DE69702452D1 - Verfahren zum behandeln eines scheibens mit einem plasmastrahl - Google Patents

Verfahren zum behandeln eines scheibens mit einem plasmastrahl

Info

Publication number
DE69702452D1
DE69702452D1 DE69702452T DE69702452T DE69702452D1 DE 69702452 D1 DE69702452 D1 DE 69702452D1 DE 69702452 T DE69702452 T DE 69702452T DE 69702452 T DE69702452 T DE 69702452T DE 69702452 D1 DE69702452 D1 DE 69702452D1
Authority
DE
Germany
Prior art keywords
treating
disk
plasma jet
jet
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69702452T
Other languages
English (en)
Other versions
DE69702452T2 (de
Inventor
Oleg Siniaguine
Iskander Tokmouline
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ipec Precision Inc
Original Assignee
Ipec Precision Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ipec Precision Inc filed Critical Ipec Precision Inc
Publication of DE69702452D1 publication Critical patent/DE69702452D1/de
Application granted granted Critical
Publication of DE69702452T2 publication Critical patent/DE69702452T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H01J37/32376—Scanning across large workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
DE69702452T 1996-05-31 1997-05-28 Verfahren zum behandeln eines scheibens mit einem plasmastrahl Expired - Fee Related DE69702452T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1885696P 1996-05-31 1996-05-31
PCT/US1997/009069 WO1997045856A1 (en) 1996-05-31 1997-05-28 Method for treating articles with a plasma jet

Publications (2)

Publication Number Publication Date
DE69702452D1 true DE69702452D1 (de) 2000-08-10
DE69702452T2 DE69702452T2 (de) 2000-11-23

Family

ID=21790104

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69702452T Expired - Fee Related DE69702452T2 (de) 1996-05-31 1997-05-28 Verfahren zum behandeln eines scheibens mit einem plasmastrahl

Country Status (6)

Country Link
US (1) US6238587B1 (de)
EP (1) EP0902961B1 (de)
JP (1) JP2000511356A (de)
KR (1) KR20000016136A (de)
DE (1) DE69702452T2 (de)
WO (1) WO1997045856A1 (de)

Families Citing this family (34)

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KR100377033B1 (ko) 1996-10-29 2003-03-26 트러시 테크날러지스 엘엘시 Ｉｃ 및 그 제조방법
US6882030B2 (en) 1996-10-29 2005-04-19 Tru-Si Technologies, Inc. Integrated circuit structures with a conductor formed in a through hole in a semiconductor substrate and protruding from a surface of the substrate
US6498074B2 (en) 1996-10-29 2002-12-24 Tru-Si Technologies, Inc. Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners
US6139678A (en) 1997-11-20 2000-10-31 Trusi Technologies, Llc Plasma processing methods and apparatus
US6406759B1 (en) * 1998-01-08 2002-06-18 The University Of Tennessee Research Corporation Remote exposure of workpieces using a recirculated plasma
US6168697B1 (en) 1998-03-10 2001-01-02 Trusi Technologies Llc Holders suitable to hold articles during processing and article processing methods
US6660643B1 (en) * 1999-03-03 2003-12-09 Rwe Schott Solar, Inc. Etching of semiconductor wafer edges
US6287976B1 (en) 1999-05-19 2001-09-11 Tru-Si Technologies, Inc. Plasma processing methods and apparatus
DE19925790A1 (de) * 1999-06-05 2000-12-07 Inst Oberflaechenmodifizierung Verfahren und Vorrichtung zur Bearbeitung von optischen und anderen Oberflächen mittels Hochrate-Plasmaprozessen
EP1246710A4 (de) * 1999-09-28 2007-07-04 Jetek Inc Verfahren und vorrichtung unter atmosphärischen bedingungen zum schnellen und kotrolierten entfernen von polymeren aus durch grosse tiefen-weiten-verhältnisszahlen gekennzeichneten löchern
US6467297B1 (en) 2000-10-12 2002-10-22 Jetek, Inc. Wafer holder for rotating and translating wafers
US7365019B2 (en) 1999-11-01 2008-04-29 Jetek, Llc Atmospheric process and system for controlled and rapid removal of polymers from high aspect ratio holes
US6322903B1 (en) 1999-12-06 2001-11-27 Tru-Si Technologies, Inc. Package of integrated circuits and vertical integration
US6825101B1 (en) * 2000-03-27 2004-11-30 Ultratech, Inc. Methods for annealing a substrate and article produced by such methods
KR20010105640A (ko) * 2000-05-17 2001-11-29 구자홍 평면 브라운관의 새도우 마스크 고정 레일
US6749764B1 (en) 2000-11-14 2004-06-15 Tru-Si Technologies, Inc. Plasma processing comprising three rotational motions of an article being processed
US7591957B2 (en) * 2001-01-30 2009-09-22 Rapt Industries, Inc. Method for atmospheric pressure reactive atom plasma processing for surface modification
US6717254B2 (en) 2001-02-22 2004-04-06 Tru-Si Technologies, Inc. Devices having substrates with opening passing through the substrates and conductors in the openings, and methods of manufacture
US6699356B2 (en) * 2001-08-17 2004-03-02 Applied Materials, Inc. Method and apparatus for chemical-mechanical jet etching of semiconductor structures
US6660177B2 (en) * 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
EP1485861A4 (de) 2002-03-20 2005-10-26 Symbol Technologies Inc Bilderfassungssystem und verfahren mit einem gemeinsamen abbildungs-array
US6848177B2 (en) 2002-03-28 2005-02-01 Intel Corporation Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme
JP3814558B2 (ja) * 2002-04-22 2006-08-30 スピードファム株式会社 局所ドライエッチング方法及び半導体ウェハ表面の位置−厚さデータの処理方法
US20080011332A1 (en) * 2002-04-26 2008-01-17 Accretech Usa, Inc. Method and apparatus for cleaning a wafer substrate
US20080017316A1 (en) * 2002-04-26 2008-01-24 Accretech Usa, Inc. Clean ignition system for wafer substrate processing
US20080190558A1 (en) * 2002-04-26 2008-08-14 Accretech Usa, Inc. Wafer processing apparatus and method
US7371992B2 (en) 2003-03-07 2008-05-13 Rapt Industries, Inc. Method for non-contact cleaning of a surface
AT412719B (de) * 2003-06-16 2005-06-27 Eckelt Glas Gmbh Verfahren und vorrichtung zum bereichsweisen entschichten von glasscheiben
US7297892B2 (en) * 2003-08-14 2007-11-20 Rapt Industries, Inc. Systems and methods for laser-assisted plasma processing
US7304263B2 (en) * 2003-08-14 2007-12-04 Rapt Industries, Inc. Systems and methods utilizing an aperture with a reactive atom plasma torch
NL1030896C2 (nl) * 2006-01-11 2007-07-12 Otb Group Bv Werkwijze en inrichting voor het gecontroleerd deponeren van materiaal door middel van plasma op een driedimensionaal substraat.
US20140134849A1 (en) * 2012-11-09 2014-05-15 Intermolecular Inc. Combinatorial Site Isolated Plasma Assisted Deposition
US10948825B2 (en) 2015-12-23 2021-03-16 Asml Netherlands B.V. Method for removing photosensitive material on a substrate
CN113002172B (zh) * 2021-02-25 2022-08-30 江西省中子能源有限公司 一种锂电池成品壳体喷码烘干系统

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5356672A (en) * 1990-05-09 1994-10-18 Jet Process Corporation Method for microwave plasma assisted supersonic gas jet deposition of thin films
GB2271044B (en) 1990-12-26 1995-06-21 Opa Apparatus for plasma-arc machining
GB2271124B (en) 1990-12-26 1995-09-27 Opa Method and apparatus for plasma treatment of a material
RU2030811C1 (ru) 1991-05-24 1995-03-10 Инженерный центр "Плазмодинамика" Установка для плазменной обработки твердого тела
JPH0570290A (ja) 1991-09-11 1993-03-23 Hitachi Chem Co Ltd ダイヤモンドの気相合成方法及びその装置
RU2000811C1 (ru) 1991-10-15 1993-10-15 Инженерный центр "Плазмодинамика" Способ стерилизации и дезинфекции медицинского оборудовани
DE69216637T2 (de) 1991-11-01 1997-04-24 Opa Overseas Publishers Ass Am Verfahren zur oberflächenbehandlung eines werkstückes
DE4138541A1 (de) 1991-11-23 1993-05-27 Philips Patentverwaltung Cvd-verfahren zur beschichtung ausgedehnter substrate
JP2947036B2 (ja) 1993-12-17 1999-09-13 株式会社デンソー 気相成長ダイヤモンドの製造装置

Also Published As

Publication number Publication date
US6238587B1 (en) 2001-05-29
JP2000511356A (ja) 2000-08-29
DE69702452T2 (de) 2000-11-23
EP0902961A1 (de) 1999-03-24
WO1997045856A1 (en) 1997-12-04
KR20000016136A (ko) 2000-03-25
EP0902961B1 (de) 2000-07-05

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee