DE69900918T2 - Suszeptor für einen zylindrischen reaktor - Google Patents
Suszeptor für einen zylindrischen reaktorInfo
- Publication number
- DE69900918T2 DE69900918T2 DE69900918T DE69900918T DE69900918T2 DE 69900918 T2 DE69900918 T2 DE 69900918T2 DE 69900918 T DE69900918 T DE 69900918T DE 69900918 T DE69900918 T DE 69900918T DE 69900918 T2 DE69900918 T2 DE 69900918T2
- Authority
- DE
- Germany
- Prior art keywords
- susceptor
- cylindrical reactor
- reactor
- cylindrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/107,728 US6129048A (en) | 1998-06-30 | 1998-06-30 | Susceptor for barrel reactor |
PCT/US1999/014388 WO2000000664A1 (en) | 1998-06-30 | 1999-06-24 | Susceptor for barrel reactor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69900918D1 DE69900918D1 (de) | 2002-03-28 |
DE69900918T2 true DE69900918T2 (de) | 2002-11-28 |
Family
ID=22318145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69900918T Expired - Fee Related DE69900918T2 (de) | 1998-06-30 | 1999-06-24 | Suszeptor für einen zylindrischen reaktor |
Country Status (8)
Country | Link |
---|---|
US (1) | US6129048A (de) |
EP (1) | EP1099007B1 (de) |
JP (1) | JP2002519857A (de) |
KR (1) | KR20010071661A (de) |
CN (1) | CN1307647A (de) |
DE (1) | DE69900918T2 (de) |
TW (1) | TW460603B (de) |
WO (1) | WO2000000664A1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2928210B1 (ja) * | 1998-01-30 | 1999-08-03 | 九州日本電気株式会社 | 半導体基板の不純物拡散処理方法および半導体製造装置 |
KR20030002070A (ko) * | 2001-06-30 | 2003-01-08 | 삼성전자 주식회사 | 원심력을 이용한 비점착 웨이퍼 건조방법 및 장치 |
US7462246B2 (en) * | 2005-04-15 | 2008-12-09 | Memc Electronic Materials, Inc. | Modified susceptor for barrel reactor |
US20080314319A1 (en) * | 2007-06-19 | 2008-12-25 | Memc Electronic Materials, Inc. | Susceptor for improving throughput and reducing wafer damage |
US8404049B2 (en) * | 2007-12-27 | 2013-03-26 | Memc Electronic Materials, Inc. | Epitaxial barrel susceptor having improved thickness uniformity |
US20100098519A1 (en) * | 2008-10-17 | 2010-04-22 | Memc Electronic Materials, Inc. | Support for a semiconductor wafer in a high temperature environment |
US8298629B2 (en) | 2009-02-25 | 2012-10-30 | Crystal Solar Incorporated | High throughput multi-wafer epitaxial reactor |
US8673081B2 (en) | 2009-02-25 | 2014-03-18 | Crystal Solar, Inc. | High throughput multi-wafer epitaxial reactor |
TW201122148A (en) * | 2009-12-24 | 2011-07-01 | Hon Hai Prec Ind Co Ltd | Chemical vapor deposition device |
US9441295B2 (en) * | 2010-05-14 | 2016-09-13 | Solarcity Corporation | Multi-channel gas-delivery system |
CN107022789B (zh) | 2011-05-27 | 2021-03-12 | 斯瓦高斯技术股份有限公司 | 在外延反应器中的硅衬底上外延沉积硅晶片的方法 |
US10184193B2 (en) | 2015-05-18 | 2019-01-22 | Globalwafers Co., Ltd. | Epitaxy reactor and susceptor system for improved epitaxial wafer flatness |
US20160359080A1 (en) | 2015-06-07 | 2016-12-08 | Solarcity Corporation | System, method and apparatus for chemical vapor deposition |
US9748434B1 (en) | 2016-05-24 | 2017-08-29 | Tesla, Inc. | Systems, method and apparatus for curing conductive paste |
US9954136B2 (en) | 2016-08-03 | 2018-04-24 | Tesla, Inc. | Cassette optimized for an inline annealing system |
US10115856B2 (en) | 2016-10-31 | 2018-10-30 | Tesla, Inc. | System and method for curing conductive paste using induction heating |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3806360A (en) * | 1966-12-15 | 1974-04-23 | Western Electric Co | Methods for heating and/or coating articles |
US3675619A (en) * | 1969-02-25 | 1972-07-11 | Monsanto Co | Apparatus for production of epitaxial films |
US5373806A (en) * | 1985-05-20 | 1994-12-20 | Applied Materials, Inc. | Particulate-free epitaxial process |
US4728389A (en) * | 1985-05-20 | 1988-03-01 | Applied Materials, Inc. | Particulate-free epitaxial process |
US4823736A (en) * | 1985-07-22 | 1989-04-25 | Air Products And Chemicals, Inc. | Barrel structure for semiconductor epitaxial reactor |
DE3707672A1 (de) * | 1987-03-10 | 1988-09-22 | Sitesa Sa | Epitaxieanlage |
US5116181A (en) * | 1989-05-19 | 1992-05-26 | Applied Materials, Inc. | Robotically loaded epitaxial deposition apparatus |
DE69126724T2 (de) * | 1990-03-19 | 1998-01-15 | Toshiba Kawasaki Kk | Vorrichtung zur Dampfphasenabscheidung |
US5298107A (en) * | 1992-02-27 | 1994-03-29 | Applied Materials, Inc. | Processing method for growing thick films |
US5288364A (en) * | 1992-08-20 | 1994-02-22 | Motorola, Inc. | Silicon epitaxial reactor and control method |
JP2785614B2 (ja) * | 1992-09-28 | 1998-08-13 | 信越半導体株式会社 | シリンダー型エピタキシャル層成長装置 |
JP2732393B2 (ja) * | 1992-09-28 | 1998-03-30 | 信越半導体株式会社 | シリンダー型シリコンエピタキシャル層成長装置 |
US5589224A (en) * | 1992-09-30 | 1996-12-31 | Applied Materials, Inc. | Apparatus for full wafer deposition |
DE4305749A1 (de) * | 1993-02-25 | 1994-09-01 | Leybold Ag | Vorrichtung zum Halten von flachen, kreisscheibenförmigen Substraten in der Vakuumkammer einer Beschichtungs- oder Ätzanlage |
US5439523A (en) * | 1994-02-14 | 1995-08-08 | Memc Electronic Materials, Inc. | Device for suppressing particle splash onto a semiconductor wafer |
US5518549A (en) * | 1995-04-18 | 1996-05-21 | Memc Electronic Materials, Inc. | Susceptor and baffle therefor |
-
1998
- 1998-06-30 US US09/107,728 patent/US6129048A/en not_active Expired - Lifetime
-
1999
- 1999-06-24 EP EP99933576A patent/EP1099007B1/de not_active Expired - Lifetime
- 1999-06-24 WO PCT/US1999/014388 patent/WO2000000664A1/en not_active Application Discontinuation
- 1999-06-24 DE DE69900918T patent/DE69900918T2/de not_active Expired - Fee Related
- 1999-06-24 CN CN99808069A patent/CN1307647A/zh active Pending
- 1999-06-24 JP JP2000557011A patent/JP2002519857A/ja not_active Withdrawn
- 1999-06-24 KR KR1020007014898A patent/KR20010071661A/ko not_active Application Discontinuation
- 1999-07-23 TW TW088111089A patent/TW460603B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW460603B (en) | 2001-10-21 |
WO2000000664A9 (en) | 2000-05-18 |
KR20010071661A (ko) | 2001-07-31 |
CN1307647A (zh) | 2001-08-08 |
EP1099007A1 (de) | 2001-05-16 |
WO2000000664A1 (en) | 2000-01-06 |
US6129048A (en) | 2000-10-10 |
DE69900918D1 (de) | 2002-03-28 |
EP1099007B1 (de) | 2002-02-20 |
JP2002519857A (ja) | 2002-07-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |