverflow)
GB (2) GB733095A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3310858A (en) * 1963-12-12 1967-03-28 Bell Telephone Labor Inc Semiconductor diode and method of making

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL46218C (enrdf_load_stackoverflow) * 1936-06-20 1900-01-01
CH223414A (de) * 1940-07-03 1942-09-15 Philips Nv Sperrschichtgleichrichter, bei dem eine Anzahl Gleichrichterzellen mit gemeinsamer Tragplatte vorhanden ist.
US2563503A (en) * 1951-08-07 Transistor
DE814487C (de) * 1948-06-26 1951-09-24 Western Electric Co Feste, leitende elektrische Vorrichtung unter Verwendung von Halbleiterschichten zur Steuerung elektrischer Energie
DE968125C (de) * 1951-09-24 1958-01-16 Licentia Gmbh Verfahren zur Herstellung eines sperrschichtfreien Kontaktes mit Germanium
DE971697C (de) * 1948-10-01 1959-03-12 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2342278A (en) * 1944-02-22 Manufacturing selenium cells
US1866351A (en) * 1927-01-29 1932-07-05 Gen Electric Rectification of alternating currents
US1826955A (en) * 1927-03-30 1931-10-13 Ruben Rectifier Corp Electric current rectifier
NL49864C (enrdf_load_stackoverflow) * 1935-06-22
DE922896C (de) * 1938-08-16 1955-01-27 Siemens Ag Verfahren zur Herstellung eines Selengleichrichters
BE436338A (enrdf_load_stackoverflow) * 1938-09-09
US2438923A (en) * 1943-02-11 1948-04-06 Fed Telephone & Radio Corp Method and means for making selenium elements
US2551048A (en) * 1947-07-19 1951-05-01 Vickers Inc Method of making selenium coated elements
US2653879A (en) * 1949-04-06 1953-09-29 Ohio Commw Eng Co Bonding of metal carbonyl deposits
US2740925A (en) * 1952-02-18 1956-04-03 Int Rectifier Corp Tellurium rectifier and method of making it

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2563503A (en) * 1951-08-07 Transistor
NL46218C (enrdf_load_stackoverflow) * 1936-06-20 1900-01-01
CH223414A (de) * 1940-07-03 1942-09-15 Philips Nv Sperrschichtgleichrichter, bei dem eine Anzahl Gleichrichterzellen mit gemeinsamer Tragplatte vorhanden ist.
DE814487C (de) * 1948-06-26 1951-09-24 Western Electric Co Feste, leitende elektrische Vorrichtung unter Verwendung von Halbleiterschichten zur Steuerung elektrischer Energie
DE971697C (de) * 1948-10-01 1959-03-12 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern
DE968125C (de) * 1951-09-24 1958-01-16 Licentia Gmbh Verfahren zur Herstellung eines sperrschichtfreien Kontaktes mit Germanium

Also Published As

Publication number Publication date
GB794230A (en) 1958-04-30
GB733095A (en) 1955-07-06
BE516298A (enrdf_load_stackoverflow)
FR69985E (fr) 1959-01-30
FR1067783A (fr) 1954-06-18
US2869057A (en) 1959-01-13

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