ATE268368T1 - Planarisierungszusammensetzung zur entfernung von metallschichten - Google Patents

Planarisierungszusammensetzung zur entfernung von metallschichten

Info

Publication number
ATE268368T1
ATE268368T1 AT98915203T AT98915203T ATE268368T1 AT E268368 T1 ATE268368 T1 AT E268368T1 AT 98915203 T AT98915203 T AT 98915203T AT 98915203 T AT98915203 T AT 98915203T AT E268368 T1 ATE268368 T1 AT E268368T1
Authority
AT
Austria
Prior art keywords
weight percent
particle diameter
composition
planarising
removal
Prior art date
Application number
AT98915203T
Other languages
English (en)
Inventor
James E Currie
Michael Jones
Thomas J Grebinski
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Application granted granted Critical
Publication of ATE268368T1 publication Critical patent/ATE268368T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/775—Nanosized powder or flake, e.g. nanosized catalyst
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/888—Shaping or removal of materials, e.g. etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Detergent Compositions (AREA)
AT98915203T 1997-04-02 1998-03-31 Planarisierungszusammensetzung zur entfernung von metallschichten ATE268368T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/825,769 US5993685A (en) 1997-04-02 1997-04-02 Planarization composition for removing metal films
PCT/US1998/006360 WO1998044061A1 (en) 1997-04-02 1998-03-31 Planarization composition for removing metal films

Publications (1)

Publication Number Publication Date
ATE268368T1 true ATE268368T1 (de) 2004-06-15

Family

ID=25244880

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98915203T ATE268368T1 (de) 1997-04-02 1998-03-31 Planarisierungszusammensetzung zur entfernung von metallschichten

Country Status (9)

Country Link
US (2) US5993685A (de)
EP (1) EP0971993B1 (de)
JP (1) JP4489191B2 (de)
KR (1) KR100505860B1 (de)
AT (1) ATE268368T1 (de)
AU (1) AU6944598A (de)
DE (1) DE69824282T2 (de)
TW (1) TW565605B (de)
WO (1) WO1998044061A1 (de)

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US5993685A (en) * 1997-04-02 1999-11-30 Advanced Technology Materials Planarization composition for removing metal films
US6294105B1 (en) * 1997-12-23 2001-09-25 International Business Machines Corporation Chemical mechanical polishing slurry and method for polishing metal/oxide layers
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US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
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FR2781922B1 (fr) * 1998-07-31 2001-11-23 Clariant France Sa Procede de polissage mecano-chimique d'une couche en un materiau a base de cuivre
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KR20010111261A (ko) * 1999-02-18 2001-12-17 갤반 마틴 유전율이 낮은 중합체 층의 ｃｍｐ법
US6419554B2 (en) * 1999-06-24 2002-07-16 Micron Technology, Inc. Fixed abrasive chemical-mechanical planarization of titanium nitride
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US6409781B1 (en) 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
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US6612911B2 (en) * 2001-01-16 2003-09-02 Cabot Microelectronics Corporation Alkali metal-containing polishing system and method
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FR2835844B1 (fr) * 2002-02-13 2006-12-15 Clariant Procede de polissage mecano-chimique de substrats metalliques
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KR100495975B1 (ko) * 2002-09-25 2005-06-16 주식회사 동진쎄미켐 텅스텐 금속막 연마용 화학-기계적 연마 슬러리 조성물
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JP4526777B2 (ja) * 2003-04-04 2010-08-18 ニッタ・ハース株式会社 水性コンディショニング液およびコンディショニング法
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US20050214191A1 (en) * 2004-03-29 2005-09-29 Mueller Brian L Abrasives and compositions for chemical mechanical planarization of tungsten and titanium
US20050211952A1 (en) * 2004-03-29 2005-09-29 Timothy Mace Compositions and methods for chemical mechanical planarization of tungsten and titanium
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US8603252B2 (en) * 2006-04-26 2013-12-10 Advanced Technology Materials, Inc. Cleaning of semiconductor processing systems
US20080142039A1 (en) * 2006-12-13 2008-06-19 Advanced Technology Materials, Inc. Removal of nitride deposits
CN101605869B (zh) 2006-12-21 2014-03-05 高级技术材料公司 选择性除去四氮化三硅的组合物和方法
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US20080261402A1 (en) * 2007-04-17 2008-10-23 United Microelectronics Corp. Method of removing insulating layer on substrate
TWI494975B (zh) 2008-02-11 2015-08-01 Advanced Tech Materials 在半導體處理系統中離子源之清洗
US10160093B2 (en) 2008-12-12 2018-12-25 Applied Materials, Inc. Carrier head membrane roughness to control polishing rate
JP6101421B2 (ja) 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
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TWI619800B (zh) 2010-10-06 2018-04-01 恩特葛瑞斯股份有限公司 選擇性蝕刻金屬氮化物之組成物及方法
KR101891363B1 (ko) 2010-10-13 2018-08-24 엔테그리스, 아이엔씨. 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법
WO2012097143A2 (en) 2011-01-13 2012-07-19 Advanced Technology Materials, Inc. Formulations for the removal of particles generated by cerium- containing solutions
JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅または銅合金用エッチング液
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CN111394100A (zh) 2013-06-06 2020-07-10 恩特格里斯公司 用于选择性蚀刻氮化钛的组合物和方法
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Also Published As

Publication number Publication date
DE69824282D1 (de) 2004-07-08
US5993685A (en) 1999-11-30
AU6944598A (en) 1998-10-22
US6267909B1 (en) 2001-07-31
JP2001518948A (ja) 2001-10-16
WO1998044061A1 (en) 1998-10-08
DE69824282T2 (de) 2005-06-23
EP0971993A1 (de) 2000-01-19
KR100505860B1 (ko) 2005-08-04
JP4489191B2 (ja) 2010-06-23
KR20010005976A (ko) 2001-01-15
TW565605B (en) 2003-12-11
EP0971993B1 (de) 2004-06-02

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