DE69921607D1 - Verfahren zum Entfernen von Kurzschluss-Abschnitten einer Solarzelle - Google Patents

Verfahren zum Entfernen von Kurzschluss-Abschnitten einer Solarzelle

Info

Publication number
DE69921607D1
DE69921607D1 DE69921607T DE69921607T DE69921607D1 DE 69921607 D1 DE69921607 D1 DE 69921607D1 DE 69921607 T DE69921607 T DE 69921607T DE 69921607 T DE69921607 T DE 69921607T DE 69921607 D1 DE69921607 D1 DE 69921607D1
Authority
DE
Germany
Prior art keywords
solar cell
pseudo
voltage
cell element
wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69921607T
Other languages
English (en)
Other versions
DE69921607T2 (de
Inventor
Katsuhiko Hayashi
Masataka Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kaneka Corp
Original Assignee
Kaneka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11079077A external-priority patent/JP3050546B1/ja
Priority claimed from JP11079078A external-priority patent/JP3049241B1/ja
Application filed by Kaneka Corp filed Critical Kaneka Corp
Application granted granted Critical
Publication of DE69921607D1 publication Critical patent/DE69921607D1/de
Publication of DE69921607T2 publication Critical patent/DE69921607T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00—Batteries: thermoelectric and photoelectric
    • Y10S136/29—Testing, calibrating, treating, e.g. aging

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
DE69921607T 1999-03-24 1999-07-01 Verfahren zum Entfernen von Kurzschluss-Abschnitten einer Solarzelle Expired - Lifetime DE69921607T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP7907899 1999-03-24
JP11079077A JP3050546B1 (ja) 1999-03-24 1999-03-24 太陽電池の短絡部除去方法
JP7907799 1999-03-24
JP11079078A JP3049241B1 (ja) 1999-03-24 1999-03-24 太陽電池の短絡部除去方法

Publications (2)

Publication Number Publication Date
DE69921607D1 true DE69921607D1 (de) 2004-12-09
DE69921607T2 DE69921607T2 (de) 2005-11-10

Family

ID=26420146

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69940618T Expired - Lifetime DE69940618D1 (de) 1999-03-24 1999-07-01 Verfahren zum Entfernen von Kurzschluss-Abschnitten einer Solarzelle
DE69921607T Expired - Lifetime DE69921607T2 (de) 1999-03-24 1999-07-01 Verfahren zum Entfernen von Kurzschluss-Abschnitten einer Solarzelle

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69940618T Expired - Lifetime DE69940618D1 (de) 1999-03-24 1999-07-01 Verfahren zum Entfernen von Kurzschluss-Abschnitten einer Solarzelle

Country Status (6)

Country Link
US (1) US6228662B1 (de)
EP (2) EP1039553B1 (de)
AT (2) ATE426250T1 (de)
AU (1) AU763332B2 (de)
DE (2) DE69940618D1 (de)
ES (2) ES2232083T3 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU766466B2 (en) * 1999-05-14 2003-10-16 Kaneka Corporation Reverse biasing apparatus for solar battery module
JP2004241618A (ja) * 2003-02-06 2004-08-26 Canon Inc 光起電力素子の製造方法
JP2006013403A (ja) * 2004-06-29 2006-01-12 Sanyo Electric Co Ltd 太陽電池、太陽電池モジュール、その製造方法およびその修復方法
JP5062684B2 (ja) * 2008-02-13 2012-10-31 シャープ株式会社 薄膜光電変換モジュールの製造方法および製造装置
CN101933155B (zh) * 2008-03-31 2012-12-12 株式会社爱发科 太阳能电池的制造方法
CN102725859B (zh) * 2009-02-04 2016-01-27 应用材料公司 太阳能生产线的计量与检测套组
TWI387113B (zh) * 2009-02-05 2013-02-21 Nexpower Technology Corp 薄膜太陽能電池模組及其修補方法
TWI419350B (zh) * 2009-02-06 2013-12-11 Ind Tech Res Inst 太陽能電池模組修復裝置與修復方法
JP5476641B2 (ja) 2009-09-03 2014-04-23 株式会社日本マイクロニクス 電池短絡部除去装置及び方法、並びに、電池短絡部除去電圧決定装置及び方法
US8164818B2 (en) 2010-11-08 2012-04-24 Soladigm, Inc. Electrochromic window fabrication methods
US20120288968A1 (en) * 2011-05-12 2012-11-15 Ming-Teng Hsieh Method for repairing a semiconductor structure having a current-leakage issue
US9507232B2 (en) 2011-09-14 2016-11-29 View, Inc. Portable defect mitigator for electrochromic windows
US9885934B2 (en) 2011-09-14 2018-02-06 View, Inc. Portable defect mitigators for electrochromic windows
US9341912B2 (en) 2012-03-13 2016-05-17 View, Inc. Multi-zone EC windows
ES2683188T3 (es) 2012-03-13 2018-09-25 View, Inc. Mitigación estenopeica para dispositivos ópticos
EP2849915B1 (de) 2012-05-18 2023-11-01 View, Inc. Umschreibung von defekten in optischen vorrichtungen
CN103456831B (zh) * 2012-06-01 2015-11-18 上海宇航系统工程研究所 低轨等离子体环境高压太阳电池阵弧光放电抑制方法
ITMI20130482A1 (it) * 2013-03-29 2014-09-30 St Microelectronics Srl Dispositivo elettronico integrato per il monitoraggio di pressione all'interno di una struttura solida
GB2565337A (en) * 2017-08-10 2019-02-13 Power Roll Ltd Energy storage
DE102018001057A1 (de) * 2018-02-07 2019-08-08 Aic Hörmann Gmbh & Co. Kg Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Ermitterschicht einer Siliziumsolarzelle

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166918A (en) 1978-07-19 1979-09-04 Rca Corporation Method of removing the effects of electrical shorts and shunts created during the fabrication process of a solar cell
JPS5683981A (en) 1979-12-13 1981-07-08 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture
US4464823A (en) 1982-10-21 1984-08-14 Energy Conversion Devices, Inc. Method for eliminating short and latent short circuit current paths in photovoltaic devices
JPS5994468A (ja) 1982-11-19 1984-05-31 Sumitomo Electric Ind Ltd 薄膜電子装置の短絡部の除去方法
AU2042183A (en) 1983-08-03 1985-02-07 Energy Conversion Devices Inc. Eliminating short circuits in photovoltaic devices
JPS6185873A (ja) 1984-10-04 1986-05-01 Fuji Electric Co Ltd 薄膜半導体素子の製造方法
AU580903B2 (en) 1986-01-29 1989-02-02 Semiconductor Energy Laboratory Co. Ltd. Method for manufacturing photoelectric conversion devices
JPS6341081A (ja) 1986-08-07 1988-02-22 Fuji Electric Co Ltd 薄膜半導体装置の製造方法
JPS6388869A (ja) 1986-10-01 1988-04-19 Kanegafuchi Chem Ind Co Ltd アモルファス太陽電池のピンホール消滅装置
JPH0323677A (ja) 1989-06-20 1991-01-31 Semiconductor Energy Lab Co Ltd 半導体装置のリペア方法
US5281541A (en) * 1990-09-07 1994-01-25 Canon Kabushiki Kaisha Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method
JP3740618B2 (ja) 1996-06-17 2006-02-01 株式会社カネカ 太陽電池の短絡部除去方法及び該短絡部除去装置
JP3755551B2 (ja) 1996-06-25 2006-03-15 株式会社カネカ 太陽電池の短絡部除去方法及び該短絡部除去装置

Also Published As

Publication number Publication date
DE69940618D1 (de) 2009-04-30
EP1494294B1 (de) 2009-03-18
ATE426250T1 (de) 2009-04-15
ATE281699T1 (de) 2004-11-15
DE69921607T2 (de) 2005-11-10
ES2232083T3 (es) 2005-05-16
AU763332B2 (en) 2003-07-17
EP1494294A2 (de) 2005-01-05
ES2324100T3 (es) 2009-07-30
EP1039553A3 (de) 2002-04-10
AU3684299A (en) 2000-09-28
EP1039553A2 (de) 2000-09-27
EP1494294A3 (de) 2006-04-05
EP1039553B1 (de) 2004-11-03
US6228662B1 (en) 2001-05-08

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