DE69700965T2 - Pegelumsetzungsschaltung mit MOSFET-Transistoren verwendender Differenzschaltung - Google Patents

Pegelumsetzungsschaltung mit MOSFET-Transistoren verwendender Differenzschaltung

Info

Publication number
DE69700965T2
DE69700965T2 DE69700965T DE69700965T DE69700965T2 DE 69700965 T2 DE69700965 T2 DE 69700965T2 DE 69700965 T DE69700965 T DE 69700965T DE 69700965 T DE69700965 T DE 69700965T DE 69700965 T2 DE69700965 T2 DE 69700965T2
Authority
DE
Germany
Prior art keywords
circuit
level conversion
mosfet transistors
conversion circuit
differential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69700965T
Other languages
English (en)
Other versions
DE69700965D1 (de
Inventor
Hiroshi Kanno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69700965D1 publication Critical patent/DE69700965D1/de
Application granted granted Critical
Publication of DE69700965T2 publication Critical patent/DE69700965T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/017509Interface arrangements
    • H03K19/017518Interface arrangements using a combination of bipolar and field effect transistors [BIFET]
    • H03K19/017527Interface arrangements using a combination of bipolar and field effect transistors [BIFET] with at least one differential stage
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Amplifiers (AREA)
  • Manipulation Of Pulses (AREA)
DE69700965T 1996-01-17 1997-01-16 Pegelumsetzungsschaltung mit MOSFET-Transistoren verwendender Differenzschaltung Expired - Fee Related DE69700965T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8005905A JPH09200004A (ja) 1996-01-17 1996-01-17 レベル変換回路

Publications (2)

Publication Number Publication Date
DE69700965D1 DE69700965D1 (de) 2000-01-27
DE69700965T2 true DE69700965T2 (de) 2000-07-27

Family

ID=11623923

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69700965T Expired - Fee Related DE69700965T2 (de) 1996-01-17 1997-01-16 Pegelumsetzungsschaltung mit MOSFET-Transistoren verwendender Differenzschaltung

Country Status (5)

Country Link
US (1) US6340911B1 (de)
EP (1) EP0785629B1 (de)
JP (1) JPH09200004A (de)
KR (1) KR100236255B1 (de)
DE (1) DE69700965T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19930178C1 (de) * 1999-06-30 2001-01-11 Siemens Ag ECL/CMOS-Pegelwandler
DE102004060212A1 (de) * 2004-12-14 2006-07-06 Infineon Technologies Ag Pegelumsetzer
US9379709B2 (en) 2014-06-30 2016-06-28 Finisar Corporation Signal conversion
CN107086861B (zh) * 2017-05-25 2023-11-10 北京航天动力研究所 一种电平转换双态输出驱动电路
CN111191474B (zh) * 2019-12-30 2023-04-25 成都达安众科技有限公司 一种rfid抗干扰解调器
CN113595546B (zh) * 2021-07-01 2022-05-17 深圳市汇芯通信技术有限公司 宽带高速电平转换电路及高速时钟芯片
CN114400975B (zh) * 2021-12-15 2022-09-27 陕西亚成微电子股份有限公司 一种基于包络追踪技术的功率放大电路及设计方法
CN116827320B (zh) * 2023-07-27 2024-01-26 江苏润石科技有限公司 一种快速响应的自适应电源转换电路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07118642B2 (ja) * 1986-01-08 1995-12-18 株式会社東芝 レベル変換回路
DE4000780C1 (de) * 1990-01-12 1991-07-25 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
JPH04278719A (ja) * 1991-03-06 1992-10-05 Toshiba Corp ソース電極結合形論理回路
JPH05160709A (ja) 1991-12-04 1993-06-25 Hitachi Ltd 高速論理入力回路
EP0590818A3 (en) * 1992-10-02 1994-05-11 Nat Semiconductor Corp Ecl-to-bicmos/cmos translator
US5332935A (en) 1993-04-12 1994-07-26 Sierra Semiconductor ECL and TTL to CMOS logic converter
US5434516A (en) 1993-07-09 1995-07-18 Future Domain Corporation Automatic SCSI termination circuit

Also Published As

Publication number Publication date
KR100236255B1 (ko) 1999-12-15
KR970060698A (ko) 1997-08-12
DE69700965D1 (de) 2000-01-27
US6340911B1 (en) 2002-01-22
JPH09200004A (ja) 1997-07-31
EP0785629A1 (de) 1997-07-23
EP0785629B1 (de) 1999-12-22

Similar Documents

Publication Publication Date Title
DE59707209D1 (de) Stromrichterschaltung
DE69737876D1 (de) Fotosensorschaltung
DE69534584D1 (de) Halbleiter-Bauteil mit Gräben
DE69712138D1 (de) Integrierte Schaltung mit Feldeffekttransistoren
DE69730649D1 (de) Differentielle Ausgangstreiberschaltung mit gemeinsamen Bezugspunkt
DE69428407D1 (de) Rauscharmer bipolarer Transistor
DE69410067D1 (de) Transistorschaltung
DE69724399D1 (de) Logische MOS-Schaltung
DE68903243T2 (de) Spannungs-stromumsetzer mit mos-transistoren.
DE69930135D1 (de) Pseudomorphe transistoren mit hoher elektronenbeweglichkeit
DE29610649U1 (de) Computer - Hauptleiterplatinen - Gestellkonstruktion
DE59909275D1 (de) Schaltungsanordnung mit Strom-Digital-Analog-Konvertern
DE69624016D1 (de) CMOS-PECL-Pegelumsetzungsschaltung
DE69310162D1 (de) Pegelumsetzungsschaltung
DE69934937D1 (de) Integrierte Schaltung mit Ausgangstreiber
DE69512101D1 (de) Leistungs-Bipolartransistor
DE69700965D1 (de) Pegelumsetzungsschaltung mit MOSFET-Transistoren verwendender Differenzschaltung
DE69713480D1 (de) Schaltungsanordnung
DE69532071D1 (de) Aufwärtswandlerschaltung
DE69709604D1 (de) Schaltungsanordnung
DE69724575D1 (de) Integrierte Schaltung
DE69629456D1 (de) Feldeffekttransistor mit verminderter Verzögerungsänderung
DE69841667D1 (de) Halbleiteranordnungen mit MOS-Gatter
DE69525707T2 (de) MOS-Inverter-Schaltung
DE59501624D1 (de) MOS-Treiberschaltung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee