DE69813655D1 - Hochleistungsoberflächenemittierender Laser mit vertikalem Resonator und Herstellungsverfahren - Google Patents

Hochleistungsoberflächenemittierender Laser mit vertikalem Resonator und Herstellungsverfahren

Info

Publication number
DE69813655D1
DE69813655D1 DE69813655T DE69813655T DE69813655D1 DE 69813655 D1 DE69813655 D1 DE 69813655D1 DE 69813655 T DE69813655 T DE 69813655T DE 69813655 T DE69813655 T DE 69813655T DE 69813655 D1 DE69813655 D1 DE 69813655D1
Authority
DE
Germany
Prior art keywords
manufacturing process
high power
emitting laser
surface emitting
vertical resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69813655T
Other languages
English (en)
Other versions
DE69813655T2 (de
Inventor
Wenbin Jiang
Michael Lebby
Jamal Ramdani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Finisar Corp
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE69813655D1 publication Critical patent/DE69813655D1/de
Application granted granted Critical
Publication of DE69813655T2 publication Critical patent/DE69813655T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69813655T 1997-02-10 1998-02-09 Hochleistungsoberflächenemittierender Laser mit vertikalem Resonator und Herstellungsverfahren Expired - Lifetime DE69813655T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/795,260 US5914973A (en) 1997-02-10 1997-02-10 Vertical cavity surface emitting laser for high power operation and method of fabrication

Publications (2)

Publication Number Publication Date
DE69813655D1 true DE69813655D1 (de) 2003-05-28
DE69813655T2 DE69813655T2 (de) 2003-11-06

Family

ID=25165131

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69813655T Expired - Lifetime DE69813655T2 (de) 1997-02-10 1998-02-09 Hochleistungsoberflächenemittierender Laser mit vertikalem Resonator und Herstellungsverfahren

Country Status (5)

Country Link
US (1) US5914973A (de)
EP (1) EP0860915B1 (de)
JP (1) JPH10256654A (de)
DE (1) DE69813655T2 (de)
TW (1) TW363293B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114094440A (zh) * 2021-10-22 2022-02-25 南京邮电大学 基于薄膜翻转工艺的GaN基面发射激光器及制备方法

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US6160830A (en) 1998-03-04 2000-12-12 Motorola, Inc. Semiconductor laser device and method of manufacture
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
US6621842B1 (en) 1999-10-15 2003-09-16 E20 Communications, Inc. Method and apparatus for long wavelength semiconductor lasers
NL1015714C2 (nl) * 2000-07-14 2002-01-15 Dsm Nv Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur.
US6628685B1 (en) * 2000-08-21 2003-09-30 Chan-Long Shieh Method of fabricating long-wavelength VCSEL and apparatus
US6810064B1 (en) * 2000-08-22 2004-10-26 The Regents Of The University Of California Heat spreading layers for vertical cavity surface emitting lasers
US6905900B1 (en) * 2000-11-28 2005-06-14 Finisar Corporation Versatile method and system for single mode VCSELs
US6657237B2 (en) * 2000-12-18 2003-12-02 Samsung Electro-Mechanics Co., Ltd. GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
JP4676100B2 (ja) * 2001-08-07 2011-04-27 古河電気工業株式会社 Ａｌ含有化合物半導体層のエピタキシャル成長方法
US6782019B2 (en) * 2001-08-16 2004-08-24 Applied Optoelectronics, Inc. VCSEL with heat-spreading layer
DE10147888A1 (de) 2001-09-28 2003-04-24 Osram Opto Semiconductors Gmbh Optisch gepumpter vertikal emittierender Halbleiterlaser
US8257393B2 (en) * 2003-12-04 2012-09-04 Ethicon, Inc. Active suture for the delivery of therapeutic fluids
US20050190810A1 (en) * 2004-02-27 2005-09-01 Stuart Butterworth Contact-bonded optically pumped semiconductor laser structure
KR100627703B1 (ko) * 2004-12-14 2006-09-26 한국전자통신연구원 하이브리드 금속접합 표면방출 레이저 및 그 제작 방법
KR20070027232A (ko) * 2005-09-06 2007-03-09 삼성전자주식회사 후펌핑 수직외부공진형 표면발광 레이저
TWI303473B (en) * 2005-12-12 2008-11-21 High Power Optoelectronics Inc Semiconductor device integrated with heat sink and method of fabricating the same
JP2010285581A (ja) * 2009-06-15 2010-12-24 Toyota Motor Corp 絶縁樹脂組成物
TWM392637U (en) 2010-07-01 2010-11-21 Three In One Ent Co Ltd A portable otoscope
TWM392638U (en) 2010-07-01 2010-11-21 Three In One Ent Co Ltd A portable otoscope with a detachable screen
CN111180995A (zh) * 2019-11-19 2020-05-19 浙江博升光电科技有限公司 基底转移垂直腔面发射激光器及其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5063569A (en) * 1990-12-19 1991-11-05 At&T Bell Laboratories Vertical-cavity surface-emitting laser with non-epitaxial multilayered dielectric reflectors located on both surfaces
US5146465A (en) * 1991-02-01 1992-09-08 Apa Optics, Inc. Aluminum gallium nitride laser
US5384795A (en) * 1992-09-15 1995-01-24 Texas Instruments Incorporated Light emission from rare-earth element-doped CaF2 thin films by electroluminescence
US5422901A (en) * 1993-11-15 1995-06-06 Motorola, Inc. Semiconductor device with high heat conductivity
US5724376A (en) * 1995-11-30 1998-03-03 Hewlett-Packard Company Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114094440A (zh) * 2021-10-22 2022-02-25 南京邮电大学 基于薄膜翻转工艺的GaN基面发射激光器及制备方法
CN114094440B (zh) * 2021-10-22 2024-03-26 南京邮电大学 基于薄膜翻转工艺的GaN基面发射激光器及制备方法

Also Published As

Publication number Publication date
US5914973A (en) 1999-06-22
EP0860915A3 (de) 1999-03-17
TW363293B (en) 1999-07-01
EP0860915A2 (de) 1998-08-26
EP0860915B1 (de) 2003-04-23
JPH10256654A (ja) 1998-09-25
DE69813655T2 (de) 2003-11-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FINISAR CORP.(N.D.GES.D.STAATES DELAWARE), SUNNYVA