DE69736144D1 - Teil für Halbleiter aus Aluminiumnitrid-Substratmaterial und seine Herstellungsmethode - Google Patents

Teil für Halbleiter aus Aluminiumnitrid-Substratmaterial und seine Herstellungsmethode

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Publication number
DE69736144D1
DE69736144D1 DE69736144T DE69736144T DE69736144D1 DE 69736144 D1 DE69736144 D1 DE 69736144D1 DE 69736144 T DE69736144 T DE 69736144T DE 69736144 T DE69736144 T DE 69736144T DE 69736144 D1 DE69736144 D1 DE 69736144D1
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DE
Germany
Prior art keywords
manufacturing
aluminum nitride
substrate material
nitride substrate
material semiconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69736144T
Other languages
English (en)
Other versions
DE69736144T2 (de
Inventor
Kazutaka Sasaki
Hirohiko Nakata
Akira Sasame
Mitsunori Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69736144D1 publication Critical patent/DE69736144D1/de
Application granted granted Critical
Publication of DE69736144T2 publication Critical patent/DE69736144T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
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    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
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    • C04B35/626Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
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    • C04B35/63Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
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    • H01L2924/15738Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747Copper [Cu] as principal constituent
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12576Boride, carbide or nitride component
DE69736144T 1996-02-05 1997-02-05 Teil für Halbleiter aus Aluminiumnitrid-Substratmaterial und seine Herstellungsmethode Expired - Lifetime DE69736144T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1850496 1996-02-05
JP1850496 1996-02-05
JP33683096A JP3845925B2 (ja) 1996-02-05 1996-12-17 窒化アルミニウム基材を用いた半導体装置用部材及びその製造方法
JP33683096 1996-12-17

Publications (2)

Publication Number Publication Date
DE69736144D1 true DE69736144D1 (de) 2006-08-03
DE69736144T2 DE69736144T2 (de) 2007-05-03

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DE69736144T Expired - Lifetime DE69736144T2 (de) 1996-02-05 1997-02-05 Teil für Halbleiter aus Aluminiumnitrid-Substratmaterial und seine Herstellungsmethode

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Country Link
US (1) US5998043A (de)
EP (1) EP0788153B1 (de)
JP (1) JP3845925B2 (de)
CA (1) CA2196641A1 (de)
DE (1) DE69736144T2 (de)

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EP0788153A2 (de) 1997-08-06
US5998043A (en) 1999-12-07
EP0788153B1 (de) 2006-06-21
JPH09275166A (ja) 1997-10-21
DE69736144T2 (de) 2007-05-03
JP3845925B2 (ja) 2006-11-15
CA2196641A1 (en) 1997-08-06
EP0788153A3 (de) 1998-05-13

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