DE69738565D1 - Herstellung einer elektronischen anordnung durch k - Google Patents

Herstellung einer elektronischen anordnung durch k

Info

Publication number
DE69738565D1
DE69738565D1 DE69738565T DE69738565T DE69738565D1 DE 69738565 D1 DE69738565 D1 DE 69738565D1 DE 69738565 T DE69738565 T DE 69738565T DE 69738565 T DE69738565 T DE 69738565T DE 69738565 D1 DE69738565 D1 DE 69738565D1
Authority
DE
Germany
Prior art keywords
manufacture
electronic arrangement
electronic
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69738565T
Other languages
English (en)
Other versions
DE69738565T2 (de
Inventor
David James Mcculloch
Stanley David Brotherton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TPO Hong Kong Holding Ltd
Original Assignee
TPO Hong Kong Holding Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TPO Hong Kong Holding Ltd filed Critical TPO Hong Kong Holding Ltd
Publication of DE69738565D1 publication Critical patent/DE69738565D1/de
Application granted granted Critical
Publication of DE69738565T2 publication Critical patent/DE69738565T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
DE69738565T 1996-11-28 1997-09-29 Herstellung einer elektronischen anordnung durch kristallisation mittels eines energiestrahls Expired - Lifetime DE69738565T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9624715.0A GB9624715D0 (en) 1996-11-28 1996-11-28 Electronic device manufacture
GB9624715 1996-11-28
PCT/IB1997/001186 WO1998024118A1 (en) 1996-11-28 1997-09-29 Electronic device manufacture by energy beam crystallisation

Publications (2)

Publication Number Publication Date
DE69738565D1 true DE69738565D1 (de) 2008-04-24
DE69738565T2 DE69738565T2 (de) 2009-04-02

Family

ID=10803593

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69738565T Expired - Lifetime DE69738565T2 (de) 1996-11-28 1997-09-29 Herstellung einer elektronischen anordnung durch kristallisation mittels eines energiestrahls

Country Status (7)

Country Link
US (1) US6080236A (de)
EP (1) EP0879477B1 (de)
JP (1) JP2000504498A (de)
KR (1) KR100447383B1 (de)
DE (1) DE69738565T2 (de)
GB (1) GB9624715D0 (de)
WO (1) WO1998024118A1 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555449B1 (en) * 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
JP4112655B2 (ja) * 1997-09-25 2008-07-02 東芝松下ディスプレイテクノロジー株式会社 多結晶薄膜の製造方法
US6573531B1 (en) * 1999-09-03 2003-06-03 The Trustees Of Columbia University In The City Of New York Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures
WO2001068954A2 (en) * 2000-03-13 2001-09-20 Ii-Vi Incorporated Axial gradient transport apparatus and process
GB0009280D0 (en) * 2000-04-15 2000-05-31 Koninkl Philips Electronics Nv Method of cystallising a semiconductor film
JP4715016B2 (ja) * 2001-02-15 2011-07-06 ソニー株式会社 ポリシリコン膜の評価方法
JP5091378B2 (ja) * 2001-08-17 2012-12-05 株式会社ジャパンディスプレイセントラル レーザアニール方法及びレーザアニール条件決定装置
US7128783B2 (en) * 2002-04-23 2006-10-31 Sharp Laboratories Of America, Inc. Thin-film crystal-structure-processed mechanical devices, and methods and systems for making
US7135070B2 (en) * 2002-04-23 2006-11-14 Sharp Laboratories Of America, Inc. Monolithic stacked/layered crystal-structure-processed mechanical, and combined mechanical and electrical, devices and methods and systems for making
US20030196591A1 (en) * 2002-04-23 2003-10-23 Hartzell John W. Formation of crystal-structure-processed mechanical, and combined mechanical and electrical, devices on low-temperature substrates
US7125451B2 (en) * 2002-04-23 2006-10-24 Sharp Laboratories Of America, Inc. Crystal-structure-processed mechanical devices and methods and systems for making
JP2006512749A (ja) 2002-08-19 2006-04-13 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 種々の照射パターンを有するシングルショット半導体処理システム及び方法
TW587295B (en) * 2002-12-24 2004-05-11 Au Optronics Corp Method of laser crystallization
TWI359441B (en) 2003-09-16 2012-03-01 Univ Columbia Processes and systems for laser crystallization pr
JP2005191173A (ja) * 2003-12-25 2005-07-14 Hitachi Ltd 表示装置及びその製造方法
JP4568000B2 (ja) * 2004-03-24 2010-10-27 株式会社 日立ディスプレイズ 半導体薄膜の製造方法
US7910499B2 (en) * 2004-11-12 2011-03-22 Applied Materials, Inc. Autofocus for high power laser diode based annealing system
US7422988B2 (en) * 2004-11-12 2008-09-09 Applied Materials, Inc. Rapid detection of imminent failure in laser thermal processing of a substrate
US7438468B2 (en) * 2004-11-12 2008-10-21 Applied Materials, Inc. Multiple band pass filtering for pyrometry in laser based annealing systems
EP1865544A4 (de) * 2005-03-31 2010-12-22 Panasonic Corp Plasma-dotierungsverfahren und -vorrichtung
US7674999B2 (en) * 2006-08-23 2010-03-09 Applied Materials, Inc. Fast axis beam profile shaping by collimation lenslets for high power laser diode based annealing system
US7659187B2 (en) * 2006-11-03 2010-02-09 Applied Materials, Inc. Method of forming PN junctions including a post-ion implant dynamic surface anneal process with minimum interface trap density at the gate insulator-silicon interface
US8614471B2 (en) 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
CN103354204A (zh) 2007-11-21 2013-10-16 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
CN103959442B (zh) * 2011-12-07 2017-09-15 应用材料公司 用于基板处理的激光反射仪
KR102329267B1 (ko) * 2014-09-29 2021-11-22 삼성디스플레이 주식회사 박막트랜지스터 기판, 이를 구비한 디스플레이 장치, 박막트랜지스터 기판 제조방법 및 디스플레이 장치 제조방법
KR102245780B1 (ko) * 2014-11-03 2021-04-29 삼성디스플레이 주식회사 레이저 결정화 시스템, 레이저 결정화방법 및 표시장치의 제조방법
KR102324622B1 (ko) * 2018-12-12 2021-11-12 어플라이드 머티리얼즈 이스라엘 리미티드 프로세스 모니터링

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4155779A (en) * 1978-08-21 1979-05-22 Bell Telephone Laboratories, Incorporated Control techniques for annealing semiconductors
US4309225A (en) * 1979-09-13 1982-01-05 Massachusetts Institute Of Technology Method of crystallizing amorphous material with a moving energy beam
JPS6049977B2 (ja) * 1980-04-23 1985-11-06 松下電器産業株式会社 光デイスク装置
DE3543632A1 (de) * 1985-12-11 1987-06-19 Hoechst Ag Verfahren und vorrichtung zur bestimmung von dicken- und/oder orientierungsaenderungen innerhalb einer optisch aktiven materialbahn
US4865683A (en) * 1988-11-03 1989-09-12 Lasa Industries, Inc. Method and apparatus for laser process control
US5049816A (en) * 1990-05-31 1991-09-17 Texas Instruments Incorporated Semiconductor substrate minority carrier lifetime measurements
GB2245741A (en) * 1990-06-27 1992-01-08 Philips Electronic Associated Active matrix liquid crystal devices
US5086430A (en) * 1990-12-14 1992-02-04 Bell Communications Research, Inc. Phase-locked array of reflectivity-modulated surface-emitting lasers
US5459321A (en) * 1990-12-26 1995-10-17 The United States Of America As Represented By The Secretary Of The Navy Laser hardened backside illuminated optical detector
US5372836A (en) * 1992-03-27 1994-12-13 Tokyo Electron Limited Method of forming polycrystalling silicon film in process of manufacturing LCD
US5659390A (en) * 1995-02-09 1997-08-19 Inspex, Inc. Method and apparatus for detecting particles on a surface of a semiconductor wafer having repetitive patterns

Also Published As

Publication number Publication date
GB9624715D0 (en) 1997-01-15
JP2000504498A (ja) 2000-04-11
EP0879477B1 (de) 2008-03-12
WO1998024118A1 (en) 1998-06-04
EP0879477A1 (de) 1998-11-25
US6080236A (en) 2000-06-27
DE69738565T2 (de) 2009-04-02
KR100447383B1 (ko) 2004-10-15
KR19990082075A (ko) 1999-11-15

Similar Documents

Publication Publication Date Title
DE69738565D1 (de) Herstellung einer elektronischen anordnung durch k
DE69415059D1 (de) Verbesserungen zur Herstellung integrierter Schaltungen
DE69404984D1 (de) Anordnung einer triebwerkgondel
DE69524145D1 (de) Durch verschiedene stromversorgungen gespeiste integrierte schaltung
DE69525922D1 (de) Herstellung eines elektrischen Bauteils
DE69931747D1 (de) Herstellung eines leistungshalbleiterbauelementes
DE69503260D1 (de) Verbindungsanordnung einer elektrischen Schaltung
DE69735588D1 (de) Herstellung eines bauteils für eine halbleiterschaltung
DE69524690D1 (de) Elektronische Sekretärin
DE69734931D1 (de) Herstellung einer honigwabenstruktur
ATE296878T1 (de) Herstellung ionisch-gebundener polyphosphacen- mikrosphären durch koazervierung
DE69525273D1 (de) Verfahren zur Herstellung einer integrierten Schaltung
DE69321070D1 (de) Struktur zur Kühlung einer integrierten Schaltung
DE69819877D1 (de) Elektronisches Mikrometer
KR960011830A (ko) 전자악기
DE69734465D1 (de) Verwendung eines lokalen einbauleiters in einer integrierten schaltung zur herstellung von versetzt angeordneten leiterbahnen
DE69718134D1 (de) Verfahren zur Herstellung einer hochintegrierten Schaltung
DE69734501D1 (de) Verfahren zur herstellung einer elektronischen anordnung
DE69717054D1 (de) Verbesserungen an oder bezüglich integrierten Schaltungen
DE69404163D1 (de) Anordnung zur herstellung einer elektrischen verbindung
DE69517107D1 (de) Vorrichtung zur Fachbildungsmechanismenwahl durch Biegeelemente
DE69736971D1 (de) Herstellungsverfahren einer integrierten leistungsschaltungsanordnung
DE69731265D1 (de) Struktur einer elektronischen Vorrichtung
DE69611826D1 (de) Schaltung zur Zustandsdiagnose einer elektrischen Last
DE69517758D1 (de) Prüfung einer integrierten Schaltungsanordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition