DE69809012D1 - Reduktion der Erosion von Maskenschichten - Google Patents
Reduktion der Erosion von MaskenschichtenInfo
- Publication number
- DE69809012D1 DE69809012D1 DE69809012T DE69809012T DE69809012D1 DE 69809012 D1 DE69809012 D1 DE 69809012D1 DE 69809012 T DE69809012 T DE 69809012T DE 69809012 T DE69809012 T DE 69809012T DE 69809012 D1 DE69809012 D1 DE 69809012D1
- Authority
- DE
- Germany
- Prior art keywords
- erosion
- reduction
- mask layers
- mask
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003628 erosive effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0387—Making the trench
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Drying Of Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US940233 | 1997-09-30 | ||
US08/940,233 US5907771A (en) | 1997-09-30 | 1997-09-30 | Reduction of pad erosion |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69809012D1 true DE69809012D1 (de) | 2002-12-05 |
DE69809012T2 DE69809012T2 (de) | 2004-02-26 |
Family
ID=25474462
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69809012T Expired - Lifetime DE69809012T2 (de) | 1997-09-30 | 1998-08-20 | Reduktion der Erosion von Maskenschichten |
Country Status (7)
Country | Link |
---|---|
US (1) | US5907771A (de) |
EP (1) | EP0905749B1 (de) |
JP (1) | JPH11177064A (de) |
KR (1) | KR100504262B1 (de) |
CN (1) | CN1134838C (de) |
DE (1) | DE69809012T2 (de) |
TW (1) | TW426949B (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6190955B1 (en) * | 1998-01-27 | 2001-02-20 | International Business Machines Corporation | Fabrication of trench capacitors using disposable hard mask |
US6440858B1 (en) * | 1998-08-24 | 2002-08-27 | International Business Machines Corporation | Multi-layer hard mask for deep trench silicon etch |
US6734108B1 (en) * | 1999-09-27 | 2004-05-11 | Cypress Semiconductor Corporation | Semiconductor structure and method of making contacts in a semiconductor structure |
US20060261436A1 (en) * | 2005-05-19 | 2006-11-23 | Freescale Semiconductor, Inc. | Electronic device including a trench field isolation region and a process for forming the same |
US7670895B2 (en) | 2006-04-24 | 2010-03-02 | Freescale Semiconductor, Inc | Process of forming an electronic device including a semiconductor layer and another layer adjacent to an opening within the semiconductor layer |
US20070249127A1 (en) * | 2006-04-24 | 2007-10-25 | Freescale Semiconductor, Inc. | Electronic device including a semiconductor layer and a sidewall spacer and a process of forming the same |
US7491622B2 (en) * | 2006-04-24 | 2009-02-17 | Freescale Semiconductor, Inc. | Process of forming an electronic device including a layer formed using an inductively coupled plasma |
US7528078B2 (en) | 2006-05-12 | 2009-05-05 | Freescale Semiconductor, Inc. | Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer |
KR101075490B1 (ko) * | 2009-01-30 | 2011-10-21 | 주식회사 하이닉스반도체 | 매립게이트를 구비한 반도체장치 및 그 제조 방법 |
KR20140145419A (ko) * | 2013-06-13 | 2014-12-23 | 삼성전자주식회사 | 반도체 소자 제조 방법 |
CN105609503A (zh) * | 2016-01-25 | 2016-05-25 | 中国科学院微电子研究所 | 存储单元、存储器件及电子设备 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4939104A (en) * | 1984-10-31 | 1990-07-03 | Texas Instruments, Incorporated | Method for forming a buried lateral contact |
US5118384A (en) * | 1990-04-03 | 1992-06-02 | International Business Machines Corporation | Reactive ion etching buffer mask |
JPH05110017A (ja) * | 1991-10-18 | 1993-04-30 | Hitachi Ltd | 半導体装置とその製造方法 |
JP3439493B2 (ja) * | 1992-12-01 | 2003-08-25 | 沖電気工業株式会社 | 半導体記憶装置の製造方法 |
DE19600423C2 (de) * | 1996-01-08 | 2001-07-05 | Siemens Ag | Elektrisch programmierbare Speicherzellenanordnung und Verfahren zu deren Herstellung |
US5686345A (en) * | 1996-01-30 | 1997-11-11 | International Business Machines Corporation | Trench mask for forming deep trenches in a semiconductor substrate, and method of using same |
US5776808A (en) * | 1996-12-26 | 1998-07-07 | Siemens Aktiengesellschaft | Pad stack with a poly SI etch stop for TEOS mask removal with RIE |
-
1997
- 1997-09-30 US US08/940,233 patent/US5907771A/en not_active Expired - Lifetime
-
1998
- 1998-08-11 TW TW087113184A patent/TW426949B/zh not_active IP Right Cessation
- 1998-08-13 CN CNB981184197A patent/CN1134838C/zh not_active Expired - Fee Related
- 1998-08-20 EP EP98115707A patent/EP0905749B1/de not_active Expired - Lifetime
- 1998-08-20 DE DE69809012T patent/DE69809012T2/de not_active Expired - Lifetime
- 1998-09-29 KR KR10-1998-0040454A patent/KR100504262B1/ko active IP Right Grant
- 1998-09-30 JP JP10278460A patent/JPH11177064A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR19990030229A (ko) | 1999-04-26 |
KR100504262B1 (ko) | 2005-09-26 |
EP0905749A3 (de) | 2000-01-12 |
EP0905749A2 (de) | 1999-03-31 |
TW426949B (en) | 2001-03-21 |
JPH11177064A (ja) | 1999-07-02 |
EP0905749B1 (de) | 2002-10-30 |
DE69809012T2 (de) | 2004-02-26 |
CN1134838C (zh) | 2004-01-14 |
CN1213171A (zh) | 1999-04-07 |
US5907771A (en) | 1999-05-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: INFINEON TECHNOLOGIES AG, 81669 MUENCHEN, DE |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: QIMONDA AG, 81739 MUENCHEN, DE |