DE69834878D1 - Integrierte Leistungsschaltung, Verfahren zu desser Herstellung, und Umformer mit solch einer Schaltung - Google Patents
Integrierte Leistungsschaltung, Verfahren zu desser Herstellung, und Umformer mit solch einer SchaltungInfo
- Publication number
- DE69834878D1 DE69834878D1 DE69834878T DE69834878T DE69834878D1 DE 69834878 D1 DE69834878 D1 DE 69834878D1 DE 69834878 T DE69834878 T DE 69834878T DE 69834878 T DE69834878 T DE 69834878T DE 69834878 D1 DE69834878 D1 DE 69834878D1
- Authority
- DE
- Germany
- Prior art keywords
- circuit
- converter
- manufacturing
- integrated power
- power circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76248—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using lateral overgrowth techniques, i.e. ELO techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9710625 | 1997-08-25 | ||
FR9710625A FR2767605B1 (fr) | 1997-08-25 | 1997-08-25 | Circuit integre de puissance, procede de fabrication d'un tel circuit et convertisseur incluant un tel circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69834878D1 true DE69834878D1 (de) | 2006-07-27 |
DE69834878T2 DE69834878T2 (de) | 2007-02-01 |
Family
ID=9510477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1998634878 Expired - Lifetime DE69834878T2 (de) | 1997-08-25 | 1998-08-21 | Integrierte Leistungsschaltung, Verfahren zu desser Herstellung, und Umformer mit solch einer Schaltung |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0901158B1 (de) |
JP (1) | JP3188870B2 (de) |
DE (1) | DE69834878T2 (de) |
FR (1) | FR2767605B1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2834828B1 (fr) * | 2002-01-17 | 2005-04-29 | Alstom | Convertisseur matriciel pour la transformation d'energie electrique |
DE102004053016A1 (de) * | 2004-11-03 | 2006-05-04 | Atmel Germany Gmbh | Halbleiteranordnung und Verfahren zur Herstellung einer Halbleiteranordnung |
FR2935838B1 (fr) * | 2008-09-05 | 2012-11-23 | Commissariat Energie Atomique | Procede de preparation d'une couche mince auto-supportee de silicium cristallise |
JP6248458B2 (ja) * | 2013-08-05 | 2017-12-20 | 株式会社Sumco | 貼り合わせウェーハの製造方法および貼り合わせウェーハ |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE465492B (sv) * | 1990-01-24 | 1991-09-16 | Asea Brown Boveri | Halvledarkomponent innehaallande ett diamantskikt som aer anordnat mellan ett substrat och ett aktivt skikt och foerfarande foer dess framstaellning |
US5186785A (en) * | 1991-04-05 | 1993-02-16 | The United States Of America As Represented By The Secretary Of The Air Force | Zone melted recrystallized silicon on diamond |
DE69225911T2 (de) * | 1992-12-18 | 1999-02-11 | Harris Corp | Silizium-auf-diamant-schaltungsstruktur und herstellungsverfahren dafür |
IT1268123B1 (it) * | 1994-10-13 | 1997-02-20 | Sgs Thomson Microelectronics | Fetta di materiale semiconduttore per la fabbricazione di dispositivi integrati e procedimento per la sua fabbricazione. |
-
1997
- 1997-08-25 FR FR9710625A patent/FR2767605B1/fr not_active Expired - Lifetime
-
1998
- 1998-08-21 EP EP19980402090 patent/EP0901158B1/de not_active Expired - Lifetime
- 1998-08-21 DE DE1998634878 patent/DE69834878T2/de not_active Expired - Lifetime
- 1998-08-24 JP JP23700398A patent/JP3188870B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2767605B1 (fr) | 2001-05-11 |
JPH11150269A (ja) | 1999-06-02 |
FR2767605A1 (fr) | 1999-02-26 |
JP3188870B2 (ja) | 2001-07-16 |
DE69834878T2 (de) | 2007-02-01 |
EP0901158A1 (de) | 1999-03-10 |
EP0901158B1 (de) | 2006-06-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |