DE69702272T2 - Verfahren zum Belichten der Randbereiche eines Halbleiterwafers, und Gerät zur Ausführung des Verfahrens - Google Patents

Verfahren zum Belichten der Randbereiche eines Halbleiterwafers, und Gerät zur Ausführung des Verfahrens

Info

Publication number
DE69702272T2
DE69702272T2 DE69702272T DE69702272T DE69702272T2 DE 69702272 T2 DE69702272 T2 DE 69702272T2 DE 69702272 T DE69702272 T DE 69702272T DE 69702272 T DE69702272 T DE 69702272T DE 69702272 T2 DE69702272 T2 DE 69702272T2
Authority
DE
Germany
Prior art keywords
exposing
carrying
semiconductor wafer
edge areas
areas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69702272T
Other languages
English (en)
Other versions
DE69702272D1 (de
Inventor
Isamu Shibuya
Takeshi Minobe
Yoshiki Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Ushio Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Publication of DE69702272D1 publication Critical patent/DE69702272D1/de
Application granted granted Critical
Publication of DE69702272T2 publication Critical patent/DE69702272T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE69702272T 1996-02-05 1997-02-04 Verfahren zum Belichten der Randbereiche eines Halbleiterwafers, und Gerät zur Ausführung des Verfahrens Expired - Lifetime DE69702272T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1862596 1996-02-05
JP16144396A JP3237522B2 (ja) 1996-02-05 1996-06-21 ウエハ周辺露光方法および装置

Publications (2)

Publication Number Publication Date
DE69702272D1 DE69702272D1 (de) 2000-07-20
DE69702272T2 true DE69702272T2 (de) 2000-12-21

Family

ID=26355329

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69702272T Expired - Lifetime DE69702272T2 (de) 1996-02-05 1997-02-04 Verfahren zum Belichten der Randbereiche eines Halbleiterwafers, und Gerät zur Ausführung des Verfahrens

Country Status (6)

Country Link
US (1) US5929976A (de)
EP (1) EP0788032B1 (de)
JP (1) JP3237522B2 (de)
KR (1) KR100434826B1 (de)
DE (1) DE69702272T2 (de)
TW (1) TW326552B (de)

Families Citing this family (42)

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EP0951054B1 (de) 1996-11-28 2008-08-13 Nikon Corporation Ausrichtvorrichtung und belichtungsverfahren
JPH10209039A (ja) 1997-01-27 1998-08-07 Nikon Corp 投影露光方法及び投影露光装置
KR19990031795A (ko) * 1997-10-14 1999-05-06 윤종용 노광장치 및 이를 이용한 노광방법
JP3356047B2 (ja) * 1997-11-26 2002-12-09 ウシオ電機株式会社 ウエハ周辺露光装置
WO2001082001A1 (en) * 2000-04-26 2001-11-01 Advanced Micro Devices, Inc. Lithography system with device for exposing the periphery of a wafer
TW527526B (en) 2000-08-24 2003-04-11 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
US7561270B2 (en) 2000-08-24 2009-07-14 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7289212B2 (en) * 2000-08-24 2007-10-30 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufacturing thereby
US6509577B1 (en) * 2000-11-10 2003-01-21 Asml Us, Inc. Systems and methods for exposing substrate periphery
KR100724623B1 (ko) * 2000-12-22 2007-06-04 주식회사 하이닉스반도체 노광장비내에서의 웨이퍼엣지 노광방법
US6495312B1 (en) * 2001-02-01 2002-12-17 Lsi Logic Corporation Method and apparatus for removing photoresist edge beads from thin film substrates
KR100512006B1 (ko) 2001-03-06 2005-09-02 삼성전자주식회사 웨이퍼 주연 부위의 노광 방법 및 이를 수행하기 위한 장치
EP1256848A3 (de) * 2001-05-08 2003-01-02 ASML Netherlands B.V. Optisches Belichtungsverfahren und lithographischer Projektionsapparat
US6618118B2 (en) 2001-05-08 2003-09-09 Asml Netherlands B.V. Optical exposure method, device manufacturing method and lithographic projection apparatus
JP4019651B2 (ja) * 2001-05-21 2007-12-12 ウシオ電機株式会社 周辺露光装置
JP3820946B2 (ja) * 2001-09-17 2006-09-13 ウシオ電機株式会社 周辺露光装置
WO2003032081A1 (en) * 2001-10-09 2003-04-17 Ultratech Stepper, Inc. Method and apparatus for optically defining an exposure exclusion region on a photosensitive workpiece
JP3823805B2 (ja) * 2001-10-30 2006-09-20 ウシオ電機株式会社 露光装置
JP4258828B2 (ja) * 2002-06-06 2009-04-30 株式会社安川電機 ウエハプリアライメント装置および方法
JP4302373B2 (ja) * 2002-07-25 2009-07-22 浜松ホトニクス株式会社 導光装置
KR100478730B1 (ko) * 2002-07-30 2005-03-24 주식회사 제일 기판 주변 노광 장치
JP2004200495A (ja) * 2002-12-19 2004-07-15 Dainippon Screen Mfg Co Ltd 反射防止膜改質装置および反射防止膜改質方法
AU2004247737B2 (en) * 2003-06-11 2009-04-23 Wyeth Platelet glycoprotein IB alpha variant fusion polypeptides and methods of use thereof
JP4083100B2 (ja) * 2003-09-22 2008-04-30 株式会社Ｓｏｋｕｄｏ 周縁部露光装置
KR100550352B1 (ko) * 2004-07-02 2006-02-08 삼성전자주식회사 반도체 기판의 노광방법 및 이를 이용하는 노광 장치
KR100585170B1 (ko) * 2004-12-27 2006-06-02 삼성전자주식회사 트윈 기판 스테이지를 구비한 스캐너 장치, 이를 포함하는반도체 사진 설비 및 상기 설비를 이용한 반도체 소자의제조방법
JP4642543B2 (ja) * 2005-05-09 2011-03-02 東京エレクトロン株式会社 周縁露光装置、塗布、現像装置及び周縁露光方法
US7342642B2 (en) * 2005-06-20 2008-03-11 Asml Netherlands B.V. Pre-aligning a substrate in a lithographic apparatus, device manufacturing method, and device manufactured by the manufacturing method
KR100733137B1 (ko) * 2006-06-14 2007-06-28 삼성전자주식회사 웨이퍼 에지 노광 장치
TW200916696A (en) * 2007-10-11 2009-04-16 Hannspree Inc Flat-panel display with illumination function
TWI454851B (zh) * 2007-12-28 2014-10-01 尼康股份有限公司 An exposure apparatus, a moving body driving system, a pattern forming apparatus, and an exposure method, and an element manufacturing method
CN103034062B (zh) * 2011-09-29 2014-11-26 中芯国际集成电路制造(北京)有限公司 用于晶片边缘曝光的方法、光学模块和自动聚焦系统
US9891529B2 (en) * 2014-03-28 2018-02-13 Taiwan Semiconductor Manufacturing Co., Ltd Light transmission device and method for semiconductor manufacturing process
US9841299B2 (en) * 2014-11-28 2017-12-12 Canon Kabushiki Kaisha Position determining device, position determining method, lithographic apparatus, and method for manufacturing object
JP6308958B2 (ja) * 2015-02-25 2018-04-11 東京エレクトロン株式会社 基板処理装置、基板処理方法、プログラム及びコンピュータ記憶媒体
JP7124277B2 (ja) * 2016-12-13 2022-08-24 東京エレクトロン株式会社 光処理装置及び基板処理装置
US10747121B2 (en) * 2016-12-13 2020-08-18 Tokyo Electron Limited Optical processing apparatus and substrate processing apparatus
JP7469924B2 (ja) * 2020-03-18 2024-04-17 キヤノン株式会社 インプリント装置及び物品の製造方法
US11402761B2 (en) * 2020-05-22 2022-08-02 Taiwan Semiconductor Manufacturing Company Limited Semiconductor lithography system and/or method
TWI792281B (zh) * 2020-05-22 2023-02-11 台灣積體電路製造股份有限公司 半導體光刻技術及/或方法
US11378888B1 (en) * 2021-01-07 2022-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Lens adjustment for an edge exposure tool
CN112965343A (zh) * 2021-02-08 2021-06-15 上海度宁科技有限公司 工件台结构及包含该结构的光刻系统及其曝光方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0795516B2 (ja) 1988-01-29 1995-10-11 ウシオ電機株式会社 ウエハ周辺露光方法及び装置
US4899195A (en) 1988-01-29 1990-02-06 Ushio Denki Method of exposing a peripheral part of wafer
JPH0750680B2 (ja) * 1988-12-28 1995-05-31 ウシオ電機株式会社 ウエハ周辺露光装置
US5289263A (en) * 1989-04-28 1994-02-22 Dainippon Screen Mfg. Co., Ltd. Apparatus for exposing periphery of an object
US5168021A (en) * 1989-09-21 1992-12-01 Ushio Denki Method for exposing predetermined area of peripheral part of wafer
US5249016A (en) * 1989-12-15 1993-09-28 Canon Kabushiki Kaisha Semiconductor device manufacturing system
US5229811A (en) * 1990-06-15 1993-07-20 Nikon Corporation Apparatus for exposing peripheral portion of substrate
JP2862385B2 (ja) * 1991-03-13 1999-03-03 キヤノン株式会社 露光装置
JP2593831B2 (ja) 1991-03-20 1997-03-26 ウシオ電機株式会社 ウエハ上の不要レジスト露光装置および露光方法
JPH0775220B2 (ja) * 1991-03-20 1995-08-09 ウシオ電機株式会社 ウエハ上の不要レジスト露光方法
JPH04293224A (ja) * 1991-03-22 1992-10-16 Tokyo Electron Ltd 露光装置
US5420663A (en) * 1993-03-19 1995-05-30 Nikon Corporation Apparatus for exposing peripheral portion of substrate

Also Published As

Publication number Publication date
KR100434826B1 (ko) 2004-09-13
EP0788032A1 (de) 1997-08-06
DE69702272D1 (de) 2000-07-20
KR970063424A (ko) 1997-09-12
EP0788032B1 (de) 2000-06-14
US5929976A (en) 1999-07-27
TW326552B (en) 1998-02-11
JPH09275073A (ja) 1997-10-21
JP3237522B2 (ja) 2001-12-10

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Legal Events

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