DE832022C - Kristallkontaktvorrichtung und Verfahren zu ihrer Herstellung - Google Patents

Kristallkontaktvorrichtung und Verfahren zu ihrer Herstellung

Info

Publication number
DE832022C
DE832022C DEG2338A DEG0002338A DE832022C DE 832022 C DE832022 C DE 832022C DE G2338 A DEG2338 A DE G2338A DE G0002338 A DEG0002338 A DE G0002338A DE 832022 C DE832022 C DE 832022C
Authority
DE
Germany
Prior art keywords
contact
crystal
contact device
contact member
rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEG2338A
Other languages
German (de)
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Company PLC
Original Assignee
General Electric Company PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Company PLC filed Critical General Electric Company PLC
Application granted granted Critical
Publication of DE832022C publication Critical patent/DE832022C/de
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/10Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Measuring Leads Or Probes (AREA)
  • Die Bonding (AREA)
DEG2338A 1949-06-14 1950-06-15 Kristallkontaktvorrichtung und Verfahren zu ihrer Herstellung Expired DE832022C (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB2584461X 1949-06-14
GB283223X 1949-06-17

Publications (1)

Publication Number Publication Date
DE832022C true DE832022C (de) 1952-02-21

Family

ID=32232478

Family Applications (1)

Application Number Title Priority Date Filing Date
DEG2338A Expired DE832022C (de) 1949-06-14 1950-06-15 Kristallkontaktvorrichtung und Verfahren zu ihrer Herstellung

Country Status (6)

Country Link
US (1) US2584461A (en, 2012)
CH (1) CH283223A (en, 2012)
DE (1) DE832022C (en, 2012)
FR (1) FR1020049A (en, 2012)
GB (1) GB666916A (en, 2012)
NL (1) NL154199C (en, 2012)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2728881A (en) * 1950-03-31 1955-12-27 Gen Electric Asymmetrically conductive devices
US2609429A (en) * 1950-07-29 1952-09-02 Rca Corp Semiconduction electrode construction
US2666874A (en) * 1950-08-25 1954-01-19 Rca Corp Construction of semiconductor devices
US2757322A (en) * 1951-05-04 1956-07-31 Gen Electric Co Ltd Crystal contact devices
DE896392C (de) * 1951-11-13 1953-11-12 Licentia Gmbh Gehaeuse fuer ein elektrisch unsymmetrisch leitendes System vom Kristalltyp
US2813991A (en) * 1952-11-05 1957-11-19 Gen Electric Electron emitting electrode
US2827598A (en) * 1953-03-19 1958-03-18 Raytheon Mfg Co Method of encasing a transistor and structure thereof
US3066249A (en) * 1953-04-07 1962-11-27 Sylvania Electric Prod Junction type semiconductor triode
US2779901A (en) * 1953-05-15 1957-01-29 Motorola Inc Transistor unit
US2869053A (en) * 1953-05-22 1959-01-13 Motorola Inc Transistor unit
US2861228A (en) * 1953-05-29 1958-11-18 Motorola Inc Semi-conductor unit
US2919387A (en) * 1953-06-05 1959-12-29 Texas Instruments Inc Point contact semiconductor device
US2696575A (en) * 1953-06-05 1954-12-07 Motorola Inc Transistor unit
US3142791A (en) * 1955-12-07 1964-07-28 Motorola Inc Transistor and housing assembly

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US756676A (en) * 1902-11-10 1904-04-05 Internat Wireless Telegraph Company Wave-responsive device.
GB190721408A (en) * 1907-09-26 1908-04-09 William Phillips Thompson An Improved Detector for Wireless Telegraphy.
US2441590A (en) * 1944-03-24 1948-05-18 Bell Telephone Labor Inc Translating device

Also Published As

Publication number Publication date
FR1020049A (fr) 1953-01-30
US2584461A (en) 1952-02-05
GB666916A (en) 1952-02-20
NL154199C (en, 2012)
CH283223A (de) 1952-05-31

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