DE69933806D1 - Vorrichtung zur Wärmebehandlung eines Substrats und Verfahren zur Trennung des Substrats von der Vorrichtung - Google Patents

Vorrichtung zur Wärmebehandlung eines Substrats und Verfahren zur Trennung des Substrats von der Vorrichtung

Info

Publication number
DE69933806D1
DE69933806D1 DE69933806T DE69933806T DE69933806D1 DE 69933806 D1 DE69933806 D1 DE 69933806D1 DE 69933806 T DE69933806 T DE 69933806T DE 69933806 T DE69933806 T DE 69933806T DE 69933806 D1 DE69933806 D1 DE 69933806D1
Authority
DE
Germany
Prior art keywords
substrate
separating
heat treating
treating
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69933806T
Other languages
English (en)
Other versions
DE69933806T2 (de
Inventor
Yasuyuki Satou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC LCD Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC LCD Technologies Ltd filed Critical NEC LCD Technologies Ltd
Application granted granted Critical
Publication of DE69933806D1 publication Critical patent/DE69933806D1/de
Publication of DE69933806T2 publication Critical patent/DE69933806T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69933806T 1998-03-05 1999-03-04 Vorrichtung zur Wärmebehandlung eines Substrats und Verfahren zur Trennung des Substrats von der Vorrichtung Expired - Lifetime DE69933806T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5324398 1998-03-05
JP05324398A JP3374743B2 (ja) 1998-03-05 1998-03-05 基板熱処理装置及び同装置からの基板の分離方法

Publications (2)

Publication Number Publication Date
DE69933806D1 true DE69933806D1 (de) 2006-12-14
DE69933806T2 DE69933806T2 (de) 2007-08-30

Family

ID=12937364

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69933806T Expired - Lifetime DE69933806T2 (de) 1998-03-05 1999-03-04 Vorrichtung zur Wärmebehandlung eines Substrats und Verfahren zur Trennung des Substrats von der Vorrichtung

Country Status (6)

Country Link
US (1) US6051815A (de)
EP (1) EP0940843B1 (de)
JP (1) JP3374743B2 (de)
KR (1) KR100341158B1 (de)
DE (1) DE69933806T2 (de)
TW (1) TW413847B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002064132A (ja) * 2000-08-22 2002-02-28 Tokyo Electron Ltd 被処理体の受け渡し方法、被処理体の載置機構及びプローブ装置
US6437296B1 (en) * 2000-12-21 2002-08-20 Lg. Philips Lcd Co. Ltd. Alignment apparatus of the substrate for LCD
KR100378568B1 (ko) * 2000-12-23 2003-03-29 태화일렉트론(주) 액정표시기 그라스의 다단식 탈수 베이크 및 프리베이크용 플레이트 구조
US6432207B1 (en) * 2001-03-07 2002-08-13 Promos Technologies Inc. Method and structure for baking a wafer
US6776849B2 (en) 2002-03-15 2004-08-17 Asm America, Inc. Wafer holder with peripheral lift ring
US20040096636A1 (en) * 2002-11-18 2004-05-20 Applied Materials, Inc. Lifting glass substrate without center lift pins
JP3989384B2 (ja) * 2003-02-07 2007-10-10 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US20060193365A1 (en) * 2005-02-25 2006-08-31 Honeywell International Spacer for spacing preforms in a furnace and method for spacing preforms in a furnace using same
US20100212832A1 (en) * 2005-12-28 2010-08-26 Sharp Kabushiki Kaisha Stage device and plasma treatment apparatus
JP4294661B2 (ja) 2006-07-26 2009-07-15 国立大学法人東北大学 基板ステージ、熱処理装置および基板ステージの製造方法
NL2003380A (en) * 2008-10-17 2010-04-20 Asml Netherlands Bv Imprint lithography apparatus and method.
NL2009689A (en) * 2011-12-01 2013-06-05 Asml Netherlands Bv Support, lithographic apparatus and device manufacturing method.
US10460978B2 (en) * 2017-03-08 2019-10-29 Lam Research Corporation Boltless substrate support assembly

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5226056A (en) * 1989-01-10 1993-07-06 Nihon Shinku Gijutsu Kabushiki Kaisha Plasma ashing method and apparatus therefor
JPH04162422A (ja) * 1990-10-24 1992-06-05 Fujitsu Ltd 半導体装置の製造装置
JP3153372B2 (ja) * 1992-02-26 2001-04-09 東京エレクトロン株式会社 基板処理装置
JP3291832B2 (ja) * 1992-05-19 2002-06-17 株式会社ニコン 基板保持部材、および、露光装置
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5738165A (en) * 1993-05-07 1998-04-14 Nikon Corporation Substrate holding apparatus
US5591269A (en) * 1993-06-24 1997-01-07 Tokyo Electron Limited Vacuum processing apparatus
JP3158829B2 (ja) * 1993-12-31 2001-04-23 東京エレクトロン株式会社 熱処理装置及び熱処理方法
TW254030B (en) * 1994-03-18 1995-08-11 Anelva Corp Mechanic escape mechanism for substrate
JP3457477B2 (ja) * 1995-09-06 2003-10-20 日本碍子株式会社 静電チャック
JP3005461B2 (ja) * 1995-11-24 2000-01-31 日本電気株式会社 静電チャック
JPH09172055A (ja) * 1995-12-19 1997-06-30 Fujitsu Ltd 静電チャック及びウエハの吸着方法
US5854468A (en) * 1996-01-25 1998-12-29 Brooks Automation, Inc. Substrate heating apparatus with cantilevered lifting arm
US5904779A (en) * 1996-12-19 1999-05-18 Lam Research Corporation Wafer electrical discharge control by wafer lifter system

Also Published As

Publication number Publication date
DE69933806T2 (de) 2007-08-30
EP0940843B1 (de) 2006-11-02
JP3374743B2 (ja) 2003-02-10
US6051815A (en) 2000-04-18
TW413847B (en) 2000-12-01
JPH11251257A (ja) 1999-09-17
KR100341158B1 (ko) 2002-06-20
EP0940843A3 (de) 2002-10-23
EP0940843A2 (de) 1999-09-08
KR19990077634A (ko) 1999-10-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC CORP., TOKYO, JP

R082 Change of representative

Ref document number: 940843

Country of ref document: EP

Representative=s name: MUELLER-BORE & PARTNER, PATENTANWAELTE, EUROPEAN P