DE69824282D1 - Planarisierungszusammensetzung zur entfernung von metallschichten - Google Patents

Planarisierungszusammensetzung zur entfernung von metallschichten

Info

Publication number
DE69824282D1
DE69824282D1 DE69824282T DE69824282T DE69824282D1 DE 69824282 D1 DE69824282 D1 DE 69824282D1 DE 69824282 T DE69824282 T DE 69824282T DE 69824282 T DE69824282 T DE 69824282T DE 69824282 D1 DE69824282 D1 DE 69824282D1
Authority
DE
Germany
Prior art keywords
weight percent
particle diameter
removal
metal layers
planarization composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69824282T
Other languages
English (en)
Other versions
DE69824282T2 (de
Inventor
E Currie
Michael Jones
J Grebinski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
Original Assignee
Advanced Technology Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc
Application granted granted Critical
Publication of DE69824282D1 publication Critical patent/DE69824282D1/de
Publication of DE69824282T2 publication Critical patent/DE69824282T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/775—Nanosized powder or flake, e.g. nanosized catalyst
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/888—Shaping or removal of materials, e.g. etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Detergent Compositions (AREA)
DE69824282T 1997-04-02 1998-03-31 Planarisierungszusammensetzung zur entfernung von metallschichten Expired - Lifetime DE69824282T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/825,769 US5993685A (en) 1997-04-02 1997-04-02 Planarization composition for removing metal films
US825769 1997-04-02
PCT/US1998/006360 WO1998044061A1 (en) 1997-04-02 1998-03-31 Planarization composition for removing metal films

Publications (2)

Publication Number Publication Date
DE69824282D1 true DE69824282D1 (de) 2004-07-08
DE69824282T2 DE69824282T2 (de) 2005-06-23

Family

ID=25244880

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69824282T Expired - Lifetime DE69824282T2 (de) 1997-04-02 1998-03-31 Planarisierungszusammensetzung zur entfernung von metallschichten

Country Status (9)

Country Link
US (2) US5993685A (de)
EP (1) EP0971993B1 (de)
JP (1) JP4489191B2 (de)
KR (1) KR100505860B1 (de)
AT (1) ATE268368T1 (de)
AU (1) AU6944598A (de)
DE (1) DE69824282T2 (de)
TW (1) TW565605B (de)
WO (1) WO1998044061A1 (de)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6602439B1 (en) * 1997-02-24 2003-08-05 Superior Micropowders, Llc Chemical-mechanical planarization slurries and powders and methods for using same
US5993685A (en) * 1997-04-02 1999-11-30 Advanced Technology Materials Planarization composition for removing metal films
US6294105B1 (en) * 1997-12-23 2001-09-25 International Business Machines Corporation Chemical mechanical polishing slurry and method for polishing metal/oxide layers
US6210257B1 (en) * 1998-05-29 2001-04-03 Micron Technology, Inc. Web-format polishing pads and methods for manufacturing and using web-format polishing pads in mechanical and chemical-mechanical planarization of microelectronic substrates
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
US6383905B2 (en) * 1998-07-31 2002-05-07 Stmicroelectronics, Inc. Formation of micro rough poly surface for low sheet resistance salicided sub-quarter micron poly lines
FR2781922B1 (fr) * 1998-07-31 2001-11-23 Clariant France Sa Procede de polissage mecano-chimique d'une couche en un materiau a base de cuivre
US6863593B1 (en) 1998-11-02 2005-03-08 Applied Materials, Inc. Chemical mechanical polishing a substrate having a filler layer and a stop layer
US6261158B1 (en) * 1998-12-16 2001-07-17 Speedfam-Ipec Multi-step chemical mechanical polishing
JP2002537652A (ja) * 1999-02-18 2002-11-05 ロデール ホールディングス インコーポレイテッド 低誘電率高分子層を化学機械研磨するための方法
US6419554B2 (en) * 1999-06-24 2002-07-16 Micron Technology, Inc. Fixed abrasive chemical-mechanical planarization of titanium nitride
US6855266B1 (en) 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
US6409781B1 (en) 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
US6599173B1 (en) * 2000-06-30 2003-07-29 International Business Machines Corporation Method to prevent leaving residual metal in CMP process of metal interconnect
US6461227B1 (en) 2000-10-17 2002-10-08 Cabot Microelectronics Corporation Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition
US6612911B2 (en) * 2001-01-16 2003-09-02 Cabot Microelectronics Corporation Alkali metal-containing polishing system and method
US20030104770A1 (en) 2001-04-30 2003-06-05 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
US20040159050A1 (en) * 2001-04-30 2004-08-19 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
US7104869B2 (en) 2001-07-13 2006-09-12 Applied Materials, Inc. Barrier removal at low polish pressure
US7008554B2 (en) 2001-07-13 2006-03-07 Applied Materials, Inc. Dual reduced agents for barrier removal in chemical mechanical polishing
US6821881B2 (en) 2001-07-25 2004-11-23 Applied Materials, Inc. Method for chemical mechanical polishing of semiconductor substrates
KR100421928B1 (ko) * 2001-11-21 2004-03-11 제일모직주식회사 반도체 웨이퍼의 금속배선 연마용 슬러리 조성물
FR2835844B1 (fr) * 2002-02-13 2006-12-15 Clariant Procede de polissage mecano-chimique de substrats metalliques
RS50930B (sr) * 2002-06-07 2010-08-31 Avantor Performance Materials Inc. Kompozicije za mikroelektronsko čišćenje koje sadrže oksidatore i organske rastvarače
KR100497608B1 (ko) * 2002-08-05 2005-07-01 삼성전자주식회사 슬러리 조성물 및 이의 제조 방법과 이를 사용한 연마 방법
KR100495975B1 (ko) * 2002-09-25 2005-06-16 주식회사 동진쎄미켐 텅스텐 금속막 연마용 화학-기계적 연마 슬러리 조성물
US7037174B2 (en) 2002-10-03 2006-05-02 Applied Materials, Inc. Methods for reducing delamination during chemical mechanical polishing
EP1567606A1 (de) * 2002-10-22 2005-08-31 Psiloquest, Inc. Korrosionsverzögernde poliersuspension zur chemisch-mechanischen politur von kupferflächen
JP4526777B2 (ja) * 2003-04-04 2010-08-18 ニッタ・ハース株式会社 水性コンディショニング液およびコンディショニング法
US20050189322A1 (en) * 2004-02-27 2005-09-01 Lane Sarah J. Compositions and methods for chemical mechanical polishing silica and silicon nitride
US20050211952A1 (en) * 2004-03-29 2005-09-29 Timothy Mace Compositions and methods for chemical mechanical planarization of tungsten and titanium
US20050214191A1 (en) * 2004-03-29 2005-09-29 Mueller Brian L Abrasives and compositions for chemical mechanical planarization of tungsten and titanium
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
US20090215269A1 (en) * 2005-06-06 2009-08-27 Advanced Technology Materials Inc. Integrated chemical mechanical polishing composition and process for single platen processing
CN101473073B (zh) * 2006-04-26 2012-08-08 高级技术材料公司 半导体加工系统的清洁
US20080142039A1 (en) * 2006-12-13 2008-06-19 Advanced Technology Materials, Inc. Removal of nitride deposits
WO2008080096A2 (en) 2006-12-21 2008-07-03 Advanced Technology Materials, Inc. Compositions and methods for the selective removal of silicon nitride
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
US20080261402A1 (en) * 2007-04-17 2008-10-23 United Microelectronics Corp. Method of removing insulating layer on substrate
TWI619153B (zh) 2008-02-11 2018-03-21 恩特葛瑞斯股份有限公司 在半導體處理系統中離子源之清洗
US10160093B2 (en) 2008-12-12 2018-12-25 Applied Materials, Inc. Carrier head membrane roughness to control polishing rate
JP6101421B2 (ja) 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
TW201716588A (zh) 2010-08-20 2017-05-16 恩特葛瑞斯股份有限公司 從電子廢棄物再生貴金屬和卑金屬之永續製程
SG189292A1 (en) 2010-10-06 2013-05-31 Advanced Tech Materials Composition and process for selectively etching metal nitrides
TWI502065B (zh) 2010-10-13 2015-10-01 Entegris Inc 抑制氮化鈦腐蝕之組成物及方法
WO2012097143A2 (en) 2011-01-13 2012-07-19 Advanced Technology Materials, Inc. Formulations for the removal of particles generated by cerium- containing solutions
JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅または銅合金用エッチング液
US9765288B2 (en) 2012-12-05 2017-09-19 Entegris, Inc. Compositions for cleaning III-V semiconductor materials and methods of using same
JP6363116B2 (ja) 2013-03-04 2018-07-25 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物および方法
EP3004287B1 (de) 2013-06-06 2021-08-18 Entegris, Inc. Zusammensetzungen und verfahren zum selektiven ätzen von titannitrid
US10138117B2 (en) 2013-07-31 2018-11-27 Entegris, Inc. Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility
US10428271B2 (en) 2013-08-30 2019-10-01 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
TWI654340B (zh) 2013-12-16 2019-03-21 美商恩特葛瑞斯股份有限公司 Ｎｉ：ＮｉＧｅ：Ｇｅ選擇性蝕刻配方及其使用方法
SG10201805234YA (en) 2013-12-20 2018-08-30 Entegris Inc Use of non-oxidizing strong acids for the removal of ion-implanted resist
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
EP3099839A4 (de) 2014-01-29 2017-10-11 Entegris, Inc. Formulierungen zur verwendung nach dem chemisch-mechanischen polieren und verfahren zur verwendung
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1752163A1 (de) * 1968-04-11 1971-05-13 Wacker Chemie Gmbh Verfahren zum Polieren von Halbleiteroberflaechen
JPS6374911A (ja) * 1986-09-19 1988-04-05 Shin Etsu Chem Co Ltd 微細球状シリカの製造法
US5230833A (en) * 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
SU1701759A1 (ru) * 1989-11-20 1991-12-30 Черновицкий Государственный Университет Им.Ю.Федьковича Композици дл химико-механической полировки поверхности полупроводниковых кристаллов
US5264010A (en) * 1992-04-27 1993-11-23 Rodel, Inc. Compositions and methods for polishing and planarizing surfaces
JPH0794455A (ja) * 1993-09-24 1995-04-07 Sumitomo Metal Ind Ltd 配線の形成方法
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
WO1996016436A1 (en) * 1994-11-18 1996-05-30 Advanced Micro Devices, Inc. Method of making a chemical-mechanical polishing slurry and the polishing slurry
US5614444A (en) * 1995-06-06 1997-03-25 Sematech, Inc. Method of using additives with silica-based slurries to enhance selectivity in metal CMP
US5654216A (en) * 1996-04-08 1997-08-05 Chartered Semiconductor Manufacturing Pte Ltd. Formation of a metal via structure from a composite metal layer
KR19980019046A (ko) * 1996-08-29 1998-06-05 고사이 아키오 연마용 조성물 및 이의 용도(Abrasive composition and use of the same)
US5993685A (en) * 1997-04-02 1999-11-30 Advanced Technology Materials Planarization composition for removing metal films

Also Published As

Publication number Publication date
KR20010005976A (ko) 2001-01-15
US5993685A (en) 1999-11-30
JP2001518948A (ja) 2001-10-16
EP0971993A1 (de) 2000-01-19
US6267909B1 (en) 2001-07-31
DE69824282T2 (de) 2005-06-23
ATE268368T1 (de) 2004-06-15
EP0971993B1 (de) 2004-06-02
JP4489191B2 (ja) 2010-06-23
AU6944598A (en) 1998-10-22
KR100505860B1 (ko) 2005-08-04
WO1998044061A1 (en) 1998-10-08
TW565605B (en) 2003-12-11

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