DE69729679D1 - Schaltkreis zur Erzeugung einer periodischen Wellenform - Google Patents

Schaltkreis zur Erzeugung einer periodischen Wellenform

Info

Publication number
DE69729679D1
DE69729679D1 DE69729679T DE69729679T DE69729679D1 DE 69729679 D1 DE69729679 D1 DE 69729679D1 DE 69729679 T DE69729679 T DE 69729679T DE 69729679 T DE69729679 T DE 69729679T DE 69729679 D1 DE69729679 D1 DE 69729679D1
Authority
DE
Germany
Prior art keywords
generating
circuit
periodic waveform
waveform
periodic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69729679T
Other languages
English (en)
Other versions
DE69729679T2 (de
Inventor
Kunihiro Arai
Hideaki Matsuzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of DE69729679D1 publication Critical patent/DE69729679D1/de
Publication of DE69729679T2 publication Critical patent/DE69729679T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/357—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bulk negative resistance devices, e.g. Gunn-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/36—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductors, not otherwise provided for
DE69729679T 1996-04-04 1997-04-03 Schaltkreis zur Erzeugung einer periodischen Wellenform Expired - Lifetime DE69729679T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP8217896 1996-04-04
JP8217896 1996-04-04
JP34197596 1996-12-20
JP34197596A JP3508809B2 (ja) 1996-04-04 1996-12-20 波形発生回路

Publications (2)

Publication Number Publication Date
DE69729679D1 true DE69729679D1 (de) 2004-08-05
DE69729679T2 DE69729679T2 (de) 2005-07-21

Family

ID=26423191

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69729679T Expired - Lifetime DE69729679T2 (de) 1996-04-04 1997-04-03 Schaltkreis zur Erzeugung einer periodischen Wellenform

Country Status (4)

Country Link
US (1) US5770958A (de)
EP (1) EP0800272B1 (de)
JP (1) JP3508809B2 (de)
DE (1) DE69729679T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL130901A (en) * 1999-07-12 2004-12-15 Technion Res & Dev Foundation Improved high-power bipolar transistor with an emitter current density limitation
US6362660B1 (en) * 1999-07-13 2002-03-26 Texas Instruments Incorporated CMOS latch and register circuitry using quantum mechanical tunneling structures
US6596617B1 (en) 2000-06-22 2003-07-22 Progressant Technologies, Inc. CMOS compatible process for making a tunable negative differential resistance (NDR) device
US6559470B2 (en) 2000-06-22 2003-05-06 Progressed Technologies, Inc. Negative differential resistance field effect transistor (NDR-FET) and circuits using the same
US6518589B2 (en) 2000-06-22 2003-02-11 Progressant Technologies, Inc. Dual mode FET & logic circuit having negative differential resistance mode
US6754104B2 (en) * 2000-06-22 2004-06-22 Progressant Technologies, Inc. Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET
US6594193B2 (en) 2000-06-22 2003-07-15 Progressent Technologies, Inc. Charge pump for negative differential resistance transistor
US6512274B1 (en) 2000-06-22 2003-01-28 Progressant Technologies, Inc. CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same
US6724655B2 (en) 2000-06-22 2004-04-20 Progressant Technologies, Inc. Memory cell using negative differential resistance field effect transistors
US6479862B1 (en) * 2000-06-22 2002-11-12 Progressant Technologies, Inc. Charge trapping device and method for implementing a transistor having a negative differential resistance mode
US7453083B2 (en) * 2001-12-21 2008-11-18 Synopsys, Inc. Negative differential resistance field effect transistor for implementing a pull up element in a memory cell
US6956262B1 (en) 2001-12-21 2005-10-18 Synopsys Inc. Charge trapping pull up element
US6567292B1 (en) 2002-06-28 2003-05-20 Progressant Technologies, Inc. Negative differential resistance (NDR) element and memory with reduced soft error rate
US6847562B2 (en) * 2002-06-28 2005-01-25 Progressant Technologies, Inc. Enhanced read and write methods for negative differential resistance (NDR) based memory device
US6853035B1 (en) 2002-06-28 2005-02-08 Synopsys, Inc. Negative differential resistance (NDR) memory device with reduced soft error rate
US6912151B2 (en) * 2002-06-28 2005-06-28 Synopsys, Inc. Negative differential resistance (NDR) based memory device with reduced body effects
US6864104B2 (en) * 2002-06-28 2005-03-08 Progressant Technologies, Inc. Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects
US7095659B2 (en) * 2002-06-28 2006-08-22 Progressant Technologies, Inc. Variable voltage supply bias and methods for negative differential resistance (NDR) based memory device
US6795337B2 (en) * 2002-06-28 2004-09-21 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US7098472B2 (en) * 2002-06-28 2006-08-29 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US6812084B2 (en) * 2002-12-09 2004-11-02 Progressant Technologies, Inc. Adaptive negative differential resistance device
US6980467B2 (en) * 2002-12-09 2005-12-27 Progressant Technologies, Inc. Method of forming a negative differential resistance device
US7012833B2 (en) * 2002-12-09 2006-03-14 Progressant Technologies, Inc. Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs)
US6849483B2 (en) * 2002-12-09 2005-02-01 Progressant Technologies, Inc. Charge trapping device and method of forming the same
US6979580B2 (en) * 2002-12-09 2005-12-27 Progressant Technologies, Inc. Process for controlling performance characteristics of a negative differential resistance (NDR) device
US6806117B2 (en) * 2002-12-09 2004-10-19 Progressant Technologies, Inc. Methods of testing/stressing a charge trapping device
US7005711B2 (en) * 2002-12-20 2006-02-28 Progressant Technologies, Inc. N-channel pull-up element and logic circuit
KR101634191B1 (ko) * 2011-10-28 2016-07-08 휴렛 팩커드 엔터프라이즈 디벨롭먼트 엘피 금속-절연체 상전이 플립-플롭

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1168964B (de) * 1961-05-31 1964-04-30 Intermetall Schaltungsanordnung zum binaeren Zaehlen oder zum Frequenzteilen
DE1438459A1 (de) * 1961-11-20 1968-10-17 Itt Ind Gmbh Deutsche Drehstromgenerator fuer in weiten Grenzen einstellbare Frequenzen
GB1320379A (en) * 1969-09-19 1973-06-13 Matsushita Electric Ind Co Ltd Circuit arrangement utilizing oscillatory diode
US3740576A (en) * 1970-08-04 1973-06-19 Licentia Gmbh Dynamic logic interconnection
US4553047A (en) * 1983-01-06 1985-11-12 International Business Machines Corporation Regulator for substrate voltage generator
US5313117A (en) * 1991-07-22 1994-05-17 Nippon Telegraph And Telephone Corporation Semiconductor logic circuit using two n-type negative resistance devices
US5479129A (en) * 1993-11-24 1995-12-26 At&T Corp. Variable propagation delay digital signal inverter
JP2970389B2 (ja) * 1994-03-30 1999-11-02 日本電気株式会社 フリップ・フロップ回路

Also Published As

Publication number Publication date
EP0800272A2 (de) 1997-10-08
JPH09326677A (ja) 1997-12-16
DE69729679T2 (de) 2005-07-21
EP0800272A3 (de) 1999-04-21
US5770958A (en) 1998-06-23
JP3508809B2 (ja) 2004-03-22
EP0800272B1 (de) 2004-06-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition