DE69722873D1 - Hoch korrosionsbeständiges Siliziumcarbidprodukt - Google Patents

Hoch korrosionsbeständiges Siliziumcarbidprodukt

Info

Publication number
DE69722873D1
DE69722873D1 DE69722873T DE69722873T DE69722873D1 DE 69722873 D1 DE69722873 D1 DE 69722873D1 DE 69722873 T DE69722873 T DE 69722873T DE 69722873 T DE69722873 T DE 69722873T DE 69722873 D1 DE69722873 D1 DE 69722873D1
Authority
DE
Germany
Prior art keywords
silicon carbide
corrosion resistant
high corrosion
resistant silicon
carbide product
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69722873T
Other languages
English (en)
Other versions
DE69722873T2 (de
Inventor
Takahiro Nakayama
Nobuo Kageyama
Atsuyoshi Takenaka
Yoichi Kamisuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of DE69722873D1 publication Critical patent/DE69722873D1/de
Application granted granted Critical
Publication of DE69722873T2 publication Critical patent/DE69722873T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C04B35/573—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by reaction sintering or recrystallisation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C04B2235/725—Metal content
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/914—Differential etching apparatus including particular materials of construction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Products (AREA)
DE69722873T 1996-08-27 1997-08-27 Hoch korrosionsbeständiges Siliziumcarbidprodukt Expired - Lifetime DE69722873T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24412896 1996-08-27
JP24412896 1996-08-27

Publications (2)

Publication Number Publication Date
DE69722873D1 true DE69722873D1 (de) 2003-07-24
DE69722873T2 DE69722873T2 (de) 2004-05-19

Family

ID=17114188

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69722873T Expired - Lifetime DE69722873T2 (de) 1996-08-27 1997-08-27 Hoch korrosionsbeständiges Siliziumcarbidprodukt

Country Status (3)

Country Link
US (1) US5942454A (de)
EP (1) EP0826646B1 (de)
DE (1) DE69722873T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555452B2 (en) * 1997-11-18 2003-04-29 Technologies And Devices International, Inc. Method for growing p-type III-V compound material utilizing HVPE techniques
ATE345577T1 (de) * 1998-03-31 2006-12-15 Lam Res Corp Plasma-bearbeitungs-kammer und verfahren zur kontrolle von verunreinigungen
US6464843B1 (en) 1998-03-31 2002-10-15 Lam Research Corporation Contamination controlling method and apparatus for a plasma processing chamber
JP2000007438A (ja) * 1998-06-23 2000-01-11 Ngk Insulators Ltd 高抵抗再結晶炭化珪素、耐蝕性部材、高抵抗再結晶炭化珪素の製造方法および耐蝕性部材の製造方法
US6280496B1 (en) * 1998-09-14 2001-08-28 Sumitomo Electric Industries, Ltd. Silicon carbide based composite material and manufacturing method thereof
US6419757B2 (en) * 1998-12-08 2002-07-16 Bridgestone, Corporation Method for cleaning sintered silicon carbide in wet condition
JP2001048667A (ja) * 1999-08-13 2001-02-20 Asahi Glass Co Ltd セラミックス部品の接合方法
US6451157B1 (en) 1999-09-23 2002-09-17 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6673198B1 (en) 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
JP2002226274A (ja) * 2001-01-25 2002-08-14 Ngk Insulators Ltd 耐蝕性セラミック材料、その製造方法および半導体製造用製品
US20040173948A1 (en) * 2002-09-19 2004-09-09 Pandelisev Kiril A. Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication
US20030233977A1 (en) * 2002-06-20 2003-12-25 Yeshwanth Narendar Method for forming semiconductor processing components
US6825123B2 (en) * 2003-04-15 2004-11-30 Saint-Goban Ceramics & Plastics, Inc. Method for treating semiconductor processing components and components formed thereby
US20050145584A1 (en) * 2004-01-06 2005-07-07 Buckley Richard F. Wafer boat with interference fit wafer supports
US7501370B2 (en) * 2004-01-06 2009-03-10 Saint-Gobain Ceramics & Plastics, Inc. High purity silicon carbide wafer boats
JP5095215B2 (ja) * 2004-09-30 2012-12-12 イビデン株式会社 多孔体の製造方法、多孔体及びハニカム構造体
DE102005017192B4 (de) * 2005-04-13 2013-11-14 Forschungszentrum Jülich GmbH Vorrichtung sowie Verfahren zur Messung der stabilen Isotopenverhältnisse von Sauerstoff, Wasserstoff und Stickstoff aus anorganischen und organischen Verbindungen sowie zur Bestimmung der quantitativen elementaren Zusammensetzung der Verbindungen
TWI361469B (en) * 2007-03-09 2012-04-01 Rohm & Haas Elect Mat Chemical vapor deposited silicon carbide articles
CN101884099B (zh) * 2007-12-20 2012-07-25 圣戈本陶瓷及塑料股份有限公司 用于处理半导体加工部件的方法以及由此形成的部件
WO2011049938A2 (en) * 2009-10-20 2011-04-28 Saint-Gobain Ceramics & Plastics, Inc. Microelectronic processing component having a corrosion-resistant layer, microelectronic workpiece processing apparatus incorporating same, and method of forming an article having the corrosion-resistant layer
JP5730521B2 (ja) * 2010-09-08 2015-06-10 株式会社日立ハイテクノロジーズ 熱処理装置
EP3279923B1 (de) 2015-03-31 2022-05-04 Hokuriku Seikei Industrial Co., Ltd. Siliciumcarbidelement für plasmaverarbeitungsgeräte und verfahren zur herstellung davon
WO2018061778A1 (ja) 2016-09-27 2018-04-05 北陸成型工業株式会社 プラズマ処理装置用炭化ケイ素部材及びその製造方法
CN114395797B (zh) * 2021-11-26 2023-05-16 华灿光电(苏州）有限公司 高阻硅外延片生长方法及生长设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60138913A (ja) * 1983-12-26 1985-07-23 Toshiba Ceramics Co Ltd 半導体拡散炉管の製造方法
JPS6472964A (en) * 1987-09-11 1989-03-17 Shinetsu Chemical Co Production of silicon carbide jig for semiconductor diffusion furnace
EP0466109B1 (de) * 1990-07-10 1994-11-02 Sumitomo Metal Industries, Ltd. Verfahren zur Herstellung eines Verbundkörpers auf der Basis von Siliziumcarbid
EP0486938B1 (de) * 1990-11-20 1999-05-19 Asahi Glass Company Ltd. Wärmebehandlungsapparate für Halbleiter und hochreine Siliciumcarbidteile für die Apparate und Verfahren zu ihrer Herstellung
US5589116A (en) * 1991-07-18 1996-12-31 Sumitomo Metal Industries, Ltd. Process for preparing a silicon carbide sintered body for use in semiconductor equipment
JP2565024B2 (ja) * 1991-07-18 1996-12-18 住友金属工業株式会社 半導体治具用炭化珪素粉末の製造方法
JP2660650B2 (ja) * 1993-04-08 1997-10-08 大平洋ランダム株式会社 α型炭化珪素の製造方法
US5770324A (en) * 1997-03-03 1998-06-23 Saint-Gobain Industrial Ceramics, Inc. Method of using a hot pressed silicon carbide dummy wafer

Also Published As

Publication number Publication date
EP0826646A1 (de) 1998-03-04
US5942454A (en) 1999-08-24
DE69722873T2 (de) 2004-05-19
EP0826646B1 (de) 2003-06-18

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