DE69929632D1 - Verfahren zum schreiben und lesen eines informationsträgers bestehend aus einem material, das eine abfolge von materialbereichen mit ersten und zweiten physikalischen zuständen aufweist - Google Patents

Verfahren zum schreiben und lesen eines informationsträgers bestehend aus einem material, das eine abfolge von materialbereichen mit ersten und zweiten physikalischen zuständen aufweist

Info

Publication number
DE69929632D1
DE69929632D1 DE69929632T DE69929632T DE69929632D1 DE 69929632 D1 DE69929632 D1 DE 69929632D1 DE 69929632 T DE69929632 T DE 69929632T DE 69929632 T DE69929632 T DE 69929632T DE 69929632 D1 DE69929632 D1 DE 69929632D1
Authority
DE
Germany
Prior art keywords
writing
reading
sequence
information carrier
physical states
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69929632T
Other languages
English (en)
Other versions
DE69929632T2 (de
Inventor
Didier Saluel
Bernard Bechevet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE69929632D1 publication Critical patent/DE69929632D1/de
Publication of DE69929632T2 publication Critical patent/DE69929632T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K7/00—Methods or arrangements for sensing record carriers, e.g. for reading patterns
    • G06K7/08—Methods or arrangements for sensing record carriers, e.g. for reading patterns by means detecting the change of an electrostatic or magnetic field, e.g. by detecting change of capacitance between electrodes
    • G06K7/081—Methods or arrangements for sensing record carriers, e.g. for reading patterns by means detecting the change of an electrostatic or magnetic field, e.g. by detecting change of capacitance between electrodes electrostatic, e.g. by detecting the charge of capacitance between electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/002—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by perturbation of the physical or electrical structure
    • G11B11/007—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by perturbation of the physical or electrical structure with reproducing by means directly associated with the tip of a microscopic electrical probe as defined in G11B9/14
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/08—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by electric charge or by variation of electric resistance or capacitance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/02—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using ferroelectric record carriers; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1409—Heads

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Artificial Intelligence (AREA)
  • Optical Recording Or Reproduction (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Semiconductor Memories (AREA)
DE69929632T 1998-11-17 1999-11-16 Verfahren zum schreiben und lesen eines informationsträgers bestehend aus einem material, das eine abfolge von materialbereichen mit ersten und zweiten physikalischen zuständen aufweist Expired - Lifetime DE69929632T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR9814404A FR2786005B1 (fr) 1998-11-17 1998-11-17 Procede d'ecriture et de lecture d'un support d'informations comprenant un materiau avec une succession de zones presentant respectivement un premier et un deuxieme etats physiques
FR9814404 1998-11-17
PCT/FR1999/002804 WO2000030086A1 (fr) 1998-11-17 1999-11-16 Procede d'ecriture et de lecture d'un support d'informations comprenant un materiau avec une succession de zones presentant respectivement un premier et un deuxieme etats physiques

Publications (2)

Publication Number Publication Date
DE69929632D1 true DE69929632D1 (de) 2006-04-13
DE69929632T2 DE69929632T2 (de) 2006-11-09

Family

ID=9532805

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69929632T Expired - Lifetime DE69929632T2 (de) 1998-11-17 1999-11-16 Verfahren zum schreiben und lesen eines informationsträgers bestehend aus einem material, das eine abfolge von materialbereichen mit ersten und zweiten physikalischen zuständen aufweist

Country Status (6)

Country Link
US (1) US6392934B1 (de)
EP (1) EP1131820B1 (de)
JP (1) JP4642236B2 (de)
DE (1) DE69929632T2 (de)
FR (1) FR2786005B1 (de)
WO (1) WO2000030086A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100418881B1 (ko) * 2001-05-23 2004-02-19 엘지전자 주식회사 Ａｆｍ 용 고감도 압전저항 캔틸레버
JP4103136B2 (ja) 2003-04-23 2008-06-18 船井電機株式会社 データ記録再生装置
FR2856184B1 (fr) * 2003-06-13 2008-04-11 Commissariat Energie Atomique Dispositif d'enregistrement de donnees comportant des micro-pointes et un support d'enregistrement
KR100519774B1 (ko) * 2003-09-06 2005-10-07 삼성전자주식회사 프로브 기술을 이용한 저장 기기의 데이터 기록방법
KR100552701B1 (ko) * 2003-11-24 2006-02-20 삼성전자주식회사 전하-쌍극자가 결합된 정보 저장 매체 및 그 제조 방법
US7002820B2 (en) * 2004-06-17 2006-02-21 Hewlett-Packard Development Company, L.P. Semiconductor storage device
KR100590564B1 (ko) * 2004-10-29 2006-06-19 삼성전자주식회사 이방성 전도층을 구비하는 강유전체 기록 매체, 이를구비하는 기록 장치 및 그 기록 방법
KR100695139B1 (ko) 2005-02-07 2007-03-14 삼성전자주식회사 강유전체 기록 매체 및 그의 기록 방법
US7185440B2 (en) * 2005-07-18 2007-03-06 Seagate Technology Llc Sensing contact probe
US7612882B2 (en) * 2006-10-20 2009-11-03 Hewlett-Packard Development Company, L.P. Optical gratings, lithography tools including such optical gratings and methods for using same for alignment
US7848135B2 (en) * 2008-09-19 2010-12-07 International Business Machines Corporation Piezo-driven non-volatile memory cell with hysteretic resistance
US8159854B2 (en) * 2009-06-30 2012-04-17 International Business Machines Corporation Piezo-effect transistor device and applications
US8247947B2 (en) * 2009-12-07 2012-08-21 International Business Machines Corporation Coupling piezoelectric material generated stresses to devices formed in integrated circuits
US9058868B2 (en) 2012-12-19 2015-06-16 International Business Machines Corporation Piezoelectronic memory
US9941472B2 (en) 2014-03-10 2018-04-10 International Business Machines Corporation Piezoelectronic device with novel force amplification
US9251884B2 (en) 2014-03-24 2016-02-02 International Business Machines Corporation Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2157876B (en) * 1984-04-09 1988-09-21 Victor Company Of Japan Capacitance recording disc
NL8901345A (nl) * 1989-05-29 1990-12-17 Philips Nv Werkwijze en inrichting voor het optekenen van signalen op een registratiedrager, alsmede een meetwerkwijze en meetinrichting voor toepassing in de optekenwerkwijze en optekeninrichting, alsmede een registratiedrager.
DE4041271C2 (de) * 1989-12-25 1998-10-08 Toshiba Kawasaki Kk Halbleitervorrichtung mit einem ferroelektrischen Kondensator
US5635267A (en) * 1992-09-17 1997-06-03 Matsushita Electric Industrial Co., Ltd. Optical information recording medium of phase change type having variably grooved tracks depending on their radial locations
JPH07105580A (ja) * 1993-10-06 1995-04-21 Hitachi Ltd 情報記録装置
JPH0831027A (ja) * 1994-07-08 1996-02-02 Matsushita Electric Ind Co Ltd 強誘電体記録装置
JP3576644B2 (ja) * 1995-06-19 2004-10-13 キヤノン株式会社 情報記録装置のプローブ及び記録媒体、並びにこれらを用いた情報記録方法
JPH1040599A (ja) * 1996-07-25 1998-02-13 Tdk Corp 記録媒体および記録再生方法
US5985404A (en) * 1996-08-28 1999-11-16 Tdk Corporation Recording medium, method of making, and information processing apparatus
FR2757992B1 (fr) * 1996-12-26 1999-01-29 Commissariat Energie Atomique Support d'enregistrement d'informations, dispositif de lecture de ce support et procedes de mise en oeuvre de ce dispositif
US6078468A (en) * 1997-05-01 2000-06-20 Fiske; Orlo James Data storage and/or retrieval methods and apparatuses and components thereof
US5870338A (en) * 1997-05-19 1999-02-09 Micron Technology, Inc. Circuit and method for reading and writing data in a memory device

Also Published As

Publication number Publication date
FR2786005A1 (fr) 2000-05-19
FR2786005B1 (fr) 2002-04-12
DE69929632T2 (de) 2006-11-09
WO2000030086A1 (fr) 2000-05-25
EP1131820B1 (de) 2006-01-25
EP1131820A1 (de) 2001-09-12
JP4642236B2 (ja) 2011-03-02
JP2002530789A (ja) 2002-09-17
US6392934B1 (en) 2002-05-21

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