DE69939687D1 - Siliziumwafer und verfahren zu dessen herstellung - Google Patents

Siliziumwafer und verfahren zu dessen herstellung

Info

Publication number
DE69939687D1
DE69939687D1 DE69939687T DE69939687T DE69939687D1 DE 69939687 D1 DE69939687 D1 DE 69939687D1 DE 69939687 T DE69939687 T DE 69939687T DE 69939687 T DE69939687 T DE 69939687T DE 69939687 D1 DE69939687 D1 DE 69939687D1
Authority
DE
Germany
Prior art keywords
production
silicon wafer
wafer
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69939687T
Other languages
English (en)
Inventor
Norihiro Kobayashi
Shoji Akiyama
Takao Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69939687D1 publication Critical patent/DE69939687D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE69939687T 1998-12-04 1999-12-01 Siliziumwafer und verfahren zu dessen herstellung Expired - Lifetime DE69939687D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34617398A JP3719021B2 (ja) 1998-12-04 1998-12-04 シリコンウエーハの製造方法およびシリコンウエーハ
PCT/JP1999/006732 WO2000034553A1 (fr) 1998-12-04 1999-12-01 Tranche de silicium et son procede de fabrication

Publications (1)

Publication Number Publication Date
DE69939687D1 true DE69939687D1 (de) 2008-11-20

Family

ID=18381617

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69939687T Expired - Lifetime DE69939687D1 (de) 1998-12-04 1999-12-01 Siliziumwafer und verfahren zu dessen herstellung

Country Status (7)

Country Link
US (2) US6333279B1 (de)
EP (1) EP1052313B1 (de)
JP (1) JP3719021B2 (de)
KR (1) KR20010040544A (de)
DE (1) DE69939687D1 (de)
TW (1) TW589416B (de)
WO (1) WO2000034553A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3719021B2 (ja) * 1998-12-04 2005-11-24 信越半導体株式会社 シリコンウエーハの製造方法およびシリコンウエーハ
JP4815801B2 (ja) * 2004-12-28 2011-11-16 信越半導体株式会社 シリコンウエーハの研磨方法および製造方法および円板状ワークの研磨装置ならびにシリコンウエーハ
US7431470B2 (en) 2005-02-04 2008-10-07 Coleiro Lenard C Trans-membrane solar energy lighting device
KR100765639B1 (ko) * 2006-07-03 2007-10-10 에스. 오. 이. 떼끄 씰리꽁 오 냉쉴라또흐 떼끄놀로지 웨이퍼의 표면 거칠기 개선 방법
JP5211750B2 (ja) * 2008-02-25 2013-06-12 信越半導体株式会社 単結晶シリコンウエーハの製造方法
JP2010016078A (ja) * 2008-07-02 2010-01-21 Shin Etsu Handotai Co Ltd シリコン単結晶ウェーハ及びシリコン単結晶ウェーハの製造方法並びにシリコン単結晶ウェーハの評価方法
EP2722423B1 (de) 2009-03-25 2017-01-11 Sumco Corporation Herstellungsverfahren einer Siliziumscheibe
JP5660237B2 (ja) * 2014-03-18 2015-01-28 株式会社Sumco シリコンウェーハの製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0786289A (ja) * 1993-07-22 1995-03-31 Toshiba Corp 半導体シリコンウェハおよびその製造方法
JP3226193B2 (ja) * 1994-02-24 2001-11-05 東芝セラミックス株式会社 シリコンウェーハの製造方法
US5788763A (en) * 1995-03-09 1998-08-04 Toshiba Ceramics Co., Ltd. Manufacturing method of a silicon wafer having a controlled BMD concentration
US5665202A (en) * 1995-11-24 1997-09-09 Motorola, Inc. Multi-step planarization process using polishing at two different pad pressures
JP3518324B2 (ja) 1997-03-27 2004-04-12 信越半導体株式会社 シリコンウエーハの熱処理方法およびシリコンウエーハ
US6403502B1 (en) * 1997-03-27 2002-06-11 Shin-Etsu Handotai Co., Ltd. Heat treatment method for a silicon wafer and a silicon wafer heat-treated by the method
US6086679A (en) * 1997-10-24 2000-07-11 Quester Technology, Inc. Deposition systems and processes for transport polymerization and chemical vapor deposition
JP3500063B2 (ja) * 1998-04-23 2004-02-23 信越半導体株式会社 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ
JP3719021B2 (ja) * 1998-12-04 2005-11-24 信越半導体株式会社 シリコンウエーハの製造方法およびシリコンウエーハ
US6189546B1 (en) * 1999-12-29 2001-02-20 Memc Electronic Materials, Inc. Polishing process for manufacturing dopant-striation-free polished silicon wafers

Also Published As

Publication number Publication date
US6538285B2 (en) 2003-03-25
TW589416B (en) 2004-06-01
JP3719021B2 (ja) 2005-11-24
EP1052313A4 (de) 2002-05-22
JP2000169293A (ja) 2000-06-20
US6333279B1 (en) 2001-12-25
KR20010040544A (ko) 2001-05-15
EP1052313A1 (de) 2000-11-15
EP1052313B1 (de) 2008-10-08
US20020070427A1 (en) 2002-06-13
WO2000034553A1 (fr) 2000-06-15

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