DE69841658D1 - Halbleiterdioden mit niedrigem spannungsabfall in durchlassrichtung und mit niedrigem rückwartsleckstrom - Google Patents

Halbleiterdioden mit niedrigem spannungsabfall in durchlassrichtung und mit niedrigem rückwartsleckstrom

Info

Publication number
DE69841658D1
DE69841658D1 DE69841658T DE69841658T DE69841658D1 DE 69841658 D1 DE69841658 D1 DE 69841658D1 DE 69841658 T DE69841658 T DE 69841658T DE 69841658 T DE69841658 T DE 69841658T DE 69841658 D1 DE69841658 D1 DE 69841658D1
Authority
DE
Germany
Prior art keywords
semiconductor diodes
low
devices
voltage drop
transmission direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69841658T
Other languages
English (en)
Inventor
Richard A Metzler
Vladimir Rodov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Integrated Discrete Devices LLC
Original Assignee
Integrated Discrete Devices LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25142076&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69841658(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Integrated Discrete Devices LLC filed Critical Integrated Discrete Devices LLC
Application granted granted Critical
Publication of DE69841658D1 publication Critical patent/DE69841658D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66136—PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electronic Switches (AREA)
DE69841658T 1997-01-23 1998-01-19 Halbleiterdioden mit niedrigem spannungsabfall in durchlassrichtung und mit niedrigem rückwartsleckstrom Expired - Lifetime DE69841658D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/787,627 US5825079A (en) 1997-01-23 1997-01-23 Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage
PCT/US1998/000843 WO1998033218A1 (en) 1997-01-23 1998-01-19 Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage

Publications (1)

Publication Number Publication Date
DE69841658D1 true DE69841658D1 (de) 2010-06-24

Family

ID=25142076

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69841658T Expired - Lifetime DE69841658D1 (de) 1997-01-23 1998-01-19 Halbleiterdioden mit niedrigem spannungsabfall in durchlassrichtung und mit niedrigem rückwartsleckstrom

Country Status (12)

Country Link
US (1) US5825079A (de)
EP (1) EP0956597B1 (de)
JP (1) JP4058541B2 (de)
KR (1) KR100453264B1 (de)
CN (1) CN1135633C (de)
AT (1) ATE467906T1 (de)
AU (1) AU6027698A (de)
CA (1) CA2278308C (de)
DE (1) DE69841658D1 (de)
IL (1) IL130973A (de)
TW (1) TW368757B (de)
WO (1) WO1998033218A1 (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331455B1 (en) 1999-04-01 2001-12-18 Advanced Power Devices, Inc. Power rectifier device and method of fabricating power rectifier devices
US6420225B1 (en) 1999-04-01 2002-07-16 Apd Semiconductor, Inc. Method of fabricating power rectifier device
US6624030B2 (en) 2000-12-19 2003-09-23 Advanced Power Devices, Inc. Method of fabricating power rectifier device having a laterally graded P-N junction for a channel region
US6448160B1 (en) 1999-04-01 2002-09-10 Apd Semiconductor, Inc. Method of fabricating power rectifier device to vary operating parameters and resulting device
US6186408B1 (en) 1999-05-28 2001-02-13 Advanced Power Devices, Inc. High cell density power rectifier
US6420757B1 (en) 1999-09-14 2002-07-16 Vram Technologies, Llc Semiconductor diodes having low forward conduction voltage drop, low reverse current leakage, and high avalanche energy capability
US6433370B1 (en) 2000-02-10 2002-08-13 Vram Technologies, Llc Method and apparatus for cylindrical semiconductor diodes
US6667237B1 (en) 2000-10-12 2003-12-23 Vram Technologies, Llc Method and apparatus for patterning fine dimensions
US6580150B1 (en) 2000-11-13 2003-06-17 Vram Technologies, Llc Vertical junction field effect semiconductor diodes
US6537860B2 (en) 2000-12-18 2003-03-25 Apd Semiconductor, Inc. Method of fabricating power VLSI diode devices
US6537921B2 (en) * 2001-05-23 2003-03-25 Vram Technologies, Llc Vertical metal oxide silicon field effect semiconductor diodes
US6515330B1 (en) 2002-01-02 2003-02-04 Apd Semiconductor, Inc. Power device having vertical current path with enhanced pinch-off for current limiting
TW548850B (en) * 2002-05-29 2003-08-21 Toppoly Optoelectronics Corp Low-temperature polysilicon TFT of LDD structure and process for producing same
US7030680B2 (en) * 2003-02-26 2006-04-18 Integrated Discrete Devices, Llc On chip power supply
US6958275B2 (en) * 2003-03-11 2005-10-25 Integrated Discrete Devices, Llc MOSFET power transistors and methods
US8044432B2 (en) * 2005-11-29 2011-10-25 The Hong Kong University Of Science And Technology Low density drain HEMTs
US7972915B2 (en) * 2005-11-29 2011-07-05 The Hong Kong University Of Science And Technology Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HFETs
US7932539B2 (en) * 2005-11-29 2011-04-26 The Hong Kong University Of Science And Technology Enhancement-mode III-N devices, circuits, and methods
US8435873B2 (en) * 2006-06-08 2013-05-07 Texas Instruments Incorporated Unguarded Schottky barrier diodes with dielectric underetch at silicide interface
TWI460857B (zh) * 2007-08-03 2014-11-11 Univ Hong Kong Science & Techn 可靠之常關型iii族－氮化物主動裝置結構，以及相關方法與系統
EP2232559B1 (de) 2007-09-26 2019-05-15 STMicroelectronics N.V. Einstellbarer feldeffektgleichrichter
US8633521B2 (en) 2007-09-26 2014-01-21 Stmicroelectronics N.V. Self-bootstrapping field effect diode structures and methods
US8643055B2 (en) 2007-09-26 2014-02-04 Stmicroelectronics N.V. Series current limiter device
US8148748B2 (en) 2007-09-26 2012-04-03 Stmicroelectronics N.V. Adjustable field effect rectifier
US8076699B2 (en) * 2008-04-02 2011-12-13 The Hong Kong Univ. Of Science And Technology Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems
JP4752873B2 (ja) * 2008-06-20 2011-08-17 ブラザー工業株式会社 シート材搬送装置、それを備えた画像読取装置さらに画像読取装置を備えた画像記録装置
US20100084687A1 (en) * 2008-10-03 2010-04-08 The Hong Kong University Of Science And Technology Aluminum gallium nitride/gallium nitride high electron mobility transistors
CN102332473A (zh) * 2011-09-20 2012-01-25 彭艳兵 一种低压降有源二极管
US9337310B2 (en) 2014-05-05 2016-05-10 Globalfoundries Inc. Low leakage, high frequency devices
US9539435B2 (en) 2014-09-08 2017-01-10 Medtronic, Inc. Transthoracic protection circuit for implantable medical devices
US9861827B2 (en) 2014-09-08 2018-01-09 Medtronic, Inc. Implantable medical devices having multi-cell power sources
US9604071B2 (en) 2014-09-08 2017-03-28 Medtronic, Inc. Implantable medical devices having multi-cell power sources
US9643025B2 (en) 2014-09-08 2017-05-09 Medtronic, Inc. Multi-primary transformer charging circuits for implantable medical devices
US9579517B2 (en) 2014-09-08 2017-02-28 Medtronic, Inc. Transformer-based charging circuits for implantable medical devices
US9861828B2 (en) 2014-09-08 2018-01-09 Medtronic, Inc. Monitoring multi-cell power source of an implantable medical device
US9724528B2 (en) 2014-09-08 2017-08-08 Medtronic, Inc. Multiple transformer charging circuits for implantable medical devices
US10050115B2 (en) 2014-12-30 2018-08-14 Globalfoundries Inc. Tapered gate oxide in LDMOS devices
US10596648B2 (en) 2017-05-08 2020-03-24 Snap-On Incorporated Internal thread chase

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3617824A (en) * 1965-07-12 1971-11-02 Nippon Electric Co Mos device with a metal-silicide gate
US3407343A (en) * 1966-03-28 1968-10-22 Ibm Insulated-gate field effect transistor exhibiting a maximum source-drain conductance at a critical gate bias voltage
US3458798A (en) * 1966-09-15 1969-07-29 Ibm Solid state rectifying circuit arrangements
US3749987A (en) * 1971-08-09 1973-07-31 Ibm Semiconductor device embodying field effect transistors and schottky barrier diodes
US3935586A (en) * 1972-06-29 1976-01-27 U.S. Philips Corporation Semiconductor device having a Schottky junction and method of manufacturing same
FR2289051A1 (fr) * 1974-10-22 1976-05-21 Ibm Dispositifs a semi-conducteur du genre transistors a effet de champ et a porte isolee et circuits de protection cotre les surtensions
US4099260A (en) * 1976-09-20 1978-07-04 Bell Telephone Laboratories, Incorporated Bipolar read-only-memory unit having self-isolating bit-lines
US4139880A (en) * 1977-10-03 1979-02-13 Motorola, Inc. CMOS polarity reversal circuit
US4246502A (en) * 1978-08-16 1981-01-20 Mitel Corporation Means for coupling incompatible signals to an integrated circuit and for deriving operating supply therefrom
US4533988A (en) * 1981-04-09 1985-08-06 Telectronics Pty. Ltd. On-chip CMOS bridge circuit
US4423456A (en) * 1981-11-13 1983-12-27 Medtronic, Inc. Battery reversal protection
DE3219606A1 (de) * 1982-05-25 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Schottky-leistungsdiode
US4777580A (en) * 1985-01-30 1988-10-11 Maxim Integrated Products Integrated full-wave rectifier circuit
US4745395A (en) * 1986-01-27 1988-05-17 General Datacomm, Inc. Precision current rectifier for rectifying input current
US4875151A (en) * 1986-08-11 1989-10-17 Ncr Corporation Two transistor full wave rectifier
JPH0693498B2 (ja) * 1986-08-25 1994-11-16 日立超エル・エス・アイエンジニアリング株式会社 半導体集積回路装置
US4811065A (en) * 1987-06-11 1989-03-07 Siliconix Incorporated Power DMOS transistor with high speed body diode
US4857985A (en) * 1987-08-31 1989-08-15 National Semiconductor Corporation MOS IC reverse battery protection
US4903189A (en) * 1988-04-27 1990-02-20 General Electric Company Low noise, high frequency synchronous rectifier
US5038266A (en) * 1990-01-02 1991-08-06 General Electric Company High efficiency, regulated DC supply
JP2730271B2 (ja) * 1990-03-07 1998-03-25 住友電気工業株式会社 半導体装置
JPH0429372A (ja) * 1990-05-24 1992-01-31 Mitsubishi Electric Corp 半導体光検出装置
JP2682202B2 (ja) * 1990-06-08 1997-11-26 日本電気株式会社 電界効果トランジスタを用いた整流回路
US5184198A (en) * 1990-08-15 1993-02-02 Solid State Devices, Inc. Special geometry Schottky diode
US5109256A (en) * 1990-08-17 1992-04-28 National Semiconductor Corporation Schottky barrier diodes and Schottky barrier diode-clamped transistors and method of fabrication
JP3074736B2 (ja) * 1990-12-28 2000-08-07 富士電機株式会社 半導体装置
US5268833A (en) * 1991-05-14 1993-12-07 U.S. Philips Corporation Rectifier circuit including FETs of the same conductivity type
US5254869A (en) * 1991-06-28 1993-10-19 Linear Technology Corporation Aluminum alloy/silicon chromium sandwich schottky diode
US5475245A (en) * 1992-03-23 1995-12-12 Rohm Co., Ltd. Field-effect voltage regulator diode
US5510641A (en) * 1992-06-01 1996-04-23 University Of Washington Majority carrier power diode
US5258640A (en) * 1992-09-02 1993-11-02 International Business Machines Corporation Gate controlled Schottky barrier diode
JP2809253B2 (ja) * 1992-10-02 1998-10-08 富士電機株式会社 注入制御型ショットキーバリア整流素子
US5365102A (en) * 1993-07-06 1994-11-15 North Carolina State University Schottky barrier rectifier with MOS trench
KR970004098Y1 (ko) * 1994-03-30 1997-04-29 삼성전자 주식회사 브러시레스 모터의 역회전 방지회로
US5536676A (en) * 1995-04-03 1996-07-16 National Science Council Low temperature formation of silicided shallow junctions by ion implantation into thin silicon films
KR0154702B1 (ko) * 1995-06-09 1998-10-15 김광호 항복전압을 향상시킨 다이오드 제조 방법

Also Published As

Publication number Publication date
WO1998033218A1 (en) 1998-07-30
ATE467906T1 (de) 2010-05-15
EP0956597A1 (de) 1999-11-17
EP0956597B1 (de) 2010-05-12
CA2278308A1 (en) 1998-07-30
KR100453264B1 (ko) 2004-10-15
IL130973A (en) 2003-03-12
US5825079A (en) 1998-10-20
IL130973A0 (en) 2001-01-28
EP0956597A4 (de) 2000-08-16
CN1255239A (zh) 2000-05-31
KR20000070391A (ko) 2000-11-25
TW368757B (en) 1999-09-01
CN1135633C (zh) 2004-01-21
AU6027698A (en) 1998-08-18
CA2278308C (en) 2007-12-11
JP2001523393A (ja) 2001-11-20
JP4058541B2 (ja) 2008-03-12

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