DE8232497U1 - Solarzelle aus amorphem Silizium - Google Patents
Solarzelle aus amorphem SiliziumInfo
- Publication number
- DE8232497U1 DE8232497U1 DE8232497U DE8232497U DE8232497U1 DE 8232497 U1 DE8232497 U1 DE 8232497U1 DE 8232497 U DE8232497 U DE 8232497U DE 8232497 U DE8232497 U DE 8232497U DE 8232497 U1 DE8232497 U1 DE 8232497U1
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- solar cell
- aluminum
- amorphous silicon
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 229910000676 Si alloy Inorganic materials 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims 2
- 210000004027 cell Anatomy 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 101150096058 Erfe gene Proteins 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000000208 hepatic perisinusoidal cell Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19823242835 DE3242835A1 (de) | 1982-11-19 | 1982-11-19 | Solarzelle aus amorphem silizium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE8232497U1 true DE8232497U1 (de) | 1986-01-30 |
Family
ID=6178518
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8232497U Expired DE8232497U1 (de) | 1982-11-19 | 1982-11-19 | Solarzelle aus amorphem Silizium |
| DE19823242835 Withdrawn DE3242835A1 (de) | 1982-11-19 | 1982-11-19 | Solarzelle aus amorphem silizium |
| DE8383111371T Expired DE3378335D1 (de) | 1982-11-19 | 1983-11-14 | Amorphous silicium solar cell |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823242835 Withdrawn DE3242835A1 (de) | 1982-11-19 | 1982-11-19 | Solarzelle aus amorphem silizium |
| DE8383111371T Expired DE3378335D1 (de) | 1982-11-19 | 1983-11-14 | Amorphous silicium solar cell |
Country Status (4)
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61131568A (ja) * | 1984-11-30 | 1986-06-19 | Fuji Electric Co Ltd | 半導体放射線検出器 |
| JPS61212070A (ja) * | 1985-03-18 | 1986-09-20 | Kanegafuchi Chem Ind Co Ltd | 非晶質を含む薄膜半導体系太陽電池 |
| US4673623A (en) * | 1985-05-06 | 1987-06-16 | The Board Of Trustees Of The Leland Stanford Junior University | Layered and homogeneous films of aluminum and aluminum/silicon with titanium and tungsten for multilevel interconnects |
| JPH0656883B2 (ja) * | 1986-03-03 | 1994-07-27 | 鐘淵化学工業株式会社 | 半導体装置 |
| US5154810A (en) * | 1991-01-29 | 1992-10-13 | Optical Coating Laboratory, Inc. | Thin film coating and method |
| WO1997018447A1 (fr) * | 1995-11-14 | 1997-05-22 | Tom Konstantin Abramovich | Procede de mesure de rayonnement ultraviolet, dispositif de mise en oeuvre et photo-convertisseur |
| US5907766A (en) * | 1996-10-21 | 1999-05-25 | Electric Power Research Institute, Inc. | Method of making a solar cell having improved anti-reflection passivation layer |
| DE10020429A1 (de) * | 2000-04-26 | 2001-11-15 | Torsten Niemeyer | Dachelement mit integrierter Solarzelle |
| US7916980B2 (en) | 2006-01-13 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | Interconnect structure for MEMS device |
| US8575474B2 (en) * | 2006-03-20 | 2013-11-05 | Heracus Precious Metals North America Conshohocken LLC | Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper |
| US8076570B2 (en) | 2006-03-20 | 2011-12-13 | Ferro Corporation | Aluminum-boron solar cell contacts |
| AU2007303511B2 (en) * | 2006-09-28 | 2011-05-19 | Sharp Kabushiki Kaisha | Solar cell, concentrating solar power generation module, concentrating solar power generation unit, method of manufacturing solar cell, and solar cell manufacturing apparatus |
| US7569462B2 (en) * | 2006-12-13 | 2009-08-04 | Applied Materials, Inc. | Directional crystallization of silicon sheets using rapid thermal processing |
| US8158880B1 (en) * | 2007-01-17 | 2012-04-17 | Aqt Solar, Inc. | Thin-film photovoltaic structures including semiconductor grain and oxide layers |
| WO2009151979A2 (en) * | 2008-06-09 | 2009-12-17 | 4Power, Llc | High-efficiency solar cell structures and methods |
| US20110124146A1 (en) * | 2009-05-29 | 2011-05-26 | Pitera Arthur J | Methods of forming high-efficiency multi-junction solar cell structures |
| US9461186B2 (en) | 2010-07-15 | 2016-10-04 | First Solar, Inc. | Back contact for a photovoltaic module |
| US8604330B1 (en) | 2010-12-06 | 2013-12-10 | 4Power, Llc | High-efficiency solar-cell arrays with integrated devices and methods for forming them |
| US9562292B2 (en) * | 2014-05-05 | 2017-02-07 | The United States Of America, As Represented By The Secretary Of Commerce | Photoactive article, process for making, and use of same |
| JP6191587B2 (ja) | 2014-12-08 | 2017-09-06 | トヨタ自動車株式会社 | 半導体装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3914856A (en) * | 1972-06-05 | 1975-10-28 | Fang Pao Hsien | Economical solar cell for producing electricity |
| US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
| DE2754652A1 (de) * | 1977-12-08 | 1979-06-13 | Ibm Deutschland | Verfahren zum herstellen von silicium-photoelementen |
| DE2827049A1 (de) * | 1978-06-20 | 1980-01-10 | Siemens Ag | Solarzellenbatterie und verfahren zu ihrer herstellung |
| DE3023165A1 (de) * | 1980-06-20 | 1982-01-07 | Siemens AG, 1000 Berlin und 8000 München | Solarzelle aus amorphem silizium |
| US4320251A (en) * | 1980-07-28 | 1982-03-16 | Solamat Inc. | Ohmic contacts for solar cells by arc plasma spraying |
| DE3036260A1 (de) * | 1980-09-26 | 1982-04-29 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur herstellung von elektrischen kontakten an einer silizium-solarzelle |
| US4417092A (en) * | 1981-03-16 | 1983-11-22 | Exxon Research And Engineering Co. | Sputtered pin amorphous silicon semi-conductor device and method therefor |
-
1982
- 1982-11-19 DE DE8232497U patent/DE8232497U1/de not_active Expired
- 1982-11-19 DE DE19823242835 patent/DE3242835A1/de not_active Withdrawn
-
1983
- 1983-08-18 US US06/524,438 patent/US4492813A/en not_active Expired - Fee Related
- 1983-11-14 EP EP83111371A patent/EP0112480B1/de not_active Expired
- 1983-11-14 DE DE8383111371T patent/DE3378335D1/de not_active Expired
- 1983-11-17 JP JP58217048A patent/JPS59104184A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| EP0112480A2 (de) | 1984-07-04 |
| EP0112480B1 (de) | 1988-10-26 |
| DE3378335D1 (de) | 1988-12-01 |
| JPH0449790B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-08-12 |
| US4492813A (en) | 1985-01-08 |
| DE3242835A1 (de) | 1984-05-24 |
| JPS59104184A (ja) | 1984-06-15 |
| EP0112480A3 (en) | 1985-10-16 |
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