DE69936794D1 - Halbleiterdrucksensor und vorrichtung zur erfassung von drucken - Google Patents
Halbleiterdrucksensor und vorrichtung zur erfassung von druckenInfo
- Publication number
- DE69936794D1 DE69936794D1 DE69936794T DE69936794T DE69936794D1 DE 69936794 D1 DE69936794 D1 DE 69936794D1 DE 69936794 T DE69936794 T DE 69936794T DE 69936794 T DE69936794 T DE 69936794T DE 69936794 D1 DE69936794 D1 DE 69936794D1
- Authority
- DE
- Germany
- Prior art keywords
- pressure sensor
- semiconductor pressure
- detecting printing
- printing
- detecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00333—Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00293—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS maintaining a controlled atmosphere with processes not provided for in B81C1/00285
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0145—Hermetically sealing an opening in the lid
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP1999/004485 WO2001014842A1 (fr) | 1999-08-20 | 1999-08-20 | Detecteur de pression semi-conducteur et dispositif de detection de pression |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69936794D1 true DE69936794D1 (de) | 2007-09-20 |
DE69936794T2 DE69936794T2 (de) | 2008-04-30 |
Family
ID=14236501
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69936794T Expired - Fee Related DE69936794T2 (de) | 1999-08-20 | 1999-08-20 | Halbleiterdrucksensor und vorrichtung zur erfassung von drucken |
Country Status (4)
Country | Link |
---|---|
US (2) | US6892582B1 (de) |
EP (1) | EP1207378B1 (de) |
DE (1) | DE69936794T2 (de) |
WO (1) | WO2001014842A1 (de) |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3532776B2 (ja) * | 1998-10-20 | 2004-05-31 | 株式会社日立製作所 | 自動車用センサの取付け構造 |
DE10163567A1 (de) * | 2001-12-21 | 2003-07-17 | Endress & Hauser Gmbh & Co Kg | Drucksensor mit hydrophober Beschichtung |
EP1394554B1 (de) * | 2002-08-30 | 2011-11-02 | STMicroelectronics Srl | Herstellungsverfahren für einen Grenzbeschleunigungsaufnehmer |
JP3994885B2 (ja) * | 2003-02-17 | 2007-10-24 | ソニー株式会社 | Mems素子とその製造方法、回折型mems素子 |
FR2864341B1 (fr) * | 2003-12-19 | 2006-03-24 | Commissariat Energie Atomique | Microcomposant a cavite hermetique comportant un bouchon et procede de fabrication d'un tel microcomposant |
US7491566B2 (en) | 2004-02-09 | 2009-02-17 | Analog Devices, Inc. | Method of forming a device by removing a conductive layer of a wafer |
JP2005233877A (ja) * | 2004-02-23 | 2005-09-02 | Alps Electric Co Ltd | 圧力センサ |
US7231832B2 (en) * | 2004-09-13 | 2007-06-19 | United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | System and method for detecting cracks and their location |
US7089797B2 (en) | 2004-10-18 | 2006-08-15 | Silverbrook Research Pty Ltd | Temperature insensitive pressure sensor |
US7089798B2 (en) * | 2004-10-18 | 2006-08-15 | Silverbrook Research Pty Ltd | Pressure sensor with thin membrane |
US7089790B2 (en) * | 2004-10-18 | 2006-08-15 | Silverbrook Research Pty Ltd | Pressure sensor with laminated membrane |
US6968744B1 (en) * | 2004-10-18 | 2005-11-29 | Silverbrook Research Pty Ltd | Capacitative pressure sensor with close electrodes |
US7093494B2 (en) * | 2004-10-18 | 2006-08-22 | Silverbrook Research Pty Ltd | Micro-electromechanical pressure sensor |
US7194901B2 (en) * | 2004-10-18 | 2007-03-27 | Silverbrook Research Pty Ltd | Pressure sensor with apertured membrane guard |
US7159467B2 (en) * | 2004-10-18 | 2007-01-09 | Silverbrook Research Pty Ltd | Pressure sensor with conductive ceramic membrane |
US7240560B2 (en) * | 2004-10-18 | 2007-07-10 | Silverbrook Research Pty Ltd | Pressure sensor with remote power source |
US7234357B2 (en) * | 2004-10-18 | 2007-06-26 | Silverbrook Research Pty Ltd | Wafer bonded pressure sensor |
US7121145B2 (en) * | 2004-10-18 | 2006-10-17 | Silverbrook Research Pty Ltd | Capacitative pressure sensor |
US7143652B2 (en) * | 2004-10-18 | 2006-12-05 | Silverbrook Research Pty Ltd | Pressure sensor for high acceleration environment |
EP1841688A1 (de) * | 2005-01-24 | 2007-10-10 | University College Cork-National University of Ireland, Cork | Verpackung von mikrovorrichtungen |
US7956428B2 (en) * | 2005-08-16 | 2011-06-07 | Robert Bosch Gmbh | Microelectromechanical devices and fabrication methods |
US7379792B2 (en) | 2005-09-29 | 2008-05-27 | Rosemount Inc. | Pressure transmitter with acoustic pressure sensor |
US7415886B2 (en) * | 2005-12-20 | 2008-08-26 | Rosemount Inc. | Pressure sensor with deflectable diaphragm |
JP4988217B2 (ja) * | 2006-02-03 | 2012-08-01 | 株式会社日立製作所 | Mems構造体の製造方法 |
DE102006008584A1 (de) * | 2006-02-24 | 2007-09-06 | Atmel Germany Gmbh | Fertigungsprozess für integrierte Piezo-Bauelemente |
JP4897318B2 (ja) * | 2006-03-16 | 2012-03-14 | ラピスセミコンダクタ株式会社 | ピエゾ抵抗素子及びその製造方法 |
JP5127210B2 (ja) | 2006-11-30 | 2013-01-23 | 株式会社日立製作所 | Memsセンサが混載された半導体装置 |
US8358047B2 (en) * | 2008-09-29 | 2013-01-22 | Xerox Corporation | Buried traces for sealed electrostatic membrane actuators or sensors |
US7870791B2 (en) | 2008-12-03 | 2011-01-18 | Rosemount Inc. | Method and apparatus for pressure measurement using quartz crystal |
US7954383B2 (en) * | 2008-12-03 | 2011-06-07 | Rosemount Inc. | Method and apparatus for pressure measurement using fill tube |
US8327713B2 (en) | 2008-12-03 | 2012-12-11 | Rosemount Inc. | Method and apparatus for pressure measurement using magnetic property |
JP5158442B2 (ja) * | 2009-02-27 | 2013-03-06 | 三菱電機株式会社 | 半導体圧力センサおよびその製造方法 |
DK2229967T3 (da) | 2009-03-17 | 2020-06-15 | Hoffmann La Roche | Kanylesamling og ambulant infusionssystem med en tryksensor lavet af stablede koplanare lag |
JP5092167B2 (ja) * | 2009-03-24 | 2012-12-05 | 三菱電機株式会社 | 半導体圧力センサおよびその製造方法 |
JP5216041B2 (ja) * | 2010-04-07 | 2013-06-19 | ダイキン工業株式会社 | 透明圧電シートをそれぞれ有するフレーム付透明圧電シート、タッチパネル、および電子装置 |
US8132464B2 (en) | 2010-07-12 | 2012-03-13 | Rosemount Inc. | Differential pressure transmitter with complimentary dual absolute pressure sensors |
US8703517B2 (en) * | 2010-10-29 | 2014-04-22 | Denso Corporation | Method of Manufacturing a Semiconductor Device Including Removing a Reformed Layer |
DE102010062622A1 (de) * | 2010-12-08 | 2012-06-14 | Ifm Electronic Gmbh | Verfahren zur Selbstüberwachung einer keramischen Druckmesszelle eines kapazitiven Drucksensors und eine Auswerteschaltung zur Durchführung des Verfahrens |
DE102012200191A1 (de) * | 2012-01-09 | 2013-07-11 | Ifm Electronic Gmbh | Kapazitiver Drucksensor |
JP2013156066A (ja) | 2012-01-27 | 2013-08-15 | Wacom Co Ltd | 静電容量方式圧力センシング半導体デバイス |
JP5892595B2 (ja) | 2012-02-06 | 2016-03-23 | 株式会社ワコム | 位置指示器 |
US8752433B2 (en) | 2012-06-19 | 2014-06-17 | Rosemount Inc. | Differential pressure transmitter with pressure sensor |
US9200973B2 (en) | 2012-06-28 | 2015-12-01 | Intel Corporation | Semiconductor package with air pressure sensor |
US9429427B2 (en) | 2012-12-19 | 2016-08-30 | Intel Corporation | Inductive inertial sensor architecture and fabrication in packaging build-up layers |
DE102013217726B4 (de) * | 2013-09-05 | 2021-07-29 | Robert Bosch Gmbh | Mikromechanisches Bauteil für eine kapazitive Sensorvorrichtung und Herstellungsverfahren für ein mikromechanisches Bauteil für eine kapazitive Sensorvorrichtung |
JP6119615B2 (ja) | 2014-01-08 | 2017-04-26 | 三菱電機株式会社 | 半導体装置の製造方法 |
US9505607B2 (en) * | 2015-03-27 | 2016-11-29 | Intel Corporation | Methods of forming sensor integrated packages and structures formed thereby |
US10358340B2 (en) * | 2016-04-28 | 2019-07-23 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits having shielded MEMS devices and methods for fabricating shielded MEMS devices |
JP7176986B2 (ja) * | 2018-03-29 | 2022-11-22 | 旭化成株式会社 | 表面応力センサ、表面応力センサの検査方法、表面応力センサの製造方法 |
RU2745007C2 (ru) * | 2020-03-16 | 2021-03-18 | Общество С Ограниченной Ответственностью "Оптосенс" | Мембранный датчик давления |
DE102020113760B3 (de) | 2020-05-20 | 2021-11-04 | Infineon Technologies Ag | MEMS-Vorrichtungen mit Stützstrukturen und zugehörige Herstellungsverfahren |
DE102020214757A1 (de) * | 2020-11-25 | 2022-05-25 | Robert Bosch Gesellschaft mit beschränkter Haftung | Sensorvorrichtung und Verfahren zum Detektieren eines Innendrucks und/oder einer Änderung des Innendrucks in einem gasdicht abgeschlossenen Innenvolumen einer Gehäusekomponente |
US20230067539A1 (en) * | 2021-08-27 | 2023-03-02 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor structure and formation thereof |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4665610A (en) * | 1985-04-22 | 1987-05-19 | Stanford University | Method of making a semiconductor transducer having multiple level diaphragm structure |
WO1994017383A1 (de) | 1993-01-19 | 1994-08-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Drucksensor |
JP2991014B2 (ja) * | 1993-10-08 | 1999-12-20 | 三菱電機株式会社 | 圧力センサ |
JPH09257618A (ja) | 1996-03-26 | 1997-10-03 | Toyota Central Res & Dev Lab Inc | 静電容量型圧力センサおよびその製造方法 |
JP3314631B2 (ja) | 1996-10-09 | 2002-08-12 | 横河電機株式会社 | 振動式トランスデューサとその製造方法 |
FR2762389B1 (fr) | 1997-04-17 | 1999-05-21 | Commissariat Energie Atomique | Microsysteme a membrane souple pour capteur de pression et procede de realisation |
JPH1131825A (ja) * | 1997-07-10 | 1999-02-02 | Denso Corp | 半導体力学量センサの製造方法 |
US6388279B1 (en) * | 1997-06-11 | 2002-05-14 | Denso Corporation | Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof |
JP3386336B2 (ja) | 1997-06-24 | 2003-03-17 | 株式会社日立製作所 | 静電容量式圧力センサ及びその製造方法 |
US6167761B1 (en) * | 1998-03-31 | 2001-01-02 | Hitachi, Ltd. And Hitachi Car Engineering Co., Ltd. | Capacitance type pressure sensor with capacitive elements actuated by a diaphragm |
-
1999
- 1999-08-20 US US09/936,480 patent/US6892582B1/en not_active Expired - Fee Related
- 1999-08-20 EP EP99938551A patent/EP1207378B1/de not_active Expired - Lifetime
- 1999-08-20 DE DE69936794T patent/DE69936794T2/de not_active Expired - Fee Related
- 1999-08-20 WO PCT/JP1999/004485 patent/WO2001014842A1/ja active IP Right Grant
-
2005
- 2005-02-04 US US11/049,872 patent/US20050132814A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP1207378A1 (de) | 2002-05-22 |
US6892582B1 (en) | 2005-05-17 |
EP1207378A4 (de) | 2002-11-13 |
EP1207378B1 (de) | 2007-08-08 |
WO2001014842A1 (fr) | 2001-03-01 |
US20050132814A1 (en) | 2005-06-23 |
DE69936794T2 (de) | 2008-04-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |