DE69724159D1 - Optische lithographie mit extrem hoher auflösung - Google Patents

Optische lithographie mit extrem hoher auflösung

Info

Publication number
DE69724159D1
DE69724159D1 DE69724159T DE69724159T DE69724159D1 DE 69724159 D1 DE69724159 D1 DE 69724159D1 DE 69724159 T DE69724159 T DE 69724159T DE 69724159 T DE69724159 T DE 69724159T DE 69724159 D1 DE69724159 D1 DE 69724159D1
Authority
DE
Germany
Prior art keywords
high resolution
extremely high
optical lithography
lithography
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69724159T
Other languages
English (en)
Other versions
DE69724159T2 (de
Inventor
Hans Biebuyck
Bruno Michel
Heinz Schmid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69724159D1 publication Critical patent/DE69724159D1/de
Publication of DE69724159T2 publication Critical patent/DE69724159T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69724159T 1997-09-19 1997-09-19 Optische lithographie mit extrem hoher auflösung Expired - Lifetime DE69724159T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB1997/001124 WO1999015933A1 (en) 1997-09-19 1997-09-19 Optical lithography beyond conventional resolution limits

Publications (2)

Publication Number Publication Date
DE69724159D1 true DE69724159D1 (de) 2003-09-18
DE69724159T2 DE69724159T2 (de) 2004-05-06

Family

ID=11004607

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69724159T Expired - Lifetime DE69724159T2 (de) 1997-09-19 1997-09-19 Optische lithographie mit extrem hoher auflösung

Country Status (7)

Country Link
US (1) US6569575B1 (de)
EP (1) EP1021747B1 (de)
JP (1) JP3335343B2 (de)
KR (1) KR100413906B1 (de)
DE (1) DE69724159T2 (de)
TW (1) TW432480B (de)
WO (1) WO1999015933A1 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4017795B2 (ja) 1999-08-27 2007-12-05 富士フイルム株式会社 光波長変換素子およびその作製方法
US6653030B2 (en) * 2002-01-23 2003-11-25 Hewlett-Packard Development Company, L.P. Optical-mechanical feature fabrication during manufacture of semiconductors and other micro-devices and nano-devices that include micron and sub-micron features
DE10332112A1 (de) * 2003-07-09 2005-01-27 Carl Zeiss Smt Ag Projektionsbelichtungsverfahren und Projektionsbelichtungssystem
TW593128B (en) * 2002-05-17 2004-06-21 Fan-Gen Tzeng Method for manufacturing three-dimensional microstructure
JP4036820B2 (ja) * 2002-12-18 2008-01-23 インターナショナル・ビジネス・マシーンズ・コーポレーション サブ波長構造体の製造
DE10326223B4 (de) * 2003-06-11 2008-07-31 Technische Universität Dresden Verfahren zur Strukturierung dünner Schichten mittels optischer Lithographie und Anordnung zur Durchführung der optischen Lithographie
US7932020B2 (en) * 2003-07-10 2011-04-26 Takumi Technology Corporation Contact or proximity printing using a magnified mask image
JP4522068B2 (ja) * 2003-09-12 2010-08-11 キヤノン株式会社 近接場光を発生させる構造体、近接場光の発生方法、及び、近接場露光装置
EP1526411A1 (de) * 2003-10-24 2005-04-27 Obducat AB Gerät und Methode zum Ausrichten von Oberflächen
US20070240757A1 (en) * 2004-10-15 2007-10-18 The Trustees Of Boston College Solar cells using arrays of optical rectennas
KR101352360B1 (ko) * 2005-04-27 2014-01-15 오브듀캇 아베 물체에 패턴을 전사하기 위한 수단
WO2007025013A2 (en) * 2005-08-24 2007-03-01 The Trustees Of Boston College Nanoscale optical microscope
US7754964B2 (en) * 2005-08-24 2010-07-13 The Trustees Of Boston College Apparatus and methods for solar energy conversion using nanocoax structures
KR20080069958A (ko) 2005-08-24 2008-07-29 더 트러스티스 오브 보스턴 칼리지 나노 스케일 코메탈 구조물을 사용하는 태양 에너지 변환을위한 장치 및 방법
US7649665B2 (en) * 2005-08-24 2010-01-19 The Trustees Of Boston College Apparatus and methods for optical switching using nanoscale optics
US7589880B2 (en) * 2005-08-24 2009-09-15 The Trustees Of Boston College Apparatus and methods for manipulating light using nanoscale cometal structures
JP4825697B2 (ja) * 2007-01-25 2011-11-30 株式会社ミツトヨ デジタル式変位測定器
CN101627479B (zh) * 2007-01-30 2011-06-15 索拉斯特公司 光电池及其制造方法
WO2008143721A2 (en) * 2007-02-12 2008-11-27 Solasta, Inc. Photovoltaic cell with reduced hot-carrier cooling
WO2009005805A2 (en) * 2007-07-03 2009-01-08 Solasta, Inc. Distributed coax photovoltaic device
US8518633B2 (en) * 2008-01-22 2013-08-27 Rolith Inc. Large area nanopatterning method and apparatus
FR2960658B1 (fr) * 2010-05-28 2013-05-24 Commissariat Energie Atomique Lithographie par impression nanometrique
US8975195B2 (en) * 2013-02-01 2015-03-10 GlobalFoundries, Inc. Methods for optical proximity correction in the design and fabrication of integrated circuits
EP2950124A1 (de) * 2014-05-28 2015-12-02 Paul Scherrer Institut Wellenleiter auf Basis integrierter photonischer Nanodrähte
TWI619671B (zh) * 2014-06-26 2018-04-01 麻省理工學院 使用柔性膜遮罩進行奈米製造之方法及設備
EP3223063A1 (de) 2016-03-24 2017-09-27 Thomson Licensing Vorrichtung zur bildung von einem feldintensitätsmuster im nahbereich aus einfallenden elektromagnetischen wellen
EP3312660A1 (de) 2016-10-21 2018-04-25 Thomson Licensing Vorrichtung zur bildung von mindestens einem geneigten fokussierten strahl im nahbereich aus einfallenden elektromagnetischen wellen
EP3312646A1 (de) 2016-10-21 2018-04-25 Thomson Licensing Vorrichtung und verfahren zur abschirmung von mindestens einem sub-wellenlängen-skala-objekt von einer einfallenden elektromagnetischen welle
EP3312674A1 (de) * 2016-10-21 2018-04-25 Thomson Licensing Fotolithografische vorrichtung zum erzeugen eines musters auf einem fotoresistsubstrat
EP3385219B1 (de) 2017-04-07 2021-07-14 InterDigital CE Patent Holdings Verfahren zur herstellung einer vorrichtung zum ausbilden wenigstens eines fokussierten strahls in einem nahbereich

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4088896A (en) * 1976-12-20 1978-05-09 Rockwell International Corporation Actinic radiation emissive pattern defining masks for fine line lithography and lithography utilizing such masks
US4211834A (en) * 1977-12-30 1980-07-08 International Business Machines Corporation Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask
US5340637A (en) * 1986-09-16 1994-08-23 Hitachi, Ltd. Optical device diffraction gratings and a photomask for use in the same
DE69118117T2 (de) * 1990-11-19 1996-10-24 At & T Corp Optisches Nahfeldabtastmikroskop und dessen Anwendungen
JPH04190353A (ja) * 1990-11-26 1992-07-08 Oki Electric Ind Co Ltd ホトマスクおよびその製造方法
JP3412724B2 (ja) * 1995-03-07 2003-06-03 日本電信電話株式会社 金型の作製方法

Also Published As

Publication number Publication date
EP1021747A1 (de) 2000-07-26
JP2001517865A (ja) 2001-10-09
TW432480B (en) 2001-05-01
JP3335343B2 (ja) 2002-10-15
EP1021747B1 (de) 2003-08-13
US6569575B1 (en) 2003-05-27
WO1999015933A1 (en) 1999-04-01
DE69724159T2 (de) 2004-05-06
KR100413906B1 (ko) 2004-01-07
KR20010023603A (ko) 2001-03-26

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Legal Events

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8320 Willingness to grant licences declared (paragraph 23)