DE966849C - Transistorelement und Transistorschaltung - Google Patents

Transistorelement und Transistorschaltung

Info

Publication number
DE966849C
DE966849C DEN8109A DEN0008109A DE966849C DE 966849 C DE966849 C DE 966849C DE N8109 A DEN8109 A DE N8109A DE N0008109 A DEN0008109 A DE N0008109A DE 966849 C DE966849 C DE 966849C
Authority
DE
Germany
Prior art keywords
zone
semiconductor
signal
circuit
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEN8109A
Other languages
German (de)
English (en)
Inventor
Johannes Meyer Cluwen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE966849C publication Critical patent/DE966849C/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C1/00—Amplitude modulation
    • H03C1/36—Amplitude modulation by means of semiconductor device having at least three electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D1/00—Demodulation of amplitude-modulated oscillations
    • H03D1/14—Demodulation of amplitude-modulated oscillations by means of non-linear elements having more than two poles
    • H03D1/18—Demodulation of amplitude-modulated oscillations by means of non-linear elements having more than two poles of semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D3/00—Demodulation of angle-, frequency- or phase- modulated oscillations
    • H03D3/02—Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal
    • H03D3/06—Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by combining signals additively or in product demodulators
    • H03D3/14—Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by combining signals additively or in product demodulators by means of semiconductor devices having more than two electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/032—Diffusion length

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Bipolar Transistors (AREA)
DEN8109A 1952-12-01 1953-11-29 Transistorelement und Transistorschaltung Expired DE966849C (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL174267A NL83838C (en:Method) 1952-12-01 1952-12-01

Publications (1)

Publication Number Publication Date
DE966849C true DE966849C (de) 1957-09-12

Family

ID=19750589

Family Applications (1)

Application Number Title Priority Date Filing Date
DEN8109A Expired DE966849C (de) 1952-12-01 1953-11-29 Transistorelement und Transistorschaltung

Country Status (7)

Country Link
US (2) US3299281A (en:Method)
BE (1) BE524721A (en:Method)
CH (1) CH322790A (en:Method)
DE (1) DE966849C (en:Method)
FR (1) FR1093050A (en:Method)
GB (1) GB741267A (en:Method)
NL (1) NL83838C (en:Method)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1132662B (de) * 1957-12-28 1962-07-05 Suisse Horlogerie Flaechentransistor mit zwei ohmschen Steuerelektroden fuer den Emitter-Kollektor-Strom an der Basiszone
DE1209213B (de) * 1960-05-02 1966-01-20 Westinghouse Electric Corp Unipolartransistor mit einem scheibenfoermigen Halbleiterkoerper und Verfahren zum Herstellen
DE1242690B (de) * 1960-05-02 1967-06-22 Texas Instruments Inc Schaltungsanordnung mit einem unipolaren und einem bipolaren Transistor
DE1284517B (de) * 1959-09-11 1968-12-05 Fairchild Camera Instr Co Integrierte Halbleiterschaltung

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE542318A (en:Method) * 1954-10-26
US3663872A (en) * 1969-01-22 1972-05-16 Nippon Electric Co Integrated circuit lateral transistor
US3656034A (en) * 1970-01-20 1972-04-11 Ibm Integrated lateral transistor having increased beta and bandwidth
US3676785A (en) * 1970-12-10 1972-07-11 Honeywell Inf Systems High gain, ultra linear detector for frequency modulation
DE2460269A1 (de) * 1974-12-19 1976-07-01 Siemens Ag Bipolares transistorpaar mit elektrisch leitend miteinander verbundenen basisgebieten und verfahren zur herstellung des transistorpaares

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2600500A (en) * 1948-09-24 1952-06-17 Bell Telephone Labor Inc Semiconductor signal translating device with controlled carrier transit times
DE833366C (de) * 1949-04-14 1952-06-30 Siemens & Halske A G Halbleiterverstaerker

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2100458A (en) * 1933-05-18 1937-11-30 Siemens Ag Electrical circuit with modulating or rectifying devices
US2095998A (en) * 1934-03-01 1937-10-19 James C Mcnary Demodulating circuit and method
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2666814A (en) * 1949-04-27 1954-01-19 Bell Telephone Labor Inc Semiconductor translating device
US2644859A (en) * 1950-08-05 1953-07-07 Rca Corp Stabilized semiconductor amplifier circuits
BE519804A (en:Method) * 1952-05-09
DE1048359B (en:Method) * 1952-07-22
US2742383A (en) * 1952-08-09 1956-04-17 Hughes Aircraft Co Germanium junction-type semiconductor devices
US2657360A (en) * 1952-08-15 1953-10-27 Bell Telephone Labor Inc Four-electrode transistor modulator
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices
US2801347A (en) * 1953-03-17 1957-07-30 Rca Corp Multi-electrode semiconductor devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2600500A (en) * 1948-09-24 1952-06-17 Bell Telephone Labor Inc Semiconductor signal translating device with controlled carrier transit times
DE833366C (de) * 1949-04-14 1952-06-30 Siemens & Halske A G Halbleiterverstaerker

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1132662B (de) * 1957-12-28 1962-07-05 Suisse Horlogerie Flaechentransistor mit zwei ohmschen Steuerelektroden fuer den Emitter-Kollektor-Strom an der Basiszone
DE1284517B (de) * 1959-09-11 1968-12-05 Fairchild Camera Instr Co Integrierte Halbleiterschaltung
DE1489893B1 (de) * 1959-09-11 1971-09-16 Fairchild Camera Instr Co Integrierte halbleiterschaltung
DE1209213B (de) * 1960-05-02 1966-01-20 Westinghouse Electric Corp Unipolartransistor mit einem scheibenfoermigen Halbleiterkoerper und Verfahren zum Herstellen
DE1242690B (de) * 1960-05-02 1967-06-22 Texas Instruments Inc Schaltungsanordnung mit einem unipolaren und einem bipolaren Transistor

Also Published As

Publication number Publication date
FR1093050A (fr) 1955-04-29
NL83838C (en:Method) 1957-01-15
US3299281A (en) 1967-01-17
USRE27110E (en) 1971-03-30
CH322790A (de) 1957-06-30
BE524721A (en:Method) 1956-04-13
GB741267A (en) 1955-11-30

Similar Documents

Publication Publication Date Title
DE3407975C2 (de) Normalerweise ausgeschaltete, Gate-gesteuerte, elektrische Schaltungsanordnung mit kleinem Einschaltwiderstand
DE2249645C3 (de) Stromverstärker
DE1279196B (de) Flaechentransistor
DE1211334B (de) Halbleiterbauelement mit eingelassenen Zonen
DE2323478A1 (de) Datenuebertragungsanordnung
DE2500057C2 (de) Schaltungsanordnung zur Frequenzstabilisierung einer integrierten Schaltung
DE966849C (de) Transistorelement und Transistorschaltung
DE943964C (de) Halbleiter-Signaluebertragungseinrichtung
DE69403739T2 (de) Spannung-Strom-Umsetzter
DE2558489B2 (en:Method)
DE1212221B (de) Halbleiterbauelement mit einem scheibenfoermigen Halbleiterkoerper und zwei sperrfreien Basiselektroden
DE2513893C2 (de) Transistorverstärker
DE2519056A1 (de) Geraeuschsperre
DE2903445A1 (de) Mit gesaettigten transistoren arbeitende schaltung
DE1059510B (de) Einrichtung zur Regelung des Verstaerkungsfaktors eines Transistors mit zwei mit derselben Zone verbundenen Basiselektroden
DE2203872B2 (de) Integrierter NF-Leistungsverstärker mit Darlington-Eingangsstufe und mit quasikomplementärer Gegentakt-Ausgangsstufe
DEN0008109MA (en:Method)
DE3116229A1 (de) "steuerbare widerstandsanordnung fuer einen signalverstaerker"
DE1029872B (de) Fremdgesteuerte Transistorkippschaltung mit kurzer Abfallzeit
DE2539233C3 (de) Schaltungsanordnung zur Erzeugung impulsförmiger Schaltspannungen
DE1948178A1 (de) Temperaturstabile monolithische Schaltung einer Referenzspannungsquelle,insbesondere fuer monolithische logische Halbleiterschaltungen
DE1227513B (de) Verstaerkerschaltung mit einem Transistor und einer Elektronenroehre
DE1215815C2 (de) Mikrominiaturisierte elektronische Schaltungsanordnung
DE1919507C3 (de) Kondensatorüberladungsvorrichtung
DE3485910T2 (de) Halbleiteranordnung mit variabler impedanz.