DE69733379D1 - LSI-Gehäuse und Herstellungsverfahren dafür - Google Patents

LSI-Gehäuse und Herstellungsverfahren dafür

Info

Publication number
DE69733379D1
DE69733379D1 DE69733379T DE69733379T DE69733379D1 DE 69733379 D1 DE69733379 D1 DE 69733379D1 DE 69733379 T DE69733379 T DE 69733379T DE 69733379 T DE69733379 T DE 69733379T DE 69733379 D1 DE69733379 D1 DE 69733379D1
Authority
DE
Germany
Prior art keywords
manufacturing process
lsi package
lsi
package
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69733379T
Other languages
English (en)
Other versions
DE69733379T2 (de
Inventor
Tatsuo Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69733379D1 publication Critical patent/DE69733379D1/de
Application granted granted Critical
Publication of DE69733379T2 publication Critical patent/DE69733379T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/647—Resistive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
DE69733379T 1996-03-18 1997-03-13 LSI-Gehäuse und Herstellungsverfahren dafür Expired - Fee Related DE69733379T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8880496 1996-03-18
JP8088804A JP2812358B2 (ja) 1996-03-18 1996-03-18 Ｌｓｉパッケージおよびｌｓｉパッケージ製造方法

Publications (2)

Publication Number Publication Date
DE69733379D1 true DE69733379D1 (de) 2005-07-07
DE69733379T2 DE69733379T2 (de) 2005-10-13

Family

ID=13953075

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69733379T Expired - Fee Related DE69733379T2 (de) 1996-03-18 1997-03-13 LSI-Gehäuse und Herstellungsverfahren dafür

Country Status (5)

Country Link
US (2) US5861664A (de)
EP (1) EP0797254B1 (de)
JP (1) JP2812358B2 (de)
CA (1) CA2200154C (de)
DE (1) DE69733379T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6423571B2 (en) 1994-09-20 2002-07-23 Hitachi, Ltd. Method of making a semiconductor device having a stress relieving mechanism
WO1996009645A1 (fr) * 1994-09-20 1996-03-28 Hitachi, Ltd. Composant a semiconducteurs et sa structure de montage
JP2833521B2 (ja) * 1995-05-18 1998-12-09 日本電気株式会社 配線基板
DE59814050D1 (de) * 1997-11-11 2007-08-16 Ccs Technology Inc Verfahren zur Verwaltung und Dokumentation von Kontaktstellen eines Verdrahtungsnetzes
AU2004201747B2 (en) * 1999-05-25 2005-06-30 Zamtec Limited Compact printer with nozzle capping mechanism
TW434664B (en) * 1999-12-29 2001-05-16 Advanced Semiconductor Eng Lead-bond type chip package and method for making the same
US20020199159A1 (en) * 2001-06-22 2002-12-26 Vinson Dong Naked chip motherboard module
JP3888263B2 (ja) * 2001-10-05 2007-02-28 株式会社村田製作所 積層セラミック電子部品の製造方法
JP2003304065A (ja) * 2002-04-08 2003-10-24 Sony Corp 回路基板装置及びその製造方法、並びに半導体装置及びその製造方法
US6566761B1 (en) * 2002-05-03 2003-05-20 Applied Micro Circuits Corporation Electronic device package with high speed signal interconnect between die pad and external substrate pad
US20040084766A1 (en) * 2002-10-30 2004-05-06 Pei-Ying Shieh System-in-a-package device
JP5548060B2 (ja) * 2010-07-28 2014-07-16 株式会社東芝 半導体装置
US11489038B2 (en) * 2017-08-29 2022-11-01 Micron Technology, Inc. Capacitors having vertical contacts extending through conductive tiers

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4221047A (en) * 1979-03-23 1980-09-09 International Business Machines Corporation Multilayered glass-ceramic substrate for mounting of semiconductor device
JPS5932898B2 (ja) * 1980-12-11 1984-08-11 富士通株式会社 高密度実装構造
US4407007A (en) * 1981-05-28 1983-09-27 International Business Machines Corporation Process and structure for minimizing delamination in the fabrication of multi-layer ceramic substrate
JP2646091B2 (ja) * 1987-08-12 1997-08-25 新光電気工業株式会社 電子部品用基体
JP2569617B2 (ja) * 1987-10-30 1997-01-08 日本電気株式会社 集積回路装置
JPH01161801A (ja) * 1987-12-18 1989-06-26 Hirose Electric Co Ltd 高速パルス用終端抵抗アレイ
JPH0632385B2 (ja) * 1988-01-30 1994-04-27 日本電信電話株式会社 多層配線基板
JPH03227561A (ja) * 1990-02-01 1991-10-08 Ngk Spark Plug Co Ltd 集積回路用パッケージ
JP2975711B2 (ja) * 1991-04-08 1999-11-10 株式会社東芝 終端抵抗内蔵型多層配線基板

Also Published As

Publication number Publication date
EP0797254A3 (de) 1999-07-28
CA2200154A1 (en) 1997-09-18
CA2200154C (en) 2000-10-17
JPH09260549A (ja) 1997-10-03
US6153447A (en) 2000-11-28
DE69733379T2 (de) 2005-10-13
EP0797254B1 (de) 2005-06-01
JP2812358B2 (ja) 1998-10-22
US5861664A (en) 1999-01-19
EP0797254A2 (de) 1997-09-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee