DE69703611T2 - Ätzverfahren unter Verwendung eines fokussierten Ionenstrahls (FIB) mit 1,2-Dijodoäthan - Google Patents

Ätzverfahren unter Verwendung eines fokussierten Ionenstrahls (FIB) mit 1,2-Dijodoäthan

Info

Publication number
DE69703611T2
DE69703611T2 DE69703611T DE69703611T DE69703611T2 DE 69703611 T2 DE69703611 T2 DE 69703611T2 DE 69703611 T DE69703611 T DE 69703611T DE 69703611 T DE69703611 T DE 69703611T DE 69703611 T2 DE69703611 T2 DE 69703611T2
Authority
DE
Germany
Prior art keywords
diiodoethane
fib
etching process
ion beam
focused ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69703611T
Other languages
English (en)
Other versions
DE69703611D1 (de
Inventor
Michael A Cecere
Theodore Ralph Lundquist
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schlumberger Technologies Inc
Original Assignee
Schlumberger Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schlumberger Technologies Inc filed Critical Schlumberger Technologies Inc
Application granted granted Critical
Publication of DE69703611D1 publication Critical patent/DE69703611D1/de
Publication of DE69703611T2 publication Critical patent/DE69703611T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Sampling And Sample Adjustment (AREA)
DE69703611T 1996-12-20 1997-12-10 Ätzverfahren unter Verwendung eines fokussierten Ionenstrahls (FIB) mit 1,2-Dijodoäthan Expired - Fee Related DE69703611T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/771,804 US5840630A (en) 1996-12-20 1996-12-20 FBI etching enhanced with 1,2 di-iodo-ethane

Publications (2)

Publication Number Publication Date
DE69703611D1 DE69703611D1 (de) 2001-01-04
DE69703611T2 true DE69703611T2 (de) 2001-05-03

Family

ID=25093016

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69703611T Expired - Fee Related DE69703611T2 (de) 1996-12-20 1997-12-10 Ätzverfahren unter Verwendung eines fokussierten Ionenstrahls (FIB) mit 1,2-Dijodoäthan

Country Status (6)

Country Link
US (1) US5840630A (de)
EP (1) EP0855734B1 (de)
JP (1) JPH10204660A (de)
KR (1) KR100510431B1 (de)
DE (1) DE69703611T2 (de)
TW (1) TW375761B (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3117960B2 (ja) * 1997-12-11 2000-12-18 セイコーインスツルメンツ株式会社 集束イオンビーム加工方法及び装置
JP3494889B2 (ja) * 1998-06-03 2004-02-09 セイコーインスツルメンツ株式会社 集束イオンビーム加工装置
US6268608B1 (en) 1998-10-09 2001-07-31 Fei Company Method and apparatus for selective in-situ etching of inter dielectric layers
US6651313B1 (en) * 2000-10-06 2003-11-25 International Business Machines Corporation Method for manufacturing a magnetic head
US6730237B2 (en) * 2001-06-22 2004-05-04 International Business Machines Corporation Focused ion beam process for removal of copper
AU2002336400A1 (en) 2001-08-27 2003-03-10 Nptest, Inc. Process for charged particle beam micro-machining of copper
US6855622B2 (en) 2002-05-30 2005-02-15 Nptest, Llc Method and apparatus for forming a cavity in a semiconductor substrate using a charged particle beam
US6955930B2 (en) 2002-05-30 2005-10-18 Credence Systems Corporation Method for determining thickness of a semiconductor substrate at the floor of a trench
US7029595B1 (en) * 2002-08-21 2006-04-18 Advanced Micro Devices, Inc. Selective etch for uniform metal trace exposure and milling using focused ion beam system
US7060196B2 (en) * 2003-10-03 2006-06-13 Credence Systems Corporation FIB milling of copper over organic dielectrics
JP4359131B2 (ja) 2003-12-08 2009-11-04 株式会社日立ハイテクノロジーズ 液体金属イオン銃、及びイオンビーム装置
KR100590575B1 (ko) * 2004-12-24 2006-06-19 삼성전자주식회사 새로운 물질을 이용한 전자빔 리소그래피 방법
US8277672B2 (en) * 2009-04-17 2012-10-02 Tiza Lab, LLC Enhanced focused ion beam etching of dielectrics and silicon
EP3380061A4 (de) 2015-11-24 2019-07-24 Insulet Corporation Automatisiertes wearable-arzneimittelabgabesystem
CZ310048B6 (cs) * 2017-07-25 2024-06-19 Tescan Group, A.S. Způsob odstranění hmoty
US20220223431A1 (en) * 2020-12-28 2022-07-14 American Air Liquide, Inc. High conductive passivation layers and method of forming the same during high aspect ratio plasma etching

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4126523A (en) * 1976-10-21 1978-11-21 Alumatec, Inc. Method and means for electrolytic precleaning of substrates and the electrodeposition of aluminum on said substrates
US4226666A (en) * 1978-08-21 1980-10-07 International Business Machines Corporation Etching method employing radiation and noble gas halide
DE3785737T2 (de) * 1986-12-26 1993-09-02 Seiko Instr Inc Geraet zur ausbesserung eines gemusterten films.
US4874947A (en) * 1988-02-26 1989-10-17 Micrion Corporation Focused ion beam imaging and process control
DE3919568A1 (de) * 1989-06-15 1990-12-20 Dom Sicherheitstechnik Schloss mit vor- und rueckschliessbarem riegelelement
US5009743A (en) * 1989-11-06 1991-04-23 Gatan Incorporated Chemically-assisted ion beam milling system for the preparation of transmission electron microscope specimens
JPH088245B2 (ja) * 1990-09-28 1996-01-29 株式会社島津製作所 集束イオンビームエッチング装置
US5140164A (en) * 1991-01-14 1992-08-18 Schlumberger Technologies, Inc. Ic modification with focused ion beam system
WO1994013010A1 (en) * 1991-04-15 1994-06-09 Fei Company Process of shaping features of semiconductor devices
US5188705A (en) * 1991-04-15 1993-02-23 Fei Company Method of semiconductor device manufacture
DE4421517A1 (de) * 1993-06-28 1995-01-05 Schlumberger Technologies Inc Verfahren zum Abtrag oder Auftrag von Material mittels eines Partikelstrahls und Vorrichtung zu seiner Durchführung
US5580419A (en) * 1994-03-23 1996-12-03 Trw Inc. Process of making semiconductor device using focused ion beam for resistless in situ etching, deposition, and nucleation

Also Published As

Publication number Publication date
KR19980064271A (ko) 1998-10-07
KR100510431B1 (ko) 2005-11-11
EP0855734B1 (de) 2000-11-29
EP0855734A1 (de) 1998-07-29
TW375761B (en) 1999-12-01
DE69703611D1 (de) 2001-01-04
JPH10204660A (ja) 1998-08-04
US5840630A (en) 1998-11-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee