DE69706730D1 - Verfahren zur Herstellung eines Einkristalls aus Cerium enthaltenden magnetischen Granat - Google Patents

Verfahren zur Herstellung eines Einkristalls aus Cerium enthaltenden magnetischen Granat

Info

Publication number
DE69706730D1
DE69706730D1 DE69706730T DE69706730T DE69706730D1 DE 69706730 D1 DE69706730 D1 DE 69706730D1 DE 69706730 T DE69706730 T DE 69706730T DE 69706730 T DE69706730 T DE 69706730T DE 69706730 D1 DE69706730 D1 DE 69706730D1
Authority
DE
Germany
Prior art keywords
producing
single crystal
containing cerium
magnetic garnet
garnet containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69706730T
Other languages
English (en)
Other versions
DE69706730T2 (de
Inventor
Takashi Fujii
Takenori Sekijima
Kikuo Wakino
Masakatsu Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Application granted granted Critical
Publication of DE69706730D1 publication Critical patent/DE69706730D1/de
Publication of DE69706730T2 publication Critical patent/DE69706730T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
DE69706730T 1996-03-22 1997-03-21 Verfahren zur Herstellung eines Einkristalls aus Cerium enthaltenden magnetischen Granat Expired - Lifetime DE69706730T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9358196 1996-03-22
JP04729897A JP3772933B2 (ja) 1996-03-22 1997-02-14 ３価のセリウムを含む磁性ガーネット単結晶の製造方法

Publications (2)

Publication Number Publication Date
DE69706730D1 true DE69706730D1 (de) 2001-10-25
DE69706730T2 DE69706730T2 (de) 2002-05-29

Family

ID=26387466

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69706730T Expired - Lifetime DE69706730T2 (de) 1996-03-22 1997-03-21 Verfahren zur Herstellung eines Einkristalls aus Cerium enthaltenden magnetischen Granat

Country Status (5)

Country Link
US (2) US6033470A (de)
EP (1) EP0796931B1 (de)
JP (1) JP3772933B2 (de)
CN (1) CN1058760C (de)
DE (1) DE69706730T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3772933B2 (ja) * 1996-03-22 2006-05-10 株式会社村田製作所 ３価のセリウムを含む磁性ガーネット単結晶の製造方法
JPH11278980A (ja) * 1998-03-25 1999-10-12 Murata Mfg Co Ltd 単結晶育成方法
US6535656B1 (en) 2001-10-17 2003-03-18 Corning Incorporated Planar-type polarization independent optical isolator
US20030087728A1 (en) * 2001-11-06 2003-05-08 Sung-Yeng Chen Elastic spherical hand muscle developer
JP3642063B2 (ja) * 2002-08-22 2005-04-27 株式会社村田製作所 テルビウム・アルミニウム系常磁性ガーネット単結晶の製造方法
AU2003264458A1 (en) * 2002-09-27 2004-04-19 Murata Manufacturing Co., Ltd. Terbium paramagnetic garnet single crystal and magneto-optical device
JP3760234B2 (ja) * 2003-02-27 2006-03-29 独立行政法人産業技術総合研究所 双楕円柱面鏡を用いた対称ｘ型光学系
US8124254B2 (en) * 2006-12-19 2012-02-28 Boston Applied Technologies, Inc Heterostructure of ferromagnetic and ferroelectric materials with magneto-optic and electro-optic effects
CN102134749A (zh) * 2010-01-22 2011-07-27 中国科学院福建物质结构研究所 一种镝离子激活的钆镓石榴石新型激光晶体
CN102021647B (zh) * 2010-10-22 2012-05-30 北京工业大学 一种快速生长厘米量级红宝石晶体的方法
CN104011491B (zh) * 2011-12-02 2016-09-07 独立行政法人产业技术综合研究所 聚光镜加热炉
CN105347782B (zh) * 2015-11-24 2017-09-29 东阳富仕特磁业有限公司 一种高功率钇钆石榴石铁氧体
CN115386956B (zh) * 2021-05-24 2023-09-08 中国科学院上海硅酸盐研究所 一种移动熔剂浮区法生长钆镓石榴石晶体的方法
CN115491748A (zh) * 2022-11-01 2022-12-20 安徽科瑞思创晶体材料有限责任公司 一种铋掺钇铁石榴石及其晶体生长方法以及应用
CN116813319B (zh) * 2023-05-24 2024-08-23 西北工业大学 高温介电吸波陶瓷及高温介电吸波陶瓷的制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3496108A (en) * 1966-11-15 1970-02-17 Bell Telephone Labor Inc Hydrothermal growth of magnetic garnets and materials so produced
US4256531A (en) * 1977-08-09 1981-03-17 National Institute For Researches In Inorganic Materials Process for producing single crystal of yttrium-iron garnet or solid solution thereof
JPS6046080B2 (ja) * 1981-07-16 1985-10-14 富士電気化学株式会社 マイクロ波用ガリウム置換型ｙｉｇ単結晶の製造方法
JPS5969498A (ja) * 1982-10-13 1984-04-19 Natl Inst For Res In Inorg Mater マイクロ波用ｙｉｇ単結晶の製造方法
EP0211933A1 (de) * 1985-02-11 1987-03-04 Solavolt International Verfahren eines band-zu-band-umwandlungssystems und vorrichtung dafür
JPS6263596A (ja) * 1985-09-17 1987-03-20 Shin Etsu Chem Co Ltd シロキサンオリゴマ−
US5077271A (en) * 1988-12-02 1991-12-31 Hewlett-Packard Company Liquid phase epitaxial method for forming single crystal films of high temperature oxide superconductors
JP2728715B2 (ja) * 1989-02-08 1998-03-18 株式会社東芝 ガーネット系磁性体
JPH04338191A (ja) * 1991-05-14 1992-11-25 Nec Corp 単結晶の製造方法
EP0559412B1 (de) * 1992-03-02 1997-01-22 TDK Corporation Verfahren zur Herstellung eines dünnen Filmes durch epitaktisches Wachstum
US5770101A (en) * 1993-01-11 1998-06-23 Murata Manufacturing Co., Ltd. Magnetostatic-wave device
JP2774040B2 (ja) * 1993-03-11 1998-07-09 日本碍子株式会社 ガーネット単結晶膜
JPH06318517A (ja) * 1993-05-07 1994-11-15 Murata Mfg Co Ltd 静磁波素子用材料
JP3772933B2 (ja) * 1996-03-22 2006-05-10 株式会社村田製作所 ３価のセリウムを含む磁性ガーネット単結晶の製造方法

Also Published As

Publication number Publication date
US6033470A (en) 2000-03-07
EP0796931A1 (de) 1997-09-24
JPH09320848A (ja) 1997-12-12
CN1058760C (zh) 2000-11-22
DE69706730T2 (de) 2002-05-29
JP3772933B2 (ja) 2006-05-10
EP0796931B1 (de) 2001-09-19
CN1167842A (zh) 1997-12-17
US6063304A (en) 2000-05-16

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