DE69800719D1 - LiGa02 Einkristall, Einkristallinessubstrat und Verfahren zu ihrer Herstellung - Google Patents

LiGa02 Einkristall, Einkristallinessubstrat und Verfahren zu ihrer Herstellung

Info

Publication number
DE69800719D1
DE69800719D1 DE69800719T DE69800719T DE69800719D1 DE 69800719 D1 DE69800719 D1 DE 69800719D1 DE 69800719 T DE69800719 T DE 69800719T DE 69800719 T DE69800719 T DE 69800719T DE 69800719 D1 DE69800719 D1 DE 69800719D1
Authority
DE
Germany
Prior art keywords
single crystal
liga02
manufacture
crystal substrate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69800719T
Other languages
English (en)
Other versions
DE69800719T2 (de
Inventor
Takao Ishii
Shintaro Miyazawa
Yasuo Tazou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of DE69800719D1 publication Critical patent/DE69800719D1/de
Publication of DE69800719T2 publication Critical patent/DE69800719T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE69800719T 1997-01-30 1998-01-23 LiGa02 Einkristall, Einkristallinessubstrat und Verfahren zu ihrer Herstellung Expired - Fee Related DE69800719T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3326297 1997-01-30
JP6959797 1997-03-24

Publications (2)

Publication Number Publication Date
DE69800719D1 true DE69800719D1 (de) 2001-05-31
DE69800719T2 DE69800719T2 (de) 2001-10-25

Family

ID=26371936

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69800719T Expired - Fee Related DE69800719T2 (de) 1997-01-30 1998-01-23 LiGa02 Einkristall, Einkristallinessubstrat und Verfahren zu ihrer Herstellung

Country Status (4)

Country Link
US (2) US6045611A (de)
EP (1) EP0856600B1 (de)
JP (1) JP3549719B2 (de)
DE (1) DE69800719T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6440823B1 (en) 1994-01-27 2002-08-27 Advanced Technology Materials, Inc. Low defect density (Ga, Al, In)N and HVPE process for making same
US6252261B1 (en) * 1998-09-30 2001-06-26 Nec Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
US6936900B1 (en) 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US6451711B1 (en) * 2000-05-04 2002-09-17 Osemi, Incorporated Epitaxial wafer apparatus
JP4510342B2 (ja) * 2001-09-10 2010-07-21 シャープ株式会社 酸化物絶縁体材料およびその形成方法並びに半導体素子
US6989556B2 (en) * 2002-06-06 2006-01-24 Osemi, Inc. Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure
US7187045B2 (en) * 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
US7393411B2 (en) 2003-02-24 2008-07-01 Waseda University β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
WO2005048318A2 (en) * 2003-11-17 2005-05-26 Osemi, Inc. Nitride metal oxide semiconductor integrated transistor devices
WO2005061756A1 (en) * 2003-12-09 2005-07-07 Osemi, Inc. High temperature vacuum evaporation apparatus
WO2007123264A1 (ja) * 2006-04-20 2007-11-01 Mizusawa Industrial Chemicals, Ltd. 新規なアルミニウム複合水酸化物塩及びその製造方法
US7810691B2 (en) * 2007-05-16 2010-10-12 The Invention Science Fund I, Llc Gentle touch surgical stapler
US20100225239A1 (en) * 2009-03-04 2010-09-09 Purespectrum, Inc. Methods and apparatus for a high power factor, high efficiency, dimmable, rapid starting cold cathode lighting ballast
CN101956233B (zh) * 2009-07-20 2012-10-03 上海半导体照明工程技术研究中心 一种镓酸锂晶体的制备方法
KR101231615B1 (ko) 2009-09-11 2013-02-08 한국화학연구원 탄소수 4 내지 6의 유기산으로부터 고리화된 화합물을 제조하는 방법
CN108570709A (zh) * 2017-03-13 2018-09-25 中国科学院福建物质结构研究所 一种多孔氮化镓单晶材料、其制备方法及应用
CN113135736B (zh) * 2021-03-24 2022-02-01 广东工业大学 一种氧化物固态电解质及其制备方法和应用

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3283164A (en) * 1963-12-19 1966-11-01 Bell Telephone Labor Inc Devices utilizing lithium meta-gallate
FR2617870B1 (fr) * 1987-07-09 1989-10-27 Labo Electronique Physique Procede de realisation de plaquettes-substrats orientees, a partir de lingots massifs semi-conducteurs du groupe iii-v
EP0711853B1 (de) * 1994-04-08 1999-09-08 Japan Energy Corporation Verfahren zum züchten von galliumnitridhalbleiterkristallen und vorrichtung
US5625202A (en) * 1995-06-08 1997-04-29 University Of Central Florida Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth

Also Published As

Publication number Publication date
DE69800719T2 (de) 2001-10-25
JP3549719B2 (ja) 2004-08-04
EP0856600B1 (de) 2001-04-25
JPH10324597A (ja) 1998-12-08
EP0856600A1 (de) 1998-08-05
US6077342A (en) 2000-06-20
US6045611A (en) 2000-04-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee