DE69900076T2 - Verfahren zur Herstellung von fluorierten diamantartigen Beschichtungen - Google Patents

Verfahren zur Herstellung von fluorierten diamantartigen Beschichtungen

Info

Publication number
DE69900076T2
DE69900076T2 DE69900076T DE69900076T DE69900076T2 DE 69900076 T2 DE69900076 T2 DE 69900076T2 DE 69900076 T DE69900076 T DE 69900076T DE 69900076 T DE69900076 T DE 69900076T DE 69900076 T2 DE69900076 T2 DE 69900076T2
Authority
DE
Germany
Prior art keywords
coatings
production
fluorinated diamond
fluorinated
diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69900076T
Other languages
English (en)
Other versions
DE69900076D1 (de
Inventor
Pai Chien-Shing
Wei Zhu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Application granted granted Critical
Publication of DE69900076D1 publication Critical patent/DE69900076D1/de
Publication of DE69900076T2 publication Critical patent/DE69900076T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76813—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving a partial via etch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69900076T 1998-03-12 1999-03-02 Verfahren zur Herstellung von fluorierten diamantartigen Beschichtungen Expired - Lifetime DE69900076T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7772098P 1998-03-12 1998-03-12
US09/205,840 US6312766B1 (en) 1998-03-12 1998-12-04 Article comprising fluorinated diamond-like carbon and method for fabricating article

Publications (2)

Publication Number Publication Date
DE69900076D1 DE69900076D1 (de) 2001-05-17
DE69900076T2 true DE69900076T2 (de) 2001-11-15

Family

ID=26759601

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69900076T Expired - Lifetime DE69900076T2 (de) 1998-03-12 1999-03-02 Verfahren zur Herstellung von fluorierten diamantartigen Beschichtungen

Country Status (5)

Country Link
US (1) US6312766B1 (de)
EP (1) EP0942072B1 (de)
JP (1) JP3378210B2 (de)
KR (1) KR100333996B1 (de)
DE (1) DE69900076T2 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6312766B1 (en) * 1998-03-12 2001-11-06 Agere Systems Guardian Corp. Article comprising fluorinated diamond-like carbon and method for fabricating article
US6682786B1 (en) * 1999-12-07 2004-01-27 Ibm Corporation Liquid crystal display cell having liquid crystal molecules in vertical or substantially vertical alignment
CN101556948B (zh) * 2003-08-15 2012-09-19 东京毅力科创株式会社 半导体装置、半导体装置的制造方法及等离子体cvd用气体
WO2005017991A1 (ja) * 2003-08-15 2005-02-24 Tokyo Electron Limited 半導体装置、半導体装置の製造方法及びプラズマｃｖｄ用ガス
FR2859487B1 (fr) * 2003-09-04 2006-12-15 Essilor Int Procede de depot d'une couche amorphe contenant majoritairement du fluor et du carbone et dispositif convenant a sa mise en oeuvre
US20050224807A1 (en) * 2004-03-25 2005-10-13 Ravi Kramadhati V Low dielectric constant carbon films
US20050227079A1 (en) * 2004-04-13 2005-10-13 Ravi Kramadhati V Manufacture of porous diamond films
US7384693B2 (en) * 2004-04-28 2008-06-10 Intel Corporation Diamond-like carbon films with low dielectric constant and high mechanical strength
US20070269646A1 (en) * 2006-05-18 2007-11-22 Haverty Michael G Bond termination of pores in a porous diamond dielectric material
JP5244495B2 (ja) * 2008-08-06 2013-07-24 三菱重工業株式会社 回転機械用の部品
US20110081500A1 (en) * 2009-10-06 2011-04-07 Tokyo Electron Limited Method of providing stable and adhesive interface between fluorine-based low-k material and metal barrier layer
US20110081503A1 (en) * 2009-10-06 2011-04-07 Tokyo Electron Limited Method of depositing stable and adhesive interface between fluorine-based low-k material and metal barrier layer
US9224416B2 (en) 2012-04-24 2015-12-29 Seagate Technology Llc Near field transducers including nitride materials
US8427925B2 (en) 2010-02-23 2013-04-23 Seagate Technology Llc HAMR NFT materials with improved thermal stability
US9251837B2 (en) 2012-04-25 2016-02-02 Seagate Technology Llc HAMR NFT materials with improved thermal stability
KR101487709B1 (ko) * 2012-01-06 2015-01-29 주식회사 케이오씨솔루션 티오에폭시계 광학재료용 중합성 조성물과 티오에폭시계 광학재료의 제조방법
US9275833B2 (en) 2012-02-03 2016-03-01 Seagate Technology Llc Methods of forming layers
US20150166349A1 (en) * 2012-06-19 2015-06-18 Epic Ventures Inc. Method for converting poly(hydridocarbyne) into diamond-like carbon
WO2014120233A1 (en) * 2013-02-01 2014-08-07 Seagate Technology Llc Methods of forming layers
US8830800B1 (en) 2013-06-21 2014-09-09 Seagate Technology Llc Magnetic devices including film structures
US9280989B2 (en) 2013-06-21 2016-03-08 Seagate Technology Llc Magnetic devices including near field transducer
JP6038843B2 (ja) 2013-06-24 2016-12-07 シーゲイト テクノロジー エルエルシーＳｅａｇａｔｅ Ｔｅｃｈｎｏｌｏｇｙ ＬＬＣ 少なくとも１つの相互混合層を含む装置
US20140376351A1 (en) 2013-06-24 2014-12-25 Seagate Technology Llc Materials for near field transducers and near field transducers containing same
US9058824B2 (en) 2013-06-24 2015-06-16 Seagate Technology Llc Devices including a gas barrier layer
US9245573B2 (en) 2013-06-24 2016-01-26 Seagate Technology Llc Methods of forming materials for at least a portion of a NFT and NFTs formed using the same
RU2542207C2 (ru) * 2013-07-15 2015-02-20 Федеральное государственное бюджетное учреждение науки Институт физического материаловедения Сибирского отделения Российской академии наук Способ получения покрытий карбина
US9697856B2 (en) 2013-12-06 2017-07-04 Seagate Techology LLC Methods of forming near field transducers and near field transducers formed thereby
US9570098B2 (en) 2013-12-06 2017-02-14 Seagate Technology Llc Methods of forming near field transducers and near field transducers formed thereby
US9305572B2 (en) 2014-05-01 2016-04-05 Seagate Technology Llc Methods of forming portions of near field transducers (NFTS) and articles formed thereby
US9620150B2 (en) 2014-11-11 2017-04-11 Seagate Technology Llc Devices including an amorphous gas barrier layer
US9552833B2 (en) 2014-11-11 2017-01-24 Seagate Technology Llc Devices including a multilayer gas barrier layer
US9822444B2 (en) 2014-11-11 2017-11-21 Seagate Technology Llc Near-field transducer having secondary atom higher concentration at bottom of the peg
US10510364B2 (en) 2014-11-12 2019-12-17 Seagate Technology Llc Devices including a near field transducer (NFT) with nanoparticles
US20160275972A1 (en) 2015-03-22 2016-09-22 Seagate Technology Llc Devices including metal layer
WO2016191666A1 (en) 2015-05-28 2016-12-01 Seagate Technology Llc Near field transducers (nfts) including barrier layer and methods of forming
WO2016191707A1 (en) 2015-05-28 2016-12-01 Seagate Technology Llc Multipiece near field transducers (nfts)
US10458548B2 (en) * 2015-08-10 2019-10-29 Nippon Itf, Inc. Piston ring and method for manufacturing same
US9852748B1 (en) 2015-12-08 2017-12-26 Seagate Technology Llc Devices including a NFT having at least one amorphous alloy layer
RU2661876C2 (ru) * 2016-09-16 2018-07-20 Общество с ограниченной ответственностью "НаноТехЦентр" Кумуленовое вещество, способ его получения и применение
EP3626351B1 (de) * 2017-05-17 2021-01-27 Nissan Motor Co., Ltd. Zerstäuberglocke für rotationszerstäubungsbeschichtungsvorrichtung

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5949612A (en) * 1995-03-21 1999-09-07 Censtor Corp. Low friction sliding hard disk drive system
US5073785A (en) * 1990-04-30 1991-12-17 Xerox Corporation Coating processes for an ink jet printhead
US5190807A (en) * 1990-10-18 1993-03-02 Diamonex, Incorporated Abrasion wear resistant polymeric substrate product
JPH04265516A (ja) 1991-02-19 1992-09-21 Nec Corp 磁気ディスク媒体
BR9204887A (pt) * 1991-12-23 1993-06-29 Comision Nac Energ Atom Processo para formar sobre um substrato solido uma pelicula de propriedade similares as do diamante,os corpos solidos assim revestidos e a pelicula revestida assim obtida
US5846649A (en) * 1994-03-03 1998-12-08 Monsanto Company Highly durable and abrasion-resistant dielectric coatings for lenses
US5393572A (en) * 1994-07-11 1995-02-28 Southwest Research Institute Ion beam assisted method of producing a diamond like carbon coating
US5559367A (en) 1994-07-12 1996-09-24 International Business Machines Corporation Diamond-like carbon for use in VLSI and ULSI interconnect systems
CA2157257C (en) 1994-09-12 1999-08-10 Kazuhiko Endo Semiconductor device with amorphous carbon layer and method of fabricating the same
EP0751567B1 (de) 1995-06-27 2007-11-28 International Business Machines Corporation Kupferlegierungen für Chipverbindungen und Herstellungsverfahren
US6086962A (en) * 1997-07-25 2000-07-11 Diamonex, Incorporated Method for deposition of diamond-like carbon and silicon-doped diamond-like carbon coatings from a hall-current ion source
US6030904A (en) * 1997-08-21 2000-02-29 International Business Machines Corporation Stabilization of low-k carbon-based dielectrics
US6312766B1 (en) * 1998-03-12 2001-11-06 Agere Systems Guardian Corp. Article comprising fluorinated diamond-like carbon and method for fabricating article

Also Published As

Publication number Publication date
EP0942072A2 (de) 1999-09-15
JPH11330066A (ja) 1999-11-30
US6312766B1 (en) 2001-11-06
DE69900076D1 (de) 2001-05-17
KR19990077766A (ko) 1999-10-25
JP3378210B2 (ja) 2003-02-17
EP0942072B1 (de) 2001-04-11
KR100333996B1 (ko) 2002-04-24
EP0942072A3 (de) 1999-10-13

Similar Documents

Publication Publication Date Title
DE69900076D1 (de) Verfahren zur Herstellung von fluorierten diamantartigen Beschichtungen
DE69407734D1 (de) Verfahren zur Herstellung diamantartiger Beschichtungen
DE69738355D1 (de) Verfahren zur Herstellung von Beschichtungen
DE69909860D1 (de) Verfahren zur Herstellung von fluorierten Propanen
DE69418542D1 (de) Verfahren zur Herstellung funktioneller Beschichtungen
DE69609244D1 (de) Verfahren zur Herstellung diamantartiger Beschichtungen
DE69908998D1 (de) Verfahren zur Herstellung von Kohlenstoff
DE69823823D1 (de) Verfahren zur Herstellung von beschichtete structurelle Gegenstände
DE69939971D1 (de) Verfahren zur Herstellung und Überwachung von Beschichtungen
DE69905543D1 (de) Verfahren zur Herstellung von Methanol
DE69704964D1 (de) Verfahren zur Herstellung von Acryloxypropylsilane
DE59909550D1 (de) Verfahren zur Herstellung von Rollos
DE69800912T2 (de) Verfahren zur Herstellung von Ceramidverbindungen
DE59811947D1 (de) Kontinuierliches Verfahren zur Herstellung von Polyorganosiloxanen
DE59902444D1 (de) Verfahren zur Herstellung von beschichteten Kurzfasern
DE69909929D1 (de) Verfahren zur Herstellung von Methanol
DE69907770D1 (de) Verfahren zur Herstellung von modifizierten PTFE
DE69903698D1 (de) Verfahren zur Herstellung von Acrylsäure
DE69903443D1 (de) Kontinuierliches Verfahren zur Herstellung von optisch reinem (S)-3-Hydroxy-gamma-Butyrolacton
DE59905262D1 (de) Verfahren zur Herstellung von Alkoholen
DE69811870D1 (de) Verfahren zur Herstellung von Methanol
DE59810937D1 (de) Verfahren zur Herstellung von zylindrischen Beschichtungsträgern
DE59907246D1 (de) Verfahren zur Herstellung von Citral
DE69928463D1 (de) Verfahren zur Herstellung von Stahlkomponenten
DE69906620D1 (de) Verfahren zur Herstellung von Alkoholen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition