DE69800148D1 - Gegenstand der einen mit einem elektrischen Feld abstimmbaren Halbleiterlaser enthält - Google Patents

Gegenstand der einen mit einem elektrischen Feld abstimmbaren Halbleiterlaser enthält

Info

Publication number
DE69800148D1
DE69800148D1 DE69800148T DE69800148T DE69800148D1 DE 69800148 D1 DE69800148 D1 DE 69800148D1 DE 69800148 T DE69800148 T DE 69800148T DE 69800148 T DE69800148 T DE 69800148T DE 69800148 D1 DE69800148 D1 DE 69800148D1
Authority
DE
Germany
Prior art keywords
tunable
subject
electric field
semiconductor laser
field semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69800148T
Other languages
English (en)
Other versions
DE69800148T2 (de
Inventor
Federico Capasso
Cho Alfred Yi
Jerome Faist
Albert Lee Hutchinson
Carlo Sirtori
Deborah Lee Sivco
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of DE69800148D1 publication Critical patent/DE69800148D1/de
Application granted granted Critical
Publication of DE69800148T2 publication Critical patent/DE69800148T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0614—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/0622—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69800148T 1997-03-27 1998-03-17 Gegenstand der einen mit einem elektrischen Feld abstimmbaren Halbleiterlaser enthält Expired - Lifetime DE69800148T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/825,286 US5978397A (en) 1997-03-27 1997-03-27 Article comprising an electric field-tunable semiconductor laser

Publications (2)

Publication Number Publication Date
DE69800148D1 true DE69800148D1 (de) 2000-06-21
DE69800148T2 DE69800148T2 (de) 2001-01-11

Family

ID=25243610

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69800148T Expired - Lifetime DE69800148T2 (de) 1997-03-27 1998-03-17 Gegenstand der einen mit einem elektrischen Feld abstimmbaren Halbleiterlaser enthält

Country Status (4)

Country Link
US (1) US5978397A (de)
EP (1) EP0867990B1 (de)
JP (1) JP3321076B2 (de)
DE (1) DE69800148T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6148012A (en) * 1998-10-21 2000-11-14 Lucent Technologies Inc. Multiple wavelength quantum cascade light source
US6324199B1 (en) * 1998-11-18 2001-11-27 Lucent Technologies Inc. Intersubband light source with separate electron injector and reflector/extractor
US6782020B2 (en) * 2000-09-08 2004-08-24 The Texas A&M University System Infrared generation in semiconductor lasers
DE10061234C2 (de) * 2000-12-08 2003-01-16 Paul Drude Inst Fuer Festkoerp Unipolarer Halbleiterlaser ohne Injektionsschichten
WO2002056238A2 (en) * 2000-12-15 2002-07-18 Board Of Trustees Of The Leland Stanford Junior University Quantum-dot triggered photon and triggered photon pair
US6690699B2 (en) * 2001-03-02 2004-02-10 Lucent Technologies Inc Quantum cascade laser with relaxation-stabilized injection
US6792011B2 (en) 2001-04-19 2004-09-14 Hrl Laboratories, Llc Frequency modulated laser with high modulation bandwidth
EP1283571B1 (de) * 2001-08-06 2015-01-14 nanoplus GmbH Nanosystems and Technologies Laser mit schwach gekoppeltem Gitterbereich
EP1343232B1 (de) * 2002-03-08 2007-05-02 nanoplus GmbH Nanosystems and Technologies Ein Halbleiterlaserarray mit seitlicher Gratingstruktur
US6829269B2 (en) 2002-05-21 2004-12-07 University Of Massachusetts Systems and methods using phonon mediated intersubband laser
US6865198B2 (en) 2002-09-27 2005-03-08 Battelle Memorial Institute Cavity ringdown spectroscopy system and method
US7199398B2 (en) * 2002-11-20 2007-04-03 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device having electrode electrically separated into at least two regions
US20040109692A1 (en) * 2002-12-09 2004-06-10 James Plante FSO communication systems having high performance detectors
US7010010B2 (en) 2003-06-19 2006-03-07 Lucent Technologies, Inc. Broadband cascade light emitters
US7558305B2 (en) * 2003-12-31 2009-07-07 Wisconsin Alumni Research Foundation Intersubband mid-infrared electroluminescent semiconductor devices
US7301977B2 (en) * 2004-06-10 2007-11-27 Nanoplus Gmbh Tuneable unipolar lasers
US7876795B2 (en) * 2004-08-19 2011-01-25 Maxion Technologies, Inc. Semiconductor light source with electrically tunable emission wavelength
US8571082B2 (en) 2004-08-19 2013-10-29 Maxion Technologies, Inc. Quantum cascade lasers with electrically tunable emission wavelengths
JP2007019339A (ja) * 2005-07-08 2007-01-25 Hamamatsu Photonics Kk 量子カスケードレーザ
JP4873746B2 (ja) * 2006-12-21 2012-02-08 キヤノン株式会社 発振素子
US20130267855A1 (en) * 2011-10-28 2013-10-10 Kazuo Tsubota Comprehensive measuring method of biological materials and treatment method using broadly tunable laser
US9548590B2 (en) 2011-11-29 2017-01-17 Thorlabs Quantum Electronics, Inc. Quantum cascade laser design with stepped well active region

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1299719C (en) * 1989-01-13 1992-04-28 Hui Chun Liu Semiconductor superlattice infrared source
US5289486A (en) * 1991-02-28 1994-02-22 Omron Corporation Semiconductor luminous element and superlattice structure
JPH0629621A (ja) * 1992-07-09 1994-02-04 Mitsubishi Electric Corp 半導体レーザ装置
JPH07147449A (ja) * 1993-11-25 1995-06-06 Mitsubishi Electric Corp 多重量子障壁構造，及び可視光半導体レーザダイオード
US5457709A (en) * 1994-04-04 1995-10-10 At&T Ipm Corp. Unipolar semiconductor laser
US5509025A (en) * 1994-04-04 1996-04-16 At&T Corp. Unipolar semiconductor laser
US5502787A (en) * 1995-05-22 1996-03-26 At&T Corp. Article comprising a semiconductor waveguide structure

Also Published As

Publication number Publication date
US5978397A (en) 1999-11-02
JPH10275956A (ja) 1998-10-13
EP0867990B1 (de) 2000-05-17
EP0867990A1 (de) 1998-09-30
JP3321076B2 (ja) 2002-09-03
DE69800148T2 (de) 2001-01-11

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Legal Events

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