DE69835052D1 - Kontakt auf P-Typ Gebiet - Google Patents

Kontakt auf P-Typ Gebiet

Info

Publication number
DE69835052D1
DE69835052D1 DE69835052T DE69835052T DE69835052D1 DE 69835052 D1 DE69835052 D1 DE 69835052D1 DE 69835052 T DE69835052 T DE 69835052T DE 69835052 T DE69835052 T DE 69835052T DE 69835052 D1 DE69835052 D1 DE 69835052D1
Authority
DE
Germany
Prior art keywords
contact
type area
area
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69835052T
Other languages
English (en)
Other versions
DE69835052T2 (de
Inventor
Cyril Furio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Application granted granted Critical
Publication of DE69835052D1 publication Critical patent/DE69835052D1/de
Publication of DE69835052T2 publication Critical patent/DE69835052T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
DE69835052T 1997-05-30 1998-05-25 Kontakt auf P-Typ Gebiet Expired - Fee Related DE69835052T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9706904A FR2764117B1 (fr) 1997-05-30 1997-05-30 Contact sur une region de type p
FR9706904 1997-05-30

Publications (2)

Publication Number Publication Date
DE69835052D1 true DE69835052D1 (de) 2006-08-10
DE69835052T2 DE69835052T2 (de) 2007-02-08

Family

ID=9507596

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69835052T Expired - Fee Related DE69835052T2 (de) 1997-05-30 1998-05-25 Kontakt auf P-Typ Gebiet

Country Status (5)

Country Link
US (1) US6633071B1 (de)
EP (1) EP0881687B1 (de)
JP (1) JPH10335633A (de)
DE (1) DE69835052T2 (de)
FR (1) FR2764117B1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7132696B2 (en) 2002-08-28 2006-11-07 Micron Technology, Inc. Intermeshed guard bands for multiple voltage supply structures on an integrated circuit, and methods of making same
US7528459B2 (en) * 2003-05-27 2009-05-05 Nxp B.V. Punch-through diode and method of processing the same
TWI346393B (en) * 2007-07-05 2011-08-01 Univ Nat Taiwan A method for forming a p-n junction photodiode and an apparatus for the same
US8338906B2 (en) * 2008-01-30 2012-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Schottky device
US7943472B2 (en) * 2008-01-31 2011-05-17 Texas Instruments Incorporated CoSi2 Schottky diode integration in BiSMOS process
US8816468B2 (en) * 2010-10-21 2014-08-26 Vishay General Semiconductor Llc Schottky rectifier
JP2012089807A (ja) * 2010-10-22 2012-05-10 Shindengen Electric Mfg Co Ltd 半導体装置
US9716151B2 (en) * 2013-09-24 2017-07-25 Semiconductor Components Industries, Llc Schottky device having conductive trenches and a multi-concentration doping profile therebetween
JP2019117855A (ja) * 2017-12-27 2019-07-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10608122B2 (en) 2018-03-13 2020-03-31 Semicondutor Components Industries, Llc Schottky device and method of manufacture
CN113437157B (zh) * 2021-06-22 2022-07-26 扬州国宇电子有限公司 一种台面射频pin二极管及其制备方法
CN115101599A (zh) * 2022-05-18 2022-09-23 北京大学 肖特基晶体管、二极管、冷源半导体结构及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4063964A (en) * 1976-12-27 1977-12-20 International Business Machines Corporation Method for forming a self-aligned schottky barrier device guardring
US4394673A (en) * 1980-09-29 1983-07-19 International Business Machines Corporation Rare earth silicide Schottky barriers
DE3234096A1 (de) * 1982-09-14 1984-03-15 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Bauelemente und arrays aus silizium zur detektion von infrarotem licht
US4946803A (en) * 1982-12-08 1990-08-07 North American Philips Corp., Signetics Division Method for manufacturing a Schottky-type rectifier having controllable barrier height
US4816879A (en) * 1982-12-08 1989-03-28 North American Philips Corporation, Signetics Division Schottky-type rectifier having controllable barrier height
JPS60214563A (ja) 1984-04-09 1985-10-26 Mitsubishi Electric Corp バイポ−ラトランジスタの製造方法
US5021840A (en) * 1987-08-18 1991-06-04 Texas Instruments Incorporated Schottky or PN diode with composite sidewall
JPH03286569A (ja) * 1990-04-03 1991-12-17 Nec Corp Ｍｅｓ型電界効果トランジスタ
JP3130545B2 (ja) * 1991-03-06 2001-01-31 株式会社東芝 半導体装置および半導体装置の製造方法
US5130760A (en) * 1991-06-11 1992-07-14 Honeywell Inc. Bidirectional surge suppressor Zener diode circuit with guard rings
US5285084A (en) * 1992-09-02 1994-02-08 Kobe Steel Usa Diamond schottky diodes and gas sensors fabricated therefrom
US5365102A (en) * 1993-07-06 1994-11-15 North Carolina State University Schottky barrier rectifier with MOS trench
US5814873A (en) * 1994-07-05 1998-09-29 Nec Corporation Schottky barrier infrared sensor
US5612567A (en) * 1996-05-13 1997-03-18 North Carolina State University Schottky barrier rectifiers and methods of forming same

Also Published As

Publication number Publication date
DE69835052T2 (de) 2007-02-08
JPH10335633A (ja) 1998-12-18
EP0881687B1 (de) 2006-06-28
FR2764117B1 (fr) 1999-08-13
US6633071B1 (en) 2003-10-14
FR2764117A1 (fr) 1998-12-04
EP0881687A1 (de) 1998-12-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee