DE69735431D1 - Strahlungsdetektor mit grossen abmessungen - Google Patents

Strahlungsdetektor mit grossen abmessungen

Info

Publication number
DE69735431D1
DE69735431D1 DE69735431T DE69735431T DE69735431D1 DE 69735431 D1 DE69735431 D1 DE 69735431D1 DE 69735431 T DE69735431 T DE 69735431T DE 69735431 T DE69735431 T DE 69735431T DE 69735431 D1 DE69735431 D1 DE 69735431D1
Authority
DE
Germany
Prior art keywords
radiation detector
large dimensions
dimensions
detector
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69735431T
Other languages
English (en)
Other versions
DE69735431T2 (de
Inventor
Gerard Destefanis
Michel Wolny
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE69735431D1 publication Critical patent/DE69735431D1/de
Publication of DE69735431T2 publication Critical patent/DE69735431T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H01L27/1465—Infrared imagers of the hybrid type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
DE69735431T 1996-10-01 1997-09-29 Strahlungsdetektor mit grossen abmessungen Expired - Lifetime DE69735431T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR9611937 1996-10-01
FR9611937A FR2754107B1 (fr) 1996-10-01 1996-10-01 Detecteur de rayonnement photonique de grandes dimensions
PCT/FR1997/001714 WO1998015016A1 (fr) 1996-10-01 1997-09-29 Detecteur de rayonnement photonique de grandes dimensions

Publications (2)

Publication Number Publication Date
DE69735431D1 true DE69735431D1 (de) 2006-05-04
DE69735431T2 DE69735431T2 (de) 2006-10-26

Family

ID=9496225

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69735431T Expired - Lifetime DE69735431T2 (de) 1996-10-01 1997-09-29 Strahlungsdetektor mit grossen abmessungen

Country Status (6)

Country Link
US (1) US6188070B1 (de)
EP (1) EP0864179B1 (de)
JP (1) JP2000503170A (de)
DE (1) DE69735431T2 (de)
FR (1) FR2754107B1 (de)
WO (1) WO1998015016A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3597392B2 (ja) * 1998-08-07 2004-12-08 シャープ株式会社 二次元画像検出器
KR100718878B1 (ko) * 2005-06-28 2007-05-17 (주)실리콘화일 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법
US8669630B2 (en) 2011-03-04 2014-03-11 Societe Francaise de Detecteurs Infrarouges—Sofradir Detection matrix with improved biasing conditions and fabrication method
FR2983640B1 (fr) 2011-12-02 2014-06-20 Soc Fr Detecteurs Infrarouges Sofradir Matrice de detection compacte a conditions de polarisation ameliorees
RU2564813C1 (ru) * 2014-03-27 2015-10-10 Акционерное общество "НПО "Орион" (АО "НПО "Орион") Многокристальное многоцветное фотоприемное устройство с расширенной спектральной характеристикой квантовой эффективности

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2612335A1 (fr) * 1987-03-12 1988-09-16 Telecommunications Sa Photodiode hgcdte a reponse rapide
US5512750A (en) * 1994-06-03 1996-04-30 Martin Marietta Corporation A-dual band IR sensor having two monolithically integrated staring detector arrays for simultaneous, coincident image readout

Also Published As

Publication number Publication date
JP2000503170A (ja) 2000-03-14
WO1998015016A1 (fr) 1998-04-09
EP0864179A1 (de) 1998-09-16
US6188070B1 (en) 2001-02-13
FR2754107A1 (fr) 1998-04-03
EP0864179B1 (de) 2006-03-08
DE69735431T2 (de) 2006-10-26
FR2754107B1 (fr) 1998-10-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition