DE69722696D1 - Pegelumsetzer für hohe Spannung mit einem CMOS-Transistor mit dünner Gate-Isolationsschicht - Google Patents

Pegelumsetzer für hohe Spannung mit einem CMOS-Transistor mit dünner Gate-Isolationsschicht

Info

Publication number
DE69722696D1
DE69722696D1 DE69722696T DE69722696T DE69722696D1 DE 69722696 D1 DE69722696 D1 DE 69722696D1 DE 69722696 T DE69722696 T DE 69722696T DE 69722696 T DE69722696 T DE 69722696T DE 69722696 D1 DE69722696 D1 DE 69722696D1
Authority
DE
Germany
Prior art keywords
high voltage
insulation layer
gate insulation
level converter
cmos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69722696T
Other languages
English (en)
Inventor
Mitsuasa Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Electronics Corp filed Critical NEC Electronics Corp
Application granted granted Critical
Publication of DE69722696D1 publication Critical patent/DE69722696D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356017—Bistable circuits using additional transistors in the input circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69722696T 1996-03-29 1997-03-27 Pegelumsetzer für hohe Spannung mit einem CMOS-Transistor mit dünner Gate-Isolationsschicht Expired - Lifetime DE69722696D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8077227A JP2803624B2 (ja) 1996-03-29 1996-03-29 レベルシフト回路

Publications (1)

Publication Number Publication Date
DE69722696D1 true DE69722696D1 (de) 2003-07-17

Family

ID=13627976

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69722696T Expired - Lifetime DE69722696D1 (de) 1996-03-29 1997-03-27 Pegelumsetzer für hohe Spannung mit einem CMOS-Transistor mit dünner Gate-Isolationsschicht

Country Status (5)

Country Link
US (1) US5852366A (de)
EP (1) EP0798860B1 (de)
JP (1) JP2803624B2 (de)
KR (1) KR100233625B1 (de)
DE (1) DE69722696D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3389856B2 (ja) 1998-03-24 2003-03-24 日本電気株式会社 半導体装置
US6407579B1 (en) 2000-01-20 2002-06-18 Koninklijke Philips Electronics N.V. Fast high voltage level shifter with gate oxide protection
DE10063686A1 (de) 2000-12-20 2002-07-18 Infineon Technologies Ag Schaltungsanordnung zur Pegelerhöhung, insbesondere zum Ansteuern einer programmierbaren Verbindung
KR20060114008A (ko) * 2004-02-11 2006-11-03 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 고속 저전압 동작 고전압 구동기 회로
US7646233B2 (en) 2006-05-11 2010-01-12 Dsm Solutions, Inc. Level shifting circuit having junction field effect transistors
US20080024188A1 (en) * 2006-07-28 2008-01-31 Chou Richard K Junction field effect transistor level shifting circuit
JP4939895B2 (ja) * 2006-10-16 2012-05-30 フリースケール セミコンダクター インコーポレイテッド レベルシフタ回路
WO2009022275A1 (en) * 2007-08-13 2009-02-19 Nxp B.V. Level shifter circuit
US20100214001A1 (en) * 2009-02-26 2010-08-26 Himax Analogic, Inc. Level Shift Circuit
KR101387266B1 (ko) * 2012-09-05 2014-04-18 엘에스산전 주식회사 레벨 쉬프트 디바이스

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07105448B2 (ja) * 1988-03-14 1995-11-13 日本電気株式会社 Ｍｏｓ型集積回路
US5237193A (en) * 1988-06-24 1993-08-17 Siliconix Incorporated Lightly doped drain MOSFET with reduced on-resistance
JPH02186826A (ja) * 1989-01-13 1990-07-23 Matsushita Electric Ind Co Ltd レベルシフタ
JPH05308274A (ja) * 1992-04-30 1993-11-19 Matsushita Electric Ind Co Ltd Ｃｍｏｓレベルシフト回路

Also Published As

Publication number Publication date
KR100233625B1 (ko) 1999-12-01
EP0798860B1 (de) 2003-06-11
EP0798860A3 (de) 1999-05-06
JP2803624B2 (ja) 1998-09-24
US5852366A (en) 1998-12-22
KR970067337A (ko) 1997-10-13
EP0798860A2 (de) 1997-10-01
JPH09270699A (ja) 1997-10-14

Similar Documents

Publication Publication Date Title
DE69635824D1 (de) Graben-dmos-transistor mit vergrabener schicht für verminderten anschaltwiderstand und verbesserter robustheit
DE69430768D1 (de) Graben-DMOS transistor mit einem kurzen Kanal
DE69403251T2 (de) Halbleiterbauelement mit semi-isolierender Schicht für hohe Durchbruchspannungen
DE69404500T3 (de) Hochspannungs-MOS-Transistor mit ausgedehntem Drain
DE69534888D1 (de) Herstellungsverfahren für Halbleiterbauelement mit Graben
DE69614949D1 (de) Leistungs-Halbleiterbauteil mit isoliertem Graben-Gate
BR9702509A (pt) Estrutura elétrica com pelo menos uma camada isolante polimérica composição para isolante elétrico e método para reduzir a formação de "water-tree"
DE69737172D1 (de) Herstellungsverfahren für einen Feldeffekttransistor mit isoliertem Gate
DE19544980B4 (de) Lichtemittierendes Bauelement mit einem isolierenden Substrat und Herstellverfahren für dieses Bauelement
DE59711755D1 (de) IGBT mit Trench-Gate-Struktur
DE69511726T2 (de) Halbleiteranordnung mit isoliertem gate
DE69841541D1 (de) Grabengate-MOSFET mit bidirektionalem Spannungsclamping
DE69628928D1 (de) Streifenleitungs-richtkoppler mit toleranz für substratvariationen
DE69528944T2 (de) Halbleiteranordnung mit hoher Durchbruchspannung und mit einer vergrabenen MOS-Gatestruktur
DE19983773T1 (de) Transistor mit eingekerbtem Gate
DE19681771T1 (de) Umwandler mit piezokeramischem Wandler
DE69722696D1 (de) Pegelumsetzer für hohe Spannung mit einem CMOS-Transistor mit dünner Gate-Isolationsschicht
DE69432591D1 (de) Material für leiterplatte mit barriereschicht
DE69518178T2 (de) Dünnfilmtransistor mit einer Drainversatzzone
FR2758004B1 (fr) Transistor bipolaire a isolement dielectrique
DE69803163D1 (de) Hochspannungs-nmos-durchgangsgatter für flash-speicher mit hochspannungsgenerator
DE69613983T2 (de) Spannungsvergleicher mit mindestens einem Isolierschicht-MOS-Transistor und damit ausgerüstete Analog-Digital-Wandler
DE69619487D1 (de) Isolierschicht-Feldeffekttransistor mit einem diffundierten Kanal
DE69517268T2 (de) Selbstjustierende Flash-Speicherzelle mit begrabenem Kanalübergang und gestapeltem Gate
DE59404057D1 (de) Verlegefahrzeug für verlegbare Brücken

Legal Events

Date Code Title Description
8332 No legal effect for de